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Part: EMF9
Category:
Discrete
-> Transistors
Description:
Company: ROHM Electronics
Datasheet: Download EMF9 datasheet File size : 133 kB
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Datasheet text preview:
EMF9
Transistors
Power management (dual transistors)
EMF9
2SC5585 and 2SK3019 are housed independently in a EMT6 package.
!Application Power management circuit
!External dimensions (Units : mm)
!Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.
0.22
(4) (5) (6)
(3) (2)
1.2 1.6
(1)
0.13
!Structure Silicon epitaxial planar transistor
ROHM : EMT6
Each lead has same dimensions
Abbreviated symbol : F9
!Equivalent circuits
(3)
(2)
(1)
Tr2
Tr1
(4)
(5)
(6)
!Packaging specifications
Type Package Marking Code Basic ordering unit (pieces) EMF9 EMT6 F9 T2R 8000
0.5
0.5 0.5 1.0 1.6
1/5
EMF9
Transistors
!Absolute maximum ratings (Ta=25°C) Tr1
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC Collector current ICP Tj Junction temperature Tstg Range of storage temperature
Single pulse PW=1ms
Limits 15 12 6 500 1.0 150 -55~+150
Unit V V V mA A °C °C
Tr2
Symbol Parameter VDSS Drain-source voltage VGSS Gate-source voltage ID Continuous Drain current IDP Pulsed IDR Continuous Reverse drain current IDRP Pulsed Tch Channel temperature Tstg Range of storage temperature
PW10ms Duty cycle50%
Limits 30 ±20 100 200 100 200 150 -55~+150
Unit V V mA mA mA mA °C °C
Tr1, Tr2
Parameter Total power dissipation Symbol PD Limits 150(TOTAL) Unit mW
120mW per element must not be exceeded. Each terminal mounted on a recommended land.
!Electrical characteristics (Ta=25°C) Tr1
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 12 15 6 - - - 270 - - Typ. - - - - - 100 - 320 7.5 Max. - - - 100 100 250 680 - - Unit V V V nA nA mV - MHz pF Conditions IC=1mA IC=10µA IE=10µA VCB=15V VEB=6V IC=200mA, IB=10mA VCE=2V, IC=10mA VCE=2V, IE=-10mA, f=100MHz VCB=10V, IE=0mA, f=1MHz
Tr2
Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate-threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverce transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) |Yfs| Ciss Coss Crss td(on) tr td(off) tf Min. - 30 - 0.8 - - 20 - - - - - - - Typ. - - - - 5 7 - 13 9 4 15 35 80 80 Max. ±1 - 1.0 1.5 8 13 - - - - - - - - Unit µA V µA V mS pF pF pF ns ns ns ns Conditions VGS=±20V, VDS=0V ID=10µA, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=100µA ID=10mA, VGS=4V ID=1mA, VGS=2.5V VDS=3V, ID=10mA VDS=5V, VGS=0V, f=1MHz
ID=10mA, VDD 5V, VGS=5V, RL=500, RGS=10
2/5
EMF9
Transistors
!Electrical characteristic curves Tr1
1000
COLLECTOR CURRENT : IC (mA)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
VCE=2V Pulsed
DC CURRENT GAIN : hFE
1000
Ta=125°C Ta=25°C Ta=-40°C
VCE=2V Pulsed
1000
Ta=25°C Pulsed
100
100
100
°C
Ta= -40° C
C
Ta=12 5
Ta=25°
IC/IB=50
10
10
10
IC/IB=20 IC/IB=10
1
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
1000
1
1
10
100
1000
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded emitter propagation characteristics
Fig.2 DC current gain vs. collector current
Fig.3 Collector-emitter saturation voltage vs. collector current ( )
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
100 Ta=125°C 25°C -40°C 10
1000
Ta=25°C
Ta=-40°C
TRANSITION FREQUENCY : fT (MHz)
IC/IB=20 Pulsed
BASER SATURATION VOLTAGE : VBE (sat) (mV)
1000
10000
IC/IB=20 Pulsed
1000
VCE=2V Ta=25°C Pulsed
100
Ta=125°C
100
10
1
1
10
100
1000
10
1
10
100
1000
1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
EMITTER CURRENT : IE (mA)
Fig.4 Collector-emitter saturation voltage vs. collector current ( )
Fig.5 Base-emitter saturation voltage vs. collector current
Fig.6 Gain bandwidth product vs. emitter current
EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
1000
IE=0A f=1MHz Ta=25°C
100 Cib
10
Cob
1 0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB(V)
Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
3/5
EMF9
Transistors
Tr2
GATE THRESHOLD VOLTAGE : VGS(th) (V)
200m 100m
DRAIN CURRENT : ID (A)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
VDS=3V Pulsed
2
50m 20m 10m 5m 2m 1m
0.5m
VDS=3V ID=0.1mA Pulsed
50
VGS=4V Pulsed
20 10 5
1.5
Ta=125°C 75°C 25°C -25°C
1
Ta=125°C 75°C 25°C -25°C
2 1 0.5 0.001 0.002
0.5
0.2m 0.1m 0 1 2 3 4
0 -50 -25
0
25
50
75
100
125 150
0.005 0.01 0.02
0.05 0.1
0.2
0.5
GATE-SOURCE VOLTAGE : VGS (V)
CHANNEL TEMPERATURE : Tch (°C)
DRAIN CURRENT : ID (A)
Fig.9 Typical transfer characteristics
Fig.10 Gate threshold voltage vs. channel temperature
Fig.11 Static drain-source on-state resistance vs. drain current ( )
50
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
20 10 5
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
Ta=125°C 75°C 25°C -25°C
VGS=2.5V Pulsed
15
Ta=25°C Pulsed
9
8 7 6 5 4 3 2 1 0 -50 -25 0 25 50 75
ID=100mA
VGS=4V Pulsed
10
ID=50mA
2 1 0.5 0.001 0.002
5
ID=0.1A ID=0.05A
0.005 0.01 0.02
0.05
0.1
0.2
0.5
0 0
5
10
15
20
100 125
150
DRAIN CURRENT : ID (A)
GATE-SOURCE VOLTAGE : VGS (V)
CHANNEL TEMPERATURE : Tch (°C)
Fig.12 Static drain-source on-state resistance vs. drain current ( )
Fig.13 Static drain-source on-state resistance vs. gate-source voltage
Fig.14 Static drain-source on-state resistance vs. channel temperature
0.5
REVERSE DRAIN CURRENT : IDR (A)
0.2
FORWARD TRANSFER ADMITTANCE : |Yfs| (S)
100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m
REVERSE DRAIN CURRENT : IDR (A)
VDS=3V Pulsed
200m
VGS=0V Pulsed
200m 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m VGS=4V
Ta=25°C Pulsed
0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.0002
Ta=-25°C 25°C 75°C 125°C
Ta=125°C 75°C 25°C -25°C
0V
0.0005 0.001 0.002
0.005 0.01 0.02
0.05 0.1 0.2
0.5
0
0.5
1
1.5
0
0.5
1
1.5
DRAIN CURRENT : ID (A)
SOURCE-DRAIN VOLTAGE : VSD (V)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.15 Forward transfer admittance vs. drain current
Fig.16 Reverse drain current vs. source-drain voltage ( )
Fig.17 Reverse drain current vs. source-drain voltage ( )
4/5
EMF9
Transistors
50 Ta=25°C f=1MHZ VGS=0V
SWITHING TIME : t (ns)
1000 tf 500 td(off)
20
CAPACITANCE : C (pF)
200 100 50 20 10 5 2 0.1 0.2
tr td(on)
Ta=25°C VDD=5V VGS=5V RG=10 Pulsed
10 5
Ciss
Coss Crss
2 1 0.5 0.1
0.2
0.5
1
2
5
10
20
50
0.5
1
2
5
10
20
50
100
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (mA)
Fig.18 Typical capacitance vs. drain-source voltage
Fig.19 Switching characteristics
5/5
Others parts begin by em
EM-1 EM-2 EM-3 EM-4 EM-5 EM-6 EM-7
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