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Part: SA601DK
Category:
RF & Microwaves
-> Mixers
Description: SA601; Low Voltage Lna And Mixer - 1GHz
Company: Philips Semiconductors
Datasheet: Download SA601DK datasheet File size : 70 kB
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Philips Semiconductors RF Communications Products
Product specification
Low voltage LNA and mixer - 1GHz
SA601
DESCRIPTION
The SA601 is a combined RF amplifier and mixer designed for high-performance low-power communication systems from 800-1200MHz. The low-noise preamplifier has a 1.6dB noise figure at 900MHz with 11.5dB gain and an IP3 intercept of -2dBm at the input. The gain is stabilized by on-chip compensation to vary less than ±0.2dB over -40 to +85°C temperature range. The wide-dynamic-range mixer has a 9.5dB noise figure and IP3 of 2dBm at the input at 900MHz. The nominal current drawn from a single 3V supply is 7.4mA. The Mixer can be powered down to further reduce the supply current to 4.4mA.
PIN CONFIGURATION
DK Package
V CC 1 LNA GND 2 LNA IN 3 GND 4 GND 5 GND 6 MIXER PWRDN 7 20 VCC 19 GND 18 LNA OUT 17 GND 16 MIXER IN 15 GND 14 MIXER OUT 13 MIXER OUT 12 GND 11 V CC
FEATURES
· Low current consumption: 7.4mA nominal, 4.4mA with the mixer
powered-down
GND 8 LOIN1 9 LOIN2 10
· Outstanding LNA noise figure: 1.6dB at 900MHz · High system power gain: 18dB (LNA + Mixer) at 900MHz · Excellent gain stability versus temperature and supply voltage · External >-7dBm LO can be used to drive the mixer
APPLICATIONS
· 900MHz cellular front-end (NADC, GSM, AMPS, TACS) · 900MHz cordless front-end (CT1, CT2) · 900MHz receivers
TEMPERATURE RANGE -40 to +85°C ORDER CODE SA601DK DWG # 1563
ORDERING INFORMATION
DESCRIPTION 20-Pin Plastic Shrink Small Outline Package (Surface-mount, SSOP)
BLOCK DIAGRAM
VCC GND LNA OUT GND MIXER IN GND MIXER OUT MIXER OUT GND VCC
20
19
18
17
16
15 IF RF
14
13
12
11
IF LO BUFFER
LNA
1
2
3
4
5
6
7
8
9
10
VCC
GND
LNA IN
GND
GND
GND
MIXER PWRDN
GND
LO IN1
LO IN2
December 15, 1994
1
853-1733 14477
Philips Semiconductors RF Communications Products
Product specification
Low voltage LNA and mixer - 1GHz
SA601
ABSOLUTE MAXIMUM RATINGS3
SYMBOL VCC VIN PD TJMAX PMAX TSTG Supply voltage1 PARAMETER RATING -0.3 to +6 -0.3 to (VCC + 0.3) air)2 980 150 +20 65 to +150 mW °C dBm °C UNITS V V
Voltage applied to any other pin Power dissipation, TA = 25°C (still 20-Pin Plastic SSOP
Maximum operating junction temperature Maximum power input/output Storage temperature range
NOTE: 1. Transients exceeding 8V on VCC pin may damage product. 2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, JA: 20-Pin SSOP = 110°C/W 3. Pins 9 and 10 are sensitive to electrostatic discharge (ESD).
RECOMMENDED OPERATING CONDITIONS
SYMBOL VCC TA TJ Supply voltage Operating ambient temperature range Operating junction temperature PARAMETER RATING 2.7 to 5.5 -40 to +85 -40 to +105 UNITS V °C °C
DC ELECTRICAL CHARACTERISTICS
VCC = +3V, TA = 25°C; unless otherwise stated. LIMITS SYMBOL PARAMETER TEST CONDITIONS MIN TYP 7.4 ICC VLNAIN VLNAOUT VMXIN Supply current LNA input bias voltage LNA output bias voltage Mixer RF input bias voltage Mixer power-down input low 4.4 0.78 2.1 0.94 mA V V V MAX UNITS
December 15, 1994
2
Philips Semiconductors RF Communications Products
Product specification
Low voltage LNA and mixer - 1GHz
SA601
AC ELECTRICAL CHARACTERISTICS
VCC = +3V, TA = 25°C; LOIN = -7dBm @ 964MHz; unless otherwise stated. LIMITS SYMBOL S21 S21/T S21/f S12 S11 S22 P-1dB IP3 NF VGC PGC S11M NFM P-1dB IP3M IP2INT PRFM-IF PLO-IF PLO-RFM PLO-RF PLNARFM PRFMLO LOIN Amplifier gain Gain temperature sensitivity Gain frequency variation Amplifier reverse isolation Amplifier input match1 PARAMETER TEST CONDITIONS 881MHz 881MHz 800MHz - 1.2GHz 881MHz 881MHz 881MHz 881MHz f2 f1 = 25kHz, 881MHz 881MHz fS = 881MHz, fLO = 964MHz, fIF = 83MHz fS = 881MHz, fLO = 964MHz, fIF = 83MHz 881MHz 881MHz 881MHz f2 f1 = 25kHz, 881MHz 881MHz 881MHz 881MHz 881MHz 881MHz 881MHz 881MHz 964MHz -3.5 8.0 -3.5 1.3 18.0 5.0 -3 10 TYP 11.5 0.003 0.01 -20 -10 -10 -16 -2 1.6 19.5 6.5 -10 9.5 -13 -2 12 -7 -25 -38 -40 -40 -23 -7 -0.5 11.0 -0.5 1.9 21.0 8.0 +3 13 UNITS dB dB/°C dB/MHz dB dB dB dBm dBm dB dB dB dB dB dBm dBm dBm dB dB dB dB dB dB dBm
Amplifier output match1 Amplifier input 1dB gain compression Amplifier input third order intercept Amplifier noise figure Mixer voltage conversion gain: RP = RL = 1k Mixer power conversion gain: RP = RL = 1k Mixer input match1 Mixer SSB noise figure Mixer input 1dB gain compression Mixer input third order intercept Mixer input second order intercept Mixer RF feedthrough LO feedthrough to IF LO to mixer input feedthrough LO to LNA input feedthrough LNA output to mixer input Mixer input to LO feedthrough LO drive level
NOTE: 1. Simple L/C elements are needed to achieve specified return loss.
December 15, 1994
3
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