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Part: EFM304-W
Category:
Discrete
-> Diodes & Rectifiers
Description: 3A,200V,35ns,SMC(DO-214AB)
Company: Rectron
Datasheet: Download EFM304-W datasheet File size : 59 kB
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Datasheet text preview:
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
EFM301 THRU EFM307
SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER
VOLTAGE RANGE 50 to 600 Volts CURRENT 3.0 Amperes
FEATURES
* * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.24 gram
DO-214AB
0.125 (3.17) 0.115 (2.92) 0.280 (7.11) 0.260 (6.60)
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
0.245 (6.22) 0.220 (5.59)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
R a t i n g s at 25 o C ambient temperature unless otherwise specified. S i n g l e phase, half wave, 60 Hz, resistive or inductive load. F o r capacitive load, derate current by 20%.
0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.320 (8.13) 0.305 (7.75)
0.012 (0.305) 0.006 (0.152)
0.008 (0.203) 0.004 (0.102)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) R AT I N G S M a x i m u m Recurrent Peak Reverse Voltage M a x i m u m RMS Volts M a x i m u m DC Blocking Voltage M a x i m u m Average Forward Current a t TA = 55 oC P e a k Forward Surge Current IFM (surge): 8.3 ms single half s i n e - w a v e superimposed on rated load (JEDEC method) T y p i c a l Junction Capacitance (Note 2) Operating and Storage Temperature Range SYMBOL VR R M VRMS V DC IO I FSM CJ T J , TSTG 50 -55 to + 150 EFM301 50 35 50 EFM302 100 70 100 EFM303 150 105 150 EFM304 200 140 200 3.0 125 30 EFM305 300 210 300 EFM306 400 280 400 EFM307 600 420 600 UNITS Volts Volts Volts Amps Amps pF
0
C
E L E C T R I C A L CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS M a x i m u m Forward Voltage at 3.0A DC M a x i m u m DC Reverse Current at Rated DC Blocking Voltage @ T A = 25 o C @ T A =150 o C SYMBOL VF IR trr 35 EFM301 EFM302 EFM303 0.95 EFM304 5.0 50 50 nSec 2002-12 EFM305 EFM306 1.25 EFM307 1.70 UNITS Volts uAmps
M a x i m u m Reverse Recovery Time (Note 1) N O T E S : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts.
RATING AND CHARACTERISTIC CURVES ( EFM301 THRU EFM307 )
AVERAGE FORWARD CURENT, (A)
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50 NONINDUCTIVE 10 NONINDUCTIVE
FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE
4.5 3.0
Single Phase Half Wave 60Hz Resistive or Inductive Load
trr +0.5A
(-) PULSE GENERATOR (NOTE 2)
(+) 25 Vdc (approx) (-)
D.U.T
0 -0.25A
1 NONINDUCTIVE
OSCILLOSCOPE (NOTE 1)
(+)
1.5
-1.0A
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms.
0 0 25 50 75 100 125 150 175
1cm
SET TIME BASE FOR 10 ns/cm
AMBIENT TEMPERATURE (
)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (uA)
100
~E 05 M3 EF
10
TJ = 100
M3
FM
10
04
30
TJ = 150
INSTANTANEOUS FORWARD CURRENT, (A)
100
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
6
EF 01~
1.0
1
.1
TJ = 25
EF
M3
.10
TJ = 25 Pulse Width = 300uS 1% Duty Cycle
.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
PEAK FORWARD SURGE CURRENT, (A)
.01 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 6 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
175 150 125 100 75 50 25 0 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100
8.3ms Single Half Sine-Wave (JEDEC Method)
200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100
TJ = 25
EFM
EF
M3
07
EFM
301
~EF
M3
305~
04
EFM
307
REVERSE VOLTAGE, ( V )
RECTRON
Mounting Pad Layout
0.185 MAX. (4.69 MAX.)
0.121 MIN. (3.07 MIN.)
0.060 MIN. (1.52 MIN.) 0.320 REF
D i m e n s i o n s in inches and (millimeters)
RECTRON
Others parts begin by ef
EF-1 EF-2 EF-3 EF-4
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