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Part: PHP63NQ03LT
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: PHP/PHB/PHD63NQ03LT; Trenchmos (tm) Logic Level FET;; Package: SOT78 (TO-220AB, SC-46)
Company: Philips Semiconductors
Datasheet: Download PHP63NQ03LT datasheet File size : 82 kB
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Datasheet text preview:
PHP/PHB/PHD63NQ03LT
TrenchMOSTM logic level FET
Rev. 01 -- 14 June 2002 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM technology. Product availability: PHP63NQ03LT in SOT78 (TO-220AB) PHB63NQ03LT in SOT404 (D2-PAK) PHD63NQ03LT in SOT428 (D-PAK).
1.2 Features
s Logic level compatible s Low gate charge
1.3 Applications
s DC to DC converters s Switched mode power supplies
1.4 Quick reference data
s VDS = 30 V s Ptot = 111 W s ID = 68.9 A s RDSon 13 m
2. Pinning information
Table 1: 1 2 3 mb Pinning - SOT78, SOT404, SOT428 simplified outline and symbol Simplified outline
[1]
Pin Description gate (g) drain (d) source (s) mounting base, connected to drain (d)
Symbol
mb mb
mb
d
g s
2 2 1 3
MBK116
MBB076
1 Top view
3
MBK091
MBK106
123
SOT78 (TO-220)
[1]
SOT404 (D2-PAK)
SOT428 (D-PAK)
It is not possible to make connection to pin 2 of the SOT404 or SOT428 packages.
Philips Semiconductors
PHP/PHB/PHD63NQ03LT
TrenchMOSTM logic level FET
3. Limiting values
Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) peak gate-source voltage drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp 10 µs tp 50 µs; pulsed; duty cycle = 25 % Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 Tmb = 25 °C; pulsed; tp 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Conditions 25 °C Tj 175 °C 25 °C Tj 175 °C; RGS = 20 k Min -55 -55 Max 30 30 ±20 ±25 68.9 48.7 240 111 +175 +175 68.9 48.7 Unit V V V V A A A W °C °C A A
Source-drain diode
9397 750 09822
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 -- 14 June 2002
2 of 14
Philips Semiconductors
PHP/PHB/PHD63NQ03LT
TrenchMOSTM logic level FET
120 P der (%) 80
03aa16
120 Ider (%) 80
03aa24
40
40
0 0 50 100 150 200 Tmb (°C)
0 0 50 100 150 200 Tmb (°C)
Pt o t P d e r = ---------------------- × 100 % P °
t o t ( 25 C )
ID I d e r = ------------------- × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
103 ID (A)
03ai84
Limit RDSon = VDS / ID
tp = 10 µs
102 100 µs
10
DC
1 ms
1 1 10 VDS (V) 10
Tmb = 25 °C; IDM is single pulse; VGS = 10V.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09822
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 -- 14 June 2002
3 of 14
Others parts begin by ph
PH-1 PH-2 PH-3 PH-4 PH-5
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