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Part: PHX9NQ20T
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: PHF9NQ20T; PHX9NQ20T; N-channel Trenchmos (tm) Transistor;; Package: SOT186A (3 Lead TO-220F)
Company: Philips Semiconductors
Datasheet: Download PHX9NQ20T datasheet File size : 92 kB
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Datasheet text preview:
Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
PHX9NQ20T , PHF9NQ20T
FEATURES
· 'Trench' technology · Low on-state resistance · Fast switching · Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA VDSS = 200 V ID = 5.2 A
g
RDS(ON) 400 m
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHX9NQ20T is supplied in the SOT186A (FPAK) conventional leaded package
PINNING
PIN 1 2 3 case gate drain source isolated DESCRIPTION
SOT186A (FPAK)
case
SOT186 (FPAK)
case
123
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 °C to 175°C Tj = 25 °C to 175°C; RGS = 20 k Ths = 25 °C; VGS = 10 V Ths = 100 °C; VGS = 10 V Ths = 25 °C Ths = 25 °C MIN. - 55 MAX. 200 200 ± 20 5.2 3.3 21 25 150 UNIT V V V A A A W °C
November 2000
1
Rev 1.100
Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
PHX9NQ20T , PHF9NQ20T
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS Non-repetitive avalanche energy Peak non-repetitive avalanche current CONDITIONS Unclamped inductive load, IAS = 7.2A; tp = 100 µs; Tj prior to avalanche = 25°C; VDD 25 V; RGS = 50 ; VGS = 10 V; refer to fig;15 MIN. MAX. 93 UNIT mJ
IAS
-
8.7
A
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-hs Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. SOT186A package, in free air TYP. MAX. UNIT 55 5 K/W K/W
ELECTRICAL CHARACTERISTICS
Tj= 25°C unless otherwise specified SYMBOL PARAMETER V(BR)DSS VGS(TO) RDS(ON) gfs IGSS IDSS Qg(tot) Qgs Qgd td on tr td off tf Ld Ls Ciss Coss Crss Drain-source breakdown voltage Gate threshold voltage Drain-source on-state resistance Forward transconductance Gate source leakage current Zero gate voltage drain current Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55°C VDS = VGS; ID = 1 mA Tj = 150°C Tj = -55°C VGS = 10 V; ID = 4.5 A Tj = 150°C VDS = 25 V; ID = 4.5 A VGS = ± 10 V; VDS = 0 V VDS = 200 V; VGS = 0 V Tj = 150°C ID = 9 A; VDD = 160 V; VGS = 10 V MIN. 200 178 2 1 3.8 TYP. MAX. UNIT 3 300 6 10 0.05 24 4 12 8 19 25 15 4.5 7.5 959 93 54 4 6 400 0.94 100 10 500 V V V V V m S nA µA µA nC nC nC ns ns ns ns nH nH pF pF pF
VDD = 100 V; RD = 10 ; VGS = 10 V; RG = 5.6 Resistive load Measured from drain lead to centre of die Measured from source lead to source bond pad VGS = 0 V; VDS = 25 V; f = 1 MHz
November 2000
2
Rev 1.100
Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
PHX9NQ20T , PHF9NQ20T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25°C unless otherwise specified SYMBOL PARAMETER IS ISM VSD trr Qrr Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. IF = 9 A; VGS = 0 V IF = 9 A; -dIF/dt = 100 A/µs; VGS = -10 V; VR = 25 V TYP. MAX. UNIT 0.85 92 0.5 8.7 35 1.2 A A V ns µC
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 °C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink Repetitive peak voltage from all three terminals to external heatsink Capacitance from pin 2 to external heatsink CONDITIONS SOT186A package; f = 50-60 Hz; sinusoidal waveform; R.H. 65%; clean and dustfree SOT186 package; R.H. 65%; clean and dustfree f = 1 MHz MIN. TYP. MAX. 2500 UNIT V
Visol
-
1500
V
Cisol
-
10
-
pF
November 2000
3
Rev 1.100
Others parts begin by ph
PH-1 PH-2 PH-3 PH-4 PH-5
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