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Part: M368L3313BT1-CA2
Category:
Memory
-> DRAM
-> DDR SDRAM
-> Modules
-> Unbuffered DIMM
Description: Description = M368L3313BT1 32Mx64 DDR Sdram 184pin Dimm Based on 16Mx8 ;; Density(MB) = 256 ;; Organization = 32Mx64 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 4K/64ms ;; Speed = A2,B0,A0 ;; #of Pin = 184 ;; Power = C,l ;; Component Composition = (16Mx8)x16 ;; Production Status = Eol ;; Comments = -
Company: Samsung Semiconductor, Inc.
Datasheet: Download M368L3313BT1-CA2 datasheet File size : 224 kB
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Datasheet text preview:
M368L3313BT1
184pin Unbuffered DDR SDRAM MODULE
128MB DDR SDRAM MODULE
(32Mx64(16Mx64*2 bank) based on 16Mx8 DDR SDRAM)
Unbuffered 184pin DIMM 64-bit Non-ECC/Parity
Revision 0.9 June. 2001
Rev. 0.9 June. 2001
M368L3313BT1
Revision History
Revision 0 (Aug 1998)
1. First release for internal usage
184pin Unbuffered DDR SDRAM MODULE
Revision 0.1 (May. 1999)
1. Changed die revision from B-die to C-die 2. Changed DC/AC characteristics item from old version.
Revision 0.2 (Aug. 1999)
1. Changed die revision from C-die to B-die 2. Modified binning policy From To -Z (133Mhz) -Z (133Mhz/266Mbps@CL=2) -8 (125Mhz) -Y (133Mhz/266Mbps@CL=2.5) -0 (100Mhz) -0 (100Mhz/200Mbps@CL=2) 3.Modified the following AC spec values From. -Z tAC tDQSCK tDQSQ tDS/tDH tCDLR tPRE
*1 *1
To. -0 +/- 1ns +/- 1ns +/- 0.75ns 0.75 ns -Z +/- 0.75ns +/- 0.75ns +/- 0.5ns 0.5 ns 1tCK 0.9/1.1 tCK 0.4/0.6 tCK +/- 0.75ns -Y +/- 0.75ns +/- 0.75ns +/- 0.5ns 0.5 ns 1tCK 0.9/1.1 tCK 0.4/0.6 tCK +/- 0.75ns -0 +/- 0.8ns +/- 0.8ns +/- 0.6ns 0.6 ns 1tCK 0.9/1.1 tCK 0.4/0.6 tCK +/-0.8ns
+/- 0.75ns +/- 0.75ns +/- 0.5ns 0.5 ns 2.5tCK-tDQSS 1tCK +/- 0.75ns tCK/2 +/- 0.75ns tCK/2 +/- 0.75ns
2.5tCK-tDQSS 1tCK +/- 1ns tCK/2 +/- 1ns tCK/2 +/- 1ns
tRPST*1 tHZQ*1
*1 : Changed description method for the same functionality. This means no difference from the previous version. 4.Changed the following AC parameter symbol From tDQCK To tAC Output data access time from CK/CK
Revision 0.3 (Sept. 1999)
1. Changed the odering information. 1-1. Exclude KM mark. From KMM368... 1-2. PCB Revison From - Blank: 1st generation -A : 2nd generation -B : 2nd generation Example:KMM368L3313BT 1-3. Modified binning policy From - 0 (100Mhz/200Mbps@CL=2) - Z (133Mhz/266Mbps@CL=2) - Y (133Mhz/266Mbps@CL=2.5) To M368..... To - 0: 1st gernation - 1: 2nd generation - 2: 3nd generation M368L3313BT0 To - A0 (100Mhz/200Mbps@CL=2) - A2 (133Mhz/266Mbps@CL=2) - B0 (133Mhz/266Mbps@CL=2.5)
Rev. 0.9 June. 2001
M368L3313BT1
Revision 0.4 (December. 1999)
184pin Unbuffered DDR SDRAM MODULE
1. Changed from 3.3V to 2.5V in VDDSPD power.
Revision 0.5 (April. 2000)
1. Changed from 1450mil to 1250mil in PCB height. 2. Changed pin 90 from WP to NC in pin configuration table. 3. Changed in pin configuration table as followings. pin 16 : CK0 -> CK1 pin 17 : CK0 -> /CK1 pin 137 : CK1 -> CK0 pin 138 : CK1 -> /CK0 4. Removed WP in pin description. 5. Changed Clock wiring as followings. CK0 / CK0 6SDRAMs -> 4SDRAMs CK1 / CK1 4SDRAMs -> 6SDRAMs 6. Changed bypassing to reflect common Vdd/Vddq plane. 7. Added A13, BA1. 8. Removed WP from serial PD.
9. Changed Power & DC operating condition. From Min
1.15 VREF+0.18 -0.3 -5 -15.2 15.2
Parameter
I/O Reference voltage Input logic high voltage Input logic low voltage Input leakage current Output High Current (VOUT = 1.95V) Output Low Current (VOUT = 0.35V)
Symbol
VREF VIH(DC) VIL(DC) II IOH IOL
To Max
1.35
Min
0.49*VDDQ VREF+0.15 -0.3 -2 -16.8 16.8
Max
0.51*VDDQ VDDQ+0.3 V R E F -0.15 2
VDDQ+0.3 VREF-0.18 5
10. Added Overshoot/Undershoot spec . Vih(max) = 4.2V, the overshoot voltage duration is 3ns at VDD. . Vil(min) =- 1.5V, the overshoot voltage duration is 3ns at VSS. 11. Changed AC operating conditions as follows. Parameter/Condition Symbol From Min VREF + 0.35 VREF - 0.35 0.7 VDDQ+0.6 0.62 Max Min VREF + 0.31 VREF - 0.31 VDDQ+0.6 To Max
Input High (Logic 1) Voltage, DQ, DQS and DM signals VIH(AC) Input Low (Logic 0) Voltage, DQ, DQS and DM signals. VIL(AC) Input Differential Voltage, CK and CK inputs VID(AC)
Rev. 0.9 June. 2001
Others parts begin by m3
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