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Part: PHP52N06T
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: PHP52N06T; N-channel Enhancement Mode Field-effect Transistor;; Package: SOT78 (TO-220AB, SC-46)
Company: Philips Semiconductors
Datasheet: Download PHP52N06T datasheet File size : 82 kB
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Datasheet text preview:
PHP52N06T
N-channel enhancement mode field-effect transistor
Rev. 01 -- 9 January 2002
M3D307
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM1 technology. Product availability: PHP52N06T in SOT78 (TO-220AB).
2. Features
s Low on-state resistance s 175 °C rated.
3. Applications
s DC to DC converters s Uninterruptible power supplies s Switched mode power supplies.
4. Pinning information
Table 1: 1 2 3 mb Pinning - SOT78, simplified outline and symbol Simplified outline
mb
Pin Description gate (g) drain (d) source (s) mounting base; connected to drain (d)
Symbol
d
g s
MBB076 MBK106
123
SOT78 (TO-220AB)
1.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Philips Semiconductors
PHP52N06T
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 10 V Tmb = 25 °C VGS = 10 V; ID = 25 A Tj = 25 °C Tj = 175 °C 17 22 44 m m Typ Max 60 52 118 175 Unit V A W °C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM EDS(AL) drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp 10 µs non-repetitive avalanche energy unclamped inductive load; ID = 48 A; VDS 55 V; VGS = 10 V; RGS = 50 ; starting Tmb = 25 °C Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 Tmb = 25 °C; pulsed; tp 10 µs; Figure 3 Tmb = 25 °C; Figure 1 RGS = 20 k Conditions Min -55 -55 Max 60 60 ±20 52 37 208 120 +175 +175 52 208 115 Unit V V V A A A W °C °C A A mJ
Source-drain diode
Avalanche ruggedness
9397 750 09121
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 -- 9 January 2002
2 of 12
Philips Semiconductors
PHP52N06T
N-channel enhancement mode field-effect transistor
120 Pder (%) 80
03aa16
120 I der (%)
03aa24
80
40
40
0 0 50 100 150 200 o Tmb ( C)
0 0 50 100 150 200 o Tmb ( C)
Pt o t P d e r = ---------------------- × 100 % P °
t o t ( 25 C )
VGS 4.5 V
ID I d e r = ------------------- × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
103 ID (A) RDSon = VDS / ID 102
03ag58
tp = 10 µs
100 µs 10 DC 10 ms 100 ms 1 1 10 VDS (V) 102
1 ms
Tmb = 25 °C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09121
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 -- 9 January 2002
3 of 12
Others parts begin by ph
PH-1 PH-2 PH-3 PH-4 PH-5
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