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Part: EMF19
Category:
Discrete
-> Transistors
Description:
Company: ROHM Electronics
Datasheet: Download EMF19 datasheet File size : 133 kB
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Datasheet text preview:
EMF19 / UMF19N
Transistors
Power management (dual transistors)
EMF19 / UMF19N
2SC4617 and DTC123EE are housed independently in a EMT or UMT package.
!External dimensions (Units : mm) !Application Power management circuit
EMF19
0.22
(4) (5) (6) (3) (2) (1)
!Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.
1.2 1.6
0.13
Each lead has same dimensions
ROHM : EMT6 Abbreviated symbol :F19
1.3 0.65 0.7 0.9
0.2
(6)
1.25
0.15
!Equivalent circuits
(3) (2) (1)
2.1
0.1Min.
0to0.1
Each lead has same dimensions
ROHM : UMT6 EIAJ : SC-88
DTr2 R2
(4) (5) R1=2.2k R2=2.2k (6)
R1
Tr1
Abbreviated symbol : F19
!Packaging specifications
Type Package Marking Code Basic ordering unit(pieces)
EMF19 EMT6 F19 T2R 8000
UMF19N UMT6 F19 TR 3000
(1)
2.0
(5)
(2)
!Structure Silicon epitaxial planar transistor
(4)
0.65
(3)
UMF19N
0.5
0.5 0.5 1.0 1.6
1/4
EMF19 / UMF19N
Transistors
!Absolute maximum ratings (Ta=25°C) Tr1
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 60 50 7 150 150 (TOTAL) 150 -55+150 Unit V V V mW °C °C mA
120mW per element must not be exceeded.
DTr2
Parameter Supply voltage Input voltage Collector current Output current Power dissipation Junction temperature Range of storage temperature Limits Symbol 50 VCC -10~+20 VIN 100 IC 100 IO 150(TOTAL) PC Tj 150 Tstg -55~+150 Unit V V mA mA mW °C °C
1 2
1 Characteristics of built-in transistor. 2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
!Electrical characteristics (Ta=25°C) Tr1
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICBO IEBO VCE (sat) hFE fT Cob 60 50 7 - - - 120 - - - - - - - - - 180 2 - - - 0.1 0.1 0.4 560 - 3.5 V V V µA µA V - IC=50µA IC=1mA IE=50µA VCB=60V VEB=7V IC/IB=50mA/5mA VCE=6V, IC=1mA Conditions
MHz VCE=12V, IE=-2mA, f=100MHz PF VCB=12V, IE=0A, f=1MHz
DTr2
Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio
Characteristics of built-in transistor.
Symbol VI(off) VI(on) VO(on) II IO(off) GI fT R1 R2/R1
Min. - 3.0 - - - 20 - - 0.8
Typ. - - 100 - - - 250 2.2 1.0
Max. 0.5 - 300 3.8 0.5 - - - 1.2
Unit V V mV mA µA - MHz k -
Conditions VCC=5V, IO=100µA VO=0.3V, IO=20mA VO=10mA, II=0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=20mA VCE=10V, IE=-5mA, f=100MHz - -
2/4
EMF19 / UMF19N
Transistors
!Electrical characteristic curves Tr1
50
COLLECTOR CURRENT : IC (mA)
VCE=6V COLLECTOR CURRENT : IC (mA)
100
Ta=25°C
COLLECTOR CURRENT : IC (mA)
20 10 5
80
0.50mA mA 0.45 A m 0.40 0.35mA 0.30mA
10
Ta=25°C
30µA 27µA 24µA 21µA
8
Ta=100°C
25°C -55°C
60
0.25mA 0.20mA
6
18µA 15µA 12µA 9µA 6µA 3µA
2 1 0.5 0.2 0.1 0 0.2
40
0.15mA 0.10mA
4
20
0.05mA IB=0A
0 0.4 0.8 1.2 1.6 2.0
2
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 0
IB=0A
4 8 12 16 20
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics ( I )
Fig.3 Grounded emitter output characteristics ( II )
Ta=25°C
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
500
500
Ta=100°C
VCE=5V
0.5
Ta=25°C
DC CURRENT GAIN : hFE
200
DC CURRENT GAIN : hFE
VCE=5V 3V 1V
200
25°C -55°C
0.2
100
100
0.1
IC/IB=50
0.05
50
50
20 10
20
20
0.02 0.01 0.2
10 0.2
0.5
1
2
5
10 20
50 100 200
10 0.2
0.5
1
2
5
10 20
50 100 200
0.5
1
2
5
10 20
50 100 200
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current ( I )
Fig.5 DC current gain vs. collector current ( II )
Fig.6 Collector-emitter saturation voltage vs. collector current
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
0.5
0.5
Ta=25°C
IC/IB=10
0.5
IC/IB=50
0.2
0.2
0.2 0.1 0.05
0.1 0.05
IC/IB=50 20 10
0.1 0.05
Ta=100°C 25°C -55°C
Ta=100°C 25°C -55°C
0.02
0.02
0.02 0.01 0.2 0.5 1 2 5 10 20 50 100
0.01 0.2 0.5 1 2 5 10 20 50 100 200
0.01 0.2
0.5
1
2
5
10
20
50 100 200
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation voltage vs. collector current ( I )
Fig.8 Collector-emitter saturation voltage vs. collector current ( II )
Fig.9 Collector-emitter saturation voltage vs. collector current ( III )
3/4
EMF19 / UMF19N
Transistors
COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF)
TRANSITION FREQUENCY : fT (MHz)
500
Ta=25°C VCE=6V
20
BASE COLLECTOR TIME CONSTANT : Cc rbb' (ps)
10
Cib
Ta=25°C f=1MHz IE=0A IC=0A
200
Ta=25°C f=32MHZ VCB=6V
100
200
5
50
100
2
Co
20
b
50 -0.5
1 0.2 0.5 1 2 5 10 20 50
10 -0.2 -0.5 -1 -2 -5 -10
-1
-2
-5
-10
-20
-50 -100
EMITTER CURRENT : IE (mA)
COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V)
EMITTER CURRENT : IE (mA)
Fig.10 Gain bandwidth product vs. emitter current
Fig.11 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
Fig.12 Base-collector time constant vs. emitter current
DTr2
100 50 VO=0.3V
OUTPUT CURRENT : Io (A)
10m 5m 2m 1m 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 Ta=100°C 25°C -40°C
VCC=5V
1k 500
DC CURRENT GAIN : GI
VO=5V
INPUT VOLTAGE : VI(on) (V)
20 10 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m Ta=-40°C 25°C 100°C
200 100 50 20 10 5 2 Ta=100°C 25°C -40°C
0.5
1.0
1.5
2.0
2.5
3.0
1 100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : IO (A)
Fig.9 Input voltage vs. output current (ON characteristics)
Fig.10 Output current vs. input voltage (OFF characteristics)
Fig.11 DC current gain vs. output current
1 500m
OUTPUT VOLTAGE : VO (on) (V)
lO/lI=20
200m 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m Ta=100°C 25°C -40°C
OUTPUT CURRENT : IO (A)
Fig.12 Output voltage vs. output current
4/4
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