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Part: EMF7
Category:
Discrete
-> Transistors
Description:
Company: ROHM Electronics
Datasheet: Download EMF7 datasheet File size : 133 kB
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EMF7
Transistors
Power management (dual transistors)
EMF7
2SC5585 and DTC123EE are housed independently in a EMT6 package.
!Application Power management circuit
!External dimensions (Units : mm)
!Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.
0.22
(4) (5) (6)
(3) (2)
1.2 1.6
(1)
0.13
!Structure Silicon epitaxial planar transistor
ROHM : EMT6
Each lead has same dimensions
!Equivalent circuits
(3) (2) (1)
Abbreviated symbol· F7
DTr2 R2
(4)
R1
Tr1
(5) R1=2.2k R2=2.2k
(6)
!Packaging specifications
Type Package Marking Code Basic ordering unit(pieces) EMF7 EMT6 F7 T2R 8000
0.5
0.5 0.5 1.0 1.6
1/4
EMF7
Transistors
!Absolute maximum ratings (Ta=25°C) Tr1
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol Limits VCBO 15 VCEO 12 VEBO 6 IC 500 Collector current ICP 1.0 PC 150(TOTAL) Power dissipation Tj 150 Junction temperature Tstg -55~+150 Range of storage temperature
1 Single pulse PW=1ms 2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Unit V V V mA A mW °C °C
1 2
DTr2
Parameter Supply voltage Input voltage Collector current Output current Power dissipation Junction temperature Range of storage temperature Limits Symbol 50 VCC -10~+20 VIN 100 IC 100 IO 150(TOTAL) PC Tj 150 Tstg -55~+150 Unit V V mA mA mW °C °C
1 2
1 Characteristics of built-in transistor. 2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
!Electrical characteristics (Ta=25°C) Tr1
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 12 15 6 - - - 270 - - Typ. - - - - - 90 - 320 7.5 Max. - - - 100 100 250 680 - - Unit V V V nA nA mV - MHz pF Conditions IC=1mA IC=10µA IE=10µA VCB=15V VEB=6V IC=200mA, IB=10mA VCE=2V, IC=10mA VCE=2V, IE=-10mA, f=100MHz VCB=10V, IE=0mA, f=1MHz
DTr2
Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio
Characteristics of built-in transistor.
Symbol VI(off) VI(on) VO(on) II IO(off) GI fT R1 R2/R1
Min. - 3.0 - - - 20 - 1.54 0.8
Typ. - - 100 - - - 250 2.2 1.0
Max. 0.5 - 300 3.8 0.5 - - 2.86 1.2
Unit V V mV mA µA - MHz k -
Conditions VCC=5V, IO=100µA VO=0.3V, IO=20mA VO=10mA, II=0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=20mA VCE=10V, IE=-5mA, f=100MHz - -
2/4
EMF7
Transistors
!Electrical characteristic curves Tr1
1000
Ta=125°C Ta=25°C Ta=-40°C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
1000
COLLECTOR CURRENT : IC (mA)
VCE=2V Pulsed
DC CURRENT GAIN : hFE
VCE=2V Pulsed
1000
Ta=25°C Pulsed
100
100
100
5°C
Ta=25° C
Ta= -40°
C
10
Ta=12
IC/IB=50
10
10
IC/IB=20 IC/IB=10
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
1
10
100
1000
1
1
10
100
1000
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded emitter propagation characteristics
Fig.2 DC current gain vs.
Fig.3 Collector-emitter saturation voltage
collector current
vs. collector current ( )
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
100
Ta=125°C Ta=25°C Ta=-40°C
1000
Ta=25°C
Ta=-40°C
TRANSITION FREQUENCY : fT (MHz)
IC/IB=20 Pulsed
BASER SATURATION VOLTAGE : VBE (sat) (mV)
1000
10000
IC/IB=20 Pulsed
1000
VCE=2V Ta=25°C Pulsed
100
Ta=125°C
10
100
10
1
1
10
100
1000
10
1
10
100
1000
1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
EMITTER CURRENT : IE (mA)
Fig.4 Collector-emitter saturation voltage
Fig.5 Base-emitter saturation voltage
Fig.6 Gain bandwidth product
vs. collector current ( )
vs. collector current
vs. emitter current
EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
1000
IE=0A f=1MHz Ta=25°C
100
Cib 10 Cob
1 0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB(V)
Fig.7 Collector output capacitance
vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
3/4
EMF7
Transistors
DTr2
100 50 VO=0.3V
OUTPUT CURRENT : Io (A)
10m 5m 2m 1m 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 Ta=100°C 25°C -40°C
VCC=5V
1k 500
DC CURRENT GAIN : GI
VO=5V
INPUT VOLTAGE : VI(on) (V)
20 10 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m Ta=-40°C 25°C 100°C
200 100 50 20 10 5 2 Ta=100°C 25°C -40°C
0.5
1.0
1.5
2.0
2.5
3.0
1 100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : IO (A)
Fig.9 Input voltage vs. output current (ON characteristics)
Fig.10 Output current vs. input voltage (OFF characteristics)
Fig.11 DC current gain vs. output current
1 500m
OUTPUT VOLTAGE : VO (on) (V)
lO/lI=20
200m 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m Ta=100°C 25°C -40°C
OUTPUT CURRENT : IO (A)
Fig.12 Output voltage vs. output current
4/4
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