|
|
Part: PHP4ND40E
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: Powermos Transistor FredFET, Avalanche Energy Rated: 400v, 4.4a
Company: Philips Semiconductors
Datasheet: Download PHP4ND40E datasheet File size : 89 kB
Request For quote: Find where to buy PHP4ND40E
Datasheet text preview:
Philips Semiconductors
Product specification
PowerMOS transistors FREDFET, Avalanche energy rated
FEATURES
· Repetitive Avalanche Rated · Fast switching · Stable off-state characteristics · High thermal cycling performance · Low thermal resistance · Fast reverse recovery diode
PHP4ND40E, PHB4ND40E
SYMBOL
d
QUICK REFERENCE DATA VDSS = 400 V ID = 4.4 A
g
RDS(ON) 1.8
s
trr = 180 ns
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge ansd full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits. The PHP4ND40E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB4ND40E is supplied in the SOT404 surface mounting package.
PINNING
PIN 1 2 3 tab gate drain 1 source DESCRIPTION
SOT78 (TO220AB)
tab
SOT404
tab
2
drain
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 °C to 150°C Tj = 25 °C to 150°C; RGS = 20 k Tmb = 25 °C; VGS = 10 V Tmb = 100 °C; VGS = 10 V Tmb = 25 °C Tmb = 25 °C MIN. - 55 MAX. 400 400 ± 30 4.4 2.7 18 83 150 UNIT V V V A A A W °C
August 1998
1
Rev 1.100
Philips Semiconductors
Product specification
PowerMOS transistors FREDFET, Avalanche energy rated
AVALANCHE ENERGY LIMITING VALUES
PHP4ND40E, PHB4ND40E
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS Non-repetitive avalanche energy CONDITIONS MIN. MAX. 190 UNIT mJ Unclamped inductive load, IAS = 1.5 A; tp = 0.3 ms; Tj prior to avalanche = 25°C; VDD 50 V; RGS = 50 ; VGS = 10 V; refer to fig:17 Repetitive avalanche energy1 IAR = 4.4 A; tp = 1 µs; Tj prior to avalanche = 25°C; RGS = 50 ; VGS = 10 V; refer to fig:18 Repetitive and non-repetitive avalanche current
EAR IAS, IAR
-
5.5 4.4
mJ A
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. SOT78 package, in free air SOT404 package, pcb mounted, minimum footprint TYP. MAX. UNIT 60 50 1.5 K/W K/W K/W
1 pulse width and repetition rate limited by Tj max. August 1998 2 Rev 1.100
Philips Semiconductors
Product specification
PowerMOS transistors FREDFET, Avalanche energy rated
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified SYMBOL PARAMETER Drain-source breakdown voltage V(BR)DSS / Drain-source breakdown Tj voltage temperature coefficient RDS(ON) Drain-source on resistance VGS(TO) Gate threshold voltage Forward transconductance gfs IDSS Drain-source leakage current IGSS Qg(tot) Qgs Qgd td(on) tr td(off) tf Ld Ld Ls Ciss Coss Crss V(BR)DSS CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 0.25 mA
PHP4ND40E, PHB4ND40E
MIN. 400 2.0 1.3 -
TYP. MAX. UNIT 0.1 1.3 3.0 2.2 1 30 10 26 2 14 10 30 55 38 3.5 4.5 7.5 310 60 36 1.8 4.0 25 250 200 30 4 17 V %/K V S µA µA nA nC nC nC ns ns ns ns nH nH nH pF pF pF
VGS = 10 V; ID = 2.2 A VDS = VGS; ID = 0.25 mA VDS = 30 V; ID = 2.2 A VDS = 400 V; VGS = 0 V VDS = 320 V; VGS = 0 V; Tj = 125 °C Gate-source leakage current VGS = ±30 V; VDS = 0 V Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance ID = 4.4 A; VDD = 320 V; VGS = 10 V VDD = 200 V; RD = 47 ; RG = 18
Measured from tab to centre of die Measured from drain lead to centre of die (SOT78 package only) Measured from source lead to source bond pad VGS = 0 V; VDS = 25 V; f = 1 MHz
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 °C unless otherwise specified SYMBOL PARAMETER IS ISM VSD trr Qrr Irrm Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current CONDITIONS Tmb = 25°C Tmb = 25°C IS = 4.4 A; VGS = 0 V IS = 4.4 A; VGS = 0 V; dI/dt = 100 A/µs IS = 4.4 A; VGS = 0 V; dI/dt = 100 A/µs; 125°C IS = 4.4 A; VGS = 0 V; dI/dt = 100 A/µs IS = 4.4 A; VGS = 0 V; dI/dt = 100 A/µs; 125°C IS = 4.4 A; VGS = 0 V; dI/dt = 100 A/µs; 125°C MIN. TYP. MAX. UNIT 180 220 0.65 2.6 15 4.4 18 1.5 A A V ns ns µC µC A
August 1998
3
Rev 1.100
Others parts begin by ph
PH-1 PH-2 PH-3 PH-4 PH-5
|
|
|
