|
|
Part: PHX6N28T
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: PHX6N28T; Trenchmos (tm) Transistor Standard Level Fet
Company: Philips Semiconductors
Datasheet: Download PHX6N28T datasheet File size : 92 kB
Request For quote: Find where to buy PHX6N28T
Datasheet text preview:
Philips Semiconductors
Objective specification
TrenchMOSTM transistor Standard level FET
FEATURES
· 'Trench' technology · Low on-state resistance · Fast switching · Stable off-state characteristics · High thermal cycling performance · Low thermal resistance
PHX6N28T
QUICK REFERENCE DATA VDSS = 275 V ID = 5.5 A Ptot = 35 W RDS(ON) 450 m
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a full pack plastic envelope using 'trench' technology. The device has low on-state resistance. It is intended for use in electronic lighting ballast circuits, dc to dc converters, Switch Mode Power Supplies (SMPS) and general purpose switching applications. The PHX6N28T is supplied in the SOT186A conventional leaded isolated package.
PINNING - SOT186A
PIN 1 2 3 gate drain DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
d
g
source
123
case isolated
s
LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 °C to 175°C Tj = 25 °C to 175°C; RGS = 20 k Tmb = 25 °C Tmb = 100 °C Tmb = 25 °C Tmb = 25 °C MIN. - 55 MAX. 275 275 ± 20 5.5 3.5 32 35 175 UNIT V V V A A A W °C
February 1998
1
Rev 1.000
Philips Semiconductors
Objective specification
TrenchMOSTM transistor Standard level FET
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 °C unless otherwise specified SYMBOL Visol PARAMETER CONDITIONS MIN. TYP.
PHX6N28T
MAX. 2500
UNIT V
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal wavethree terminals to external heat- form; sink R.H. 65% ; clean and dustfree Capacitance from T2 to external f = 1 MHz heatsink
Cisol
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-hs Rth j-a Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS With heatsink compound SOT186A package, in free air TYP. 55 MAX. 3.5 UNIT K/W K/W
ELECTRICAL CHARACTERISTICS
Tj= 25°C unless otherwise specified SYMBOL PARAMETER V(BR)DSS V(BR)GSS VGS(TO) RDS(ON) gfs IGSS IDSS Qg(tot) Qgs Qgd td on tr td off tf Ld Ld Ls Ciss Coss Crss CONDITIONS MIN. 275 16 Tj = 175°C Tj = -55°C Drain-source on-state resis- VGS = 10 V; ID = 4.1 A tance Forward transconductance VDS = 50 V; ID = 4.1 A Gate source leakage current VGS = ±20 V; VDS = 0 V Zero gate voltage drain current Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance VDS = 275 V; VGS = 0 V; Tj = 175°C ID = 5.6 A; VDD = 200 V; VGS = 10 V Tj = 175°C Tj = 175°C 2.0 1.0 2.9 TYP. MAX. UNIT 3.0 20 0.05 N/A N/A N/A 700 200 100 4.0 4.4 450 740 100 10 500 40 6.3 16 16 50 35 29 880 240 140 V V V V V m m S nA nA µA µA nC nC nC ns ns ns ns nH nH nH pF pF pF Drain-source breakdown VGS = 0 V; ID = 0.25 mA; voltage Gate-source breakdown volt- IG = ±1 mA; age Gate threshold voltage VDS = VGS; ID = 1 mA
VDD = 125 V; ID = 5.6 A; VGS = 10 V; RG = 12 Resistive load Measured from tab to centre of die Measured from drain lead to centre of die Measured from source lead to source bond pad VGS = 0 V; VDS = 25 V; f = 1 MHz
February 1998
2
Rev 1.000
Philips Semiconductors
Objective specification
TrenchMOSTM transistor Standard level FET
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25°C unless otherwise specified SYMBOL PARAMETER IS ISM VSD trr Qrr Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. IF = 5.6 A; VGS = 0 V IF =8.1 A; -dIF/dt = 100 A/µs; VGS = -10 V; VR = 30 V -
PHX6N28T
TYP. MAX. UNIT 0.95 40 8.1 32 2 90 A A V ns µC
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER WDSS CONDITIONS MIN. MAX. 45 UNIT mJ Drain-source non-repetitive ID = 5.5 A; VDD 25 V; VGS = 10 V; unclamped inductive turn-off RGS = 50 ; Tmb = 25 °C energy
February 1998
3
Rev 1.000
Others parts begin by ph
PH-1 PH-2 PH-3 PH-4 PH-5
|
|
|
