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Part: EMF6
Category:
Discrete
-> Transistors
Description:
Company: ROHM Electronics
Datasheet: Download EMF6 datasheet File size : 133 kB
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EMF6
Transistors
Power management (dual transistors)
EMF6
2SA2018 and 2SK3019 are housed independently in a EMT6 package.
!Application Power management circuit
!External dimensions (Units : mm)
!Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.
0.22
(4) (5) (6)
(3) (2)
1.2 1.6
(1)
0.13
!Structure Silicon epitaxial planar transistor
ROHM : EMT6 Each lead has same dimensions
!Equivalent circuits
Abbreviated symbol· F6
(3)
(2)
(1)
Tr2
Tr1
(4)
(5)
(6)
!Packaging specifications
Type Package Marking Code Basic ordering unit (pieces) EMF6 EMT6 F6 T2R 8000
0.5
0.5 0.5 1.0 1.6
1/5
EMF6
Transistors
!Absolute maximum ratings (Ta=25°C) Tr1
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol Limits VCBO -15 VCEO -12 -6 VEBO -500 IC Collector current -1.0 ICP 150(TOTAL) PC Power dissipation Tj 150 Junction temperature Tstg -55~+150 Range of storage temperature Unit V V V mA A mW °C °C
1 2
1 Single pulse PW=1ms 2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Tr2
Symbol Limits Parameter VDSS 30 Drain-source voltage VGSS ±20 Gate-source voltage ID 100 Continuous Drain current 200 IDP Pulsed IDR 100 Continuous Reverse drain current IDRP 200 Pulsed Total power dissipation 150(TOTAL) PD Tch 150 Channel temperature Tstg -55~+150 Range of storage temperature Unit V V mA mA mA mA mW °C °C
1 1 2
1 PW10ms Duty cycle50% 2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
!Electrical characteristics (Ta=25°C) Tr1
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -12 -15 -6 - - - 270 - - Typ. - - - - - -100 - 260 6.5 Max. - - - -100 -100 -250 680 - - Unit V V V nA nA mV - MHz pF Conditions IC=-1mA IC=-10µA IE=-10µA VCB=-15V VEB=-6V IC=-200mA, IB=-10mA VCE=-2V, IC=-10mA VCE=-2V, IE=10mA, f=100MHz VCB=-10V, IE=0mA, f=1MHz
Tr2
Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate-threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverce transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) |Yfs| Ciss Coss Crss td(on) tr td(off) tf Min. - 30 - 0.8 - - 20 - - - - - - - Typ. - - - - 5 7 - 13 9 4 15 35 80 80 Max. ±1 - 1.0 1.5 8 13 - - - - - - - - Unit µA V µA V ms pF pF pF ns ns ns ns Conditions VGS=±20V, VDS=0V ID=10µA, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=100µA ID=10mA, VGS=4V ID=1mA, VGS=2.5V VDS=3V, ID=10mA VDS=5V, VGS=0V, f=1MHz
ID=10mA, VDD 5V, VGS=5V, RL=500, RGS=10
2/5
EMF6
Transistors
!Electrical characteristic curves Tr1
1000
COLLECTOR CURRENT : IC (mA)
VCE=2V Pulsed
DC CURRENT GAIN : hFE
1000
Ta=125°C Ta=25°C Ta=-40°C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
VCE=2V Pulsed
1000
Ta=25°C Pulsed
100
100
100
IC/IB=50 IC/IB=20
°C
Ta= -40° C
Ta=25° C
Ta=12 5
10
10
10
IC/IB=10
1
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
1000
1
1
10
100
1000
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded emitter propagation characteristics
Fig.2 DC current gain vs. collector current
Fig.3 Collector-emitter saturation voltage vs. collector current ( )
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
100
Ta=25°C
Ta=125°C
1000
Ta=25°C
Ta=-40°C
TRANSITION FREQUENCY : fT (MHz)
IC/IB=20 Pulsed
BASER SATURATION VOLTAGE : VBE (sat) (mV)
1000
10000
IC/IB=20 Pulsed
1000
VCE=2V Ta=25°C Pulsed
100
Ta=125°C
Ta=-40°C
10
100
10
1
1
10
100
1000
10
1
10
100
1000
1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
EMITTER CURRENT : IE (mA)
Fig.4 Collector-emitter saturation voltage vs. collector current ( )
Fig.5 Base-emitter saturation voltage vs. collector current
Fig.6 Gain bandwidth product vs. emitter current
EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
1000
IE=0A f=1MHz Ta=25°C
100
Cib 10 Cob
1 0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB(V)
Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
3/5
EMF6
Transistors
Tr2
GATE THRESHOLD VOLTAGE : VGS(th) (V)
0.15 4V
DRAIN CURRENT : ID (A)
200m
3V
DRAIN CURRENT : ID (A)
3.5V
Ta=25°C Pulsed
100m 50m 20m 10m 5m 2m 1m
0.5m
VDS=3V Pulsed
2
VDS=3V ID=0.1mA Pulsed
1.5
0.1
2.5V
1
0.05
2V VGS=1.5V
Ta=125°C 75°C 25°C -25°C
0.5
0.2m
0 0
1
2
3
4
5
0.1m 0
1
2
3
4
0 -50 -25
0
25
50
75
100
125 150
DRAIN-SOURCE VOLTAGE : VDS (V)
GATE-SOURCE VOLTAGE : VGS (V)
CHANNEL TEMPERATURE : Tch (°C)
Fig.9 Typical output characteristics
Fig.10 Typical transfer characteristics
Fig.11 Gate threshold voltage vs. channel temperature
50
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
20 10 5
Ta=125°C 75°C 25°C -25°C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
20 10 5
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
VGS=4V Pulsed
50
Ta=125°C 75°C 25°C -25°C
VGS=2.5V Pulsed
15
Ta=25°C Pulsed
10
2 1 0.5 0.001 0.002
2 1 0.5 0.001 0.002
5
ID=0.1A ID=0.05A
0.005 0.01 0.02
0.05 0.1
0.2
0.5
0.005 0.01 0.02
0.05
0.1
0.2
0.5
0 0
5
10
15
20
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
GATE-SOURCE VOLTAGE : VGS (V)
Fig.12 Static drain-source on-state resistance vs. drain current ( )
Fig.13 Static drain-source on-state resistance vs. drain current ( )
Fig.14 Static drain-source on-state resistance vs. gate-source voltage
9
REVERSE DRAIN CURRENT : IDR (A)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
8 7 6 5 4 3 2 1 0 -50 -25 0 25 50 75
ID=100mA
VGS=4V Pulsed
FORWARD TRANSFER ADMITTANCE : |Yfs| (S)
0.5
VDS=3V Pulsed
200m 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m
0.2 0.1 0.05 0.02 0.01 0.005 0.002 Ta=-25°C 25°C 75°C 125°C
VGS=0V Pulsed
ID=50mA
Ta=125°C 75°C 25°C -25°C
100 125
150
0.001 0.0001 0.0002
0.0005 0.001 0.002
0.005 0.01 0.02
0.05 0.1 0.2
0.5
0
0.5
1
1.5
CHANNEL TEMPERATURE : Tch (°C)
DRAIN CURRENT : ID (A)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.16 Forward transfer admittance vs. Fig.15 Static drain-source on-state drain current resistance vs. channel temperature
Fig.17 Reverse drain current vs. source-drain voltage ( )
4/5
EMF6
Transistors
REVERSE DRAIN CURRENT : IDR (A)
200m 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m VGS=4V
Ta=25°C Pulsed
50
20
CAPACITANCE : C (pF)
Ta=25°C f=1MHZ VGS=0V
SWITHING TIME : t (ns)
1000 tf 500 td(off)
200 100 50 20 10 5 2 0.1 0.2
tr td(on)
Ta=25°C VDD=5V VGS=5V RG=10 Pulsed
10 5
Ciss
0V
Coss Crss
2 1 0.5 0.1
0
0.5
1
1.5
0.2
0.5
1
2
5
10
20
50
0.5
1
2
5
10
20
50
100
SOURCE-DRAIN VOLTAGE : VSD (V)
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (mA)
Fig.18 Reverse drain current vs. source-drain voltage ( )
Fig.19 Typical capacitance vs. drain-source voltage
Fig.20 Switching characteristics
5/5
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