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Part: PIMT1
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: PIMT1; PNP General Purpose Double Transistor;; Package: SOT457 (TSOP6, SMT6, SSOT6)
Company: Philips Semiconductors
Datasheet: Download PIMT1 datasheet File size : 7 kB
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D302
PIMT1 PNP general purpose double transistor
Product specification 2001 Oct 22
Philips Semiconductors
Product specification
PNP general purpose double transistor
FEATURES · 600 mW total power dissipation · Low current (max. 100 mA) · Low voltage (max. 40 V) · Reduces number of components and required PCB area · Reduced pick and place costs. APPLICATIONS · General purpose switching and amplification.
6 5 4
6 5
PIMT1
PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2
4
TR2
DESCRIPTION PNP transistor pair in an SC-74 (SOT457) plastic package. MARKING TYPE NUMBER PIMT1 MARKING CODE M1 Fig.1
1 2 3
MAM457
TR1
1
2
3
Top view
Simplified outline (SC74; SOT457) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per transistor VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2. total power dissipation Tamb 25 °C; note 1 - 600 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 open emitter open base open collector - - - - - - - -65 - -65 -50 -40 -5 -100 -200 -200 300 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER CONDITIONS MIN. MAX. UNIT
2001 Oct 22
2
Philips Semiconductors
Product specification
PNP general purpose double transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 208
PIMT1
UNIT K/W
1. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Per transistor ICBO IEBO hFE VCEsat Cc fT Note 1. Pulse test: tp 300 µs; 0.02. collector-base cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage collector capacitance transition frequency VCB = -30 V; IE = 0 VCB = -30 V; IE = 0; Tj = 150 °C VEB = -4 V; IC = 0 VCE = -6 V; IC = -1 mA IC = -50 mA; IB = -5 mA; note 1 VCB = -12 V; IE = Ie = 0; f = 1 MHz VCE = -12 V; IC = -2 mA; f = 100 MHz - - - 120 - - 100 -100 -10 -100 - -200 2.2 - mV pF MHz nA µA nA PARAMETER CONDITIONS MIN. MAX. UNIT
2001 Oct 22
3
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