|
|
Part: IRF230
Category:
Description:
Company: Semelab Plc
Datasheet: Download IRF230 datasheet File size : 170 kB
Request For quote: Find where to buy IRF230
Datasheet text preview:
IRF230
TO3 (TO204AA) Package Outline.
Dimensions in mm (inches)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
NCHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET
2 2 .2 3 (0 . 8 7 5 ) max.
3 8 . 6 1 (1.52) 3 9 . 1 2 (1.54)
2 9 . 9 (1.177) 3 0 . 4 (1.197)
1 6 . 6 4 (0.655) 1 7 . 1 5 (0.675)
1
2
3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50)
Pin 1 Gate
Pin 2 Source
0 . 9 7 (0.060) 1 . 1 0 (0.043)
Case Drain
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDS VDGR ID ID IDM VGS PD ILM EAS* TJ , TSTG TL Drain Source Voltage1 Drain - Gate Voltage (RGS = 20KW)1 Continuous Drain Current@ Tcase = 25°C Continuous Drain Current@ Tcase = 100°C Pulsed Drain Current 3 Gate Source Voltage Maximum Power Dissipation @ Tcase = 25°C Derate Linearly Inductive Current Clamped Single Pulse Avalanche energy Rating 4 Operating and Storage Junction Temperature Range Lead Temperature : 0.063 " from Case for 10 Sec. 200 200 9.0 6.0 36 ±20 75 0.6 36 150 55 to 150 300 V V A A A V W W/°C A mj °C °C
THERMAL CHARACTERISTICS
Characteristic RqJC RqCS RqJA NOTES 1 TJ = +25°C to + 150°C 2 Pulse Test PUlse Width # 300ms. Duty Cycle # 2% 3 Repetitive Ration Pulse Width Limited by Maximum Junction Temperature. 4 VDD = 20V starting TJ = +25°C , L = 3.37mH, RGS = 50W, IPEAK = 9A Junction to Case Case to Sink (Mounting Surface flat, smooth and greased. Junction to Ambient (Free air operation) 0.1 30 Min. Typ. Max. Unit 1.67 °C/W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 6/00
IRF230
ELECTRICAL (Tcase = 25°C unless otherwise stated)
Parameter
STATIC ELECTRICAL RATINGS BVDSS DrainSource Breakdown Voltage VGS(TH) Gate Threshold Voltage IGSS IGSS IDSS Gate Source Leakage forward Gate Source Leakage Reverse Zero Gate Voltage Drain Current VGS = 0V , ID = 250mA VDS = VGS , ID = 250mA VGS = 20V VGS = -20V VDS = Max rating VGS=0V ID(ON)2 On-State Drain Current VGS=0V VDS = Max rating x0.8, TJ = +125°C 9 0.25 3.0 4.8 600 250 80 ID = 9A 19 10 9.0 35 VDD·100V, RG = 7.5W ID = 5.0A, 80 60 40 ns 30 nC pF 0.4 VDS> ID(ON) xrDS(ON) Max. VGS = 10V IDS = 5.0A ID =5.0A 200 2 4 100 -100 250 1000
mA
Test Conditions
Min.
Typ.
Max.
Unit
V V nA
A
W
rDS(ON)2 Static DrainSource On State Resistance VGS = 10V , Forward Transconductance gts2 VDS> 50V DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd td(ON) tr td(OFF) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain ("Miller") Charge TurnOn Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE DRAIN DIODE CHARACTERISTICS IS ISM VSD trr Qrr tON LD LS VGS = 0V, f = 1MHz VGS = 10V VDS = 0.8 VMax
S(W)
VDS = 25V
Continuous Source Current (Body Diode) Modified MOSFET symbol showing the integral Pulsed Source Current1 (Body Diode) Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge Forward Turn-on Time PACKAGE CHARACTERISTICS Internal Drain Inductance Internal Source Inductance (from 6mm down source lead to source bond pad)
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
9.0 A 36 2.0 450 3.0 NEGLIGIBLE 5.0 12.5 V ns
mC
reverse P-N junc. rectifier. TJ = +25°C , VGS = 0V TJ = +150°C , TJ = +150°C , IS = 9A IS = 9A VGS = 0V dlF/dt = 100A/ms VGS = 0V dlF/dt = 100A/ms IS = 9A
nH
Semelab plc.
Prelim. 6/00
Others parts begin by ir
IR-1 IR-2 IR-3 IR-4 IR-5 IR-6 IR-7 IR-8 IR-9 IR-10 IR-11 IR-12 IR-13 IR-14 IR-15 IR-16 IR-17 IR-18 IR-19 IR-20 IR-21 IR-22 IR-23 IR-24 IR-25 IR-26 IR-27 IR-28 IR-29 IR-30 IR-31
|
|
|
