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Part: S1A
Category:
Discrete
-> Diodes & Rectifiers
Description:
Company: Philips Semiconductors
Datasheet: Download S1A datasheet File size : 59 kB
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D168
S1 series SMA controlled avalanche rectifiers
Product specification 2000 Feb 14
Philips Semiconductors
Product specification
SMA controlled avalanche rectifiers
FEATURES · Glass passivated · High maximum operating temperature · Ideal for surface mount automotive applications · Low leakage current · Excellent stability · Guaranteed avalanche energy absorption capability · UL 94V-O classified plastic package · Shipped in 12 mm embossed tape · Marking: cathode, date code, type code · Easy pick and place.
Top view
olumns
S1 series
DESCRIPTION DO-214AC surface mountable package with glass passivated chip. The well-defined void-free case is of a transfer-moulded thermo-setting plastic. The small rectangular package has two J bent leads.
cathode band k a
Side view
MSA474
Fig.1 Simplified outline (DO-214AC) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM S1A S1B S1D S1G S1J S1K S1M VR continuous reverse voltage S1A S1B S1D S1G S1J S1K S1M - - - - - - - 50 100 200 400 600 800 1 000 V V V V V V V PARAMETER repetitive peak reverse voltage - - - - - - - 50 100 200 400 600 800 1 000 V V V V V V V CONDITIONS MIN. MAX. UNIT
2000 Feb 14
2
Philips Semiconductors
Product specification
SMA controlled avalanche rectifiers
S1 series
SYMBOL VRMS S1A S1B S1D S1G S1J S1K S1M IF(AV) IFSM
PARAMETER root mean square voltage
CONDITIONS - - - - - - - averaged over any 20 ms period; Ttp = 110 °C; see Fig.2 t = 8.3 ms half sine wave; Tj = 25 °C prior to surge; VR = VRRMmax -
MIN.
MAX. 35 70 140 280 420 560 700 1 V V V V V V V A
UNIT
average forward current non-repetitive peak forward current S1A to S1J S1K and S1M
- - -65 -65
30 25 +175 +175
A A °C °C
Tstg Tj
storage temperature junction temperature See Fig.3
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS IF = 1 A; see Fig.4 VR = VRRMmax; see Fig.5 S1A to S1J S1K and S1M VR = VRRMmax; Tj = 165 °C; see Fig.5 trr Cd reverse recovery time diode capacitance when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.9 VR = 4 V; f = 1 MHz; see Fig.6 - - - 1 8 1 5 50 - - µA µA µA µs pF - TYP. MAX. 1.1 V UNIT
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a PARAMETER thermal resistance from junction to tie-point; see Fig.7 thermal resistance from junction to ambient note 1 note 2 Notes 1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper 35 µm. 2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 µm. For more information please refer to the `General Part of associated Handbook'. CONDITIONS VALUE 27 100 150 UNIT K/W K/W K/W
2000 Feb 14
3
Others parts begin by s1
S1-1 S1-2 S1-3 S1-4 S1-5 S1-6
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