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Part: EFM305
Category:
Analog & Mixed-Signal Processing
Description: Surface Mount Glass Passivated Super Fast Silicon Rectifier ( Voltage Range 50 to 400 Volts Current 3.0 Ampere )
Company: Rectron
Datasheet: Download EFM305 datasheet File size : 59 kB
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Datasheet text preview:
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
EFM301 THRU EFM306
SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER
VOLTAGE RANGE 50 to 400 Volts CURRENT 3.0 Amperes
FEATURES
* * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.24 gram
DO-214AB
0.125 (3.17) 0.115 (2.92) 0.280 (7.11) 0.260 (6.60)
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
0.245 (6.22) 0.220 (5.59)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
R a t i n g s at 25 o C ambient temperature unless otherwise specified. S i n g l e phase, half wave, 60 Hz, resistive or inductive load. F o r capacitive load, derate current by 20%.
0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.320 (8.13) 0.305 (7.75)
0.012 (0.305) 0.006 (0.152)
0.008 (0.203) 0.004 (0.102)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) R AT I N G S M a x i m u m Recurrent Peak Reverse Voltage M a x i m u m RMS Volts M a x i m u m DC Blocking Voltage M a x i m u m Average Forward Current a t TA = 55 oC P e a k Forward Surge Current IFM (surge): 8.3 ms single half s i n e - w a v e superimposed on rated load (JEDEC method) T y p i c a l Junction Capacitance (Note 2) Operating and Storage Temperature Range SYMBOL VR R M VRMS V DC IO I FSM CJ T J , TSTG 50 -65 to + 175 EFM301 50 35 50 EFM302 100 70 100 EFM303 150 105 150 3.0 125 30 EFM304 200 140 200 EFM305 300 210 300 EFM306 400 280 400 UNITS Volts Volts Volts Amps Amps pF
0
C
E L E C T R I C A L CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS M a x i m u m Forward Voltage at 3.0A DC M a x i m u m DC Reverse Current at Rated DC Blocking Voltage M a x i m u m Reverse Recovery Time (Note 1) N O T E S : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. @ T A = 25 o C @ T A =150 o C SYMBOL VF IR trr EFM301 EFM302 EFM303 0.95 EFM304 EFM305 EFM306 1.25 UNITS Volts uAmps 50 35 nSec 2001-5
5.0
RATING AND CHARACTERISTIC CURVES ( EFM301 THRU EFM306 )
AVERAGE FORWARD CURENT, (A)
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50 NONINDUCTIVE 10 NONINDUCTIVE
FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE
6.0 5.0 4.0 3.0 2.0 1.0 0 0 25 50 75 100 125 150 175
Single Phase Half Wave 60Hz Resistive or Inductive Load
trr +0.5A
(-) PULSE GENERATOR (NOTE 2)
(+) 25 Vdc (approx) (-)
D.U.T
0 -0.25A
1 NONINDUCTIVE
OSCILLOSCOPE (NOTE 1)
(+)
-1.0A
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms.
1cm
SET TIME BASE FOR 10 ns/cm
AMBIENT TEMPERATURE (
)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (uA) INSTANTANEOUS FORWARD CURRENT, (A)
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 10
FM 30 4
100
TJ = 150
01 ~E
M3
EF
EF
TJ = 100
M3
05
~E
FM
10
1.0
1.0
.1
.1
TJ = 25
Pulse Width = 300uS 1% Duty Cycle
.01
.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
PEAK FORWARD SURGE CURRENT, (A)
.001 0 .2 .4 .6 .8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 6 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
175 150 125 100 75 50 25 0 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100
8.3ms Single Half Sine-Wave (JEDEC Method)
200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100
TJ = 25
EFM 301 ~EF
30
TJ = 25
6
M30
4
EFM
305
~EF
M30
6
REVERSE VOLTAGE, ( V )
RECTRON
Others parts begin by ef
EF-1 EF-2 EF-3 EF-4
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