Datasheet text preview:
IRF240
MECHANICAL DATA Dimensions in mm (inches)
40.01 (1.575) Max.
26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls.
NCHANNEL POWER MOSFET FOR HIREL APPLICATIONS
VDSS ID(cont) RDS(on) 200V 18A 0.18
22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 30.40 (1.197) 29.90 (1.177) 12.19 (0.48) 11.18 (0.44)
1.63 (0.064) 1.52 (0.060)
2
11.18 (0.440) 10.67 (0.420)
4.09 (0.161) 3.84 (0.151) 2 Pls
1
FEATURES
· HERMETICALLY SEALED TO3 METAL PACKAGE
16.97 (0.668) 16.87 (0.664)
· SIMPLE DRIVE REQUIREMENTS · SCREENING OPTIONS AVAILABLE
TO3 METAL PACKAGE (TO204AA)
Underside View Pin 1 = Gate Pin 2 = Source Case = Drain
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS ID ID IDM PD TJ , Tstg RJC RJA Gate Source Voltage Continuous Drain Current @ Tcase = 25°C Continuous Drain Current @ Tcase = 100°C Pulsed Drain Current Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient ±20V 18A 11A 72A 125W 1.0W/°C 55 to 150°C 1.0°C/W max. 30°C/W max.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3332 Issue 1
IRF240
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
STATIC ELECTRICAL RATINGS BVDSS Drain Source Breakdown Voltage BVDSS Temperature Coefficient of TJ RDS(on) Breakdown Voltage Static Drain Source OnState Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate Source Leakage Reverse Gate Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain ("Miller") Charge TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time VDD = 100V ID = 18A RG = 9.1
Test Conditions
VGS = 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS VDS 15V VGS = 0 VGS = 20V VGS = 20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDSS ID = 18A ID = 11A* ID = 18A* ID = 250µA IDS = 11A* VDS = 0.8BVDSS TJ = 125°C ID = 1mA
Min.
200
Typ.
Max.
Unit
V
Reference to 25°C
0.29 0.18 0.21 2 6.1 25 250 100 -100 1300 400 130 32 2.2 14 60 10.6 38 20 152 58 67 18 72 4
V / °C V S( µA nA )(
VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr LD LS
pF
nC
ns
SOURCE DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge PACKAGE CHARACTERISTICS Internal Drain Inductance Internal Source Inductance IS = 18A VGS = 0 IS = 18A TJ = 25°C di / dt 100A/µs VDD 50V
(from 6mm down drain lead pad to centre of die)
A V ns µC
TJ = 25°C
1.5 500 5.3 5.0 13
nH
(from 6mm down source lead to centre of source bond pad)
* Pulse width 300µs; Duty Cycle 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3332 Issue 1
