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Part: PHP4N40E
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: PHP4N40E/PHB4N40E; Powermos Transistors Avalanche Energy Rated
Company: Philips Semiconductors
Datasheet: Download PHP4N40E datasheet File size : 89 kB
Request For quote: Find where to buy PHP4N40E
Datasheet text preview:
Philips Semiconductors
Product specification
PowerMOS transistors Avalanche energy rated
FEATURES
· Repetitive Avalanche Rated · Fast switching · Stable off-state characteristics · High thermal cycling performance · Low thermal resistance
PHP4N40E, PHB4N40E
SYMBOL
d
QUICK REFERENCE DATA VDSS = 400 V
g
ID = 4.4 A RDS(ON) 1.8
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP4N40E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB4N40E is supplied in the SOT404 surface mounting package.
PINNING
PIN 1 2 3 tab gate drain 1 source DESCRIPTION
SOT78 (TO220AB)
tab
SOT404
tab
2
drain
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 °C to 150°C Tj = 25 °C to 150°C; RGS = 20 k Tmb = 25 °C; VGS = 10 V Tmb = 100 °C; VGS = 10 V Tmb = 25 °C Tmb = 25 °C MIN. - 55 MAX. 400 400 ± 30 4.4 2.7 18 83 150 UNIT V V V A A A W °C
December 1998
1
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistors Avalanche energy rated
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS Non-repetitive avalanche energy CONDITIONS
PHP4N40E, PHB4N40E
MIN. -
MAX. 195
UNIT mJ
EAR IAS, IAR
Unclamped inductive load, IAS = 2.7 A; tp = 0.28 ms; Tj prior to avalanche = 25°C; VDD 50 V; RGS = 50 ; VGS = 10 V; refer to fig:17 Repetitive avalanche energy1 IAR = 4.4 A; tp = 2.5 µs; Tj prior to avalanche = 25°C; RGS = 50 ; VGS = 10 V; refer to fig:18 Repetitive and non-repetitive avalanche current
-
5.7 4.4
mJ A
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. SOT78 package, in free air SOT404 package, pcb mounted, minimum footprint TYP. MAX. UNIT 60 50 1.5 K/W K/W K/W
1 pulse width and repetition rate limited by Tj max. December 1998 2 Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistors Avalanche energy rated
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified SYMBOL PARAMETER Drain-source breakdown voltage V(BR)DSS / Drain-source breakdown Tj voltage temperature coefficient RDS(ON) Drain-source on resistance VGS(TO) Gate threshold voltage Forward transconductance gfs IDSS Drain-source leakage current IGSS Qg(tot) Qgs Qgd td(on) tr td(off) tf Ld Ld Ls Ciss Coss Crss V(BR)DSS CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 0.25 mA
PHP4N40E, PHB4N40E
MIN. 400 2.0 1.3 -
TYP. MAX. UNIT 0.1 1.3 3.0 2.2 1 30 10 26 2 14 10 30 55 38 3.5 4.5 7.5 310 60 36 1.8 4.0 25 250 200 30 4 17 V %/K V S µA µA nA nC nC nC ns ns ns ns nH nH nH pF pF pF
VGS = 10 V; ID = 2.2 A VDS = VGS; ID = 0.25 mA VDS = 30 V; ID = 2.2 A VDS = 400 V; VGS = 0 V VDS = 320 V; VGS = 0 V; Tj = 125 °C Gate-source leakage current VGS = ±30 V; VDS = 0 V Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance ID = 4.4 A; VDD = 320 V; VGS = 10 V VDD = 200 V; RD = 47 ; RG = 18
Measured from tab to centre of die Measured from drain lead to centre of die (SOT78 package only) Measured from source lead to source bond pad VGS = 0 V; VDS = 25 V; f = 1 MHz
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 °C unless otherwise specified SYMBOL PARAMETER IS ISM VSD trr Qrr Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS Tmb = 25°C Tmb = 25°C IS = 4.4 A; VGS = 0 V IS = 4.4 A; VGS = 0 V; dI/dt = 100 A/µs MIN. TYP. MAX. UNIT 250 2.2 4.4 18 1.2 A A V ns µC
December 1998
3
Rev 1.200
Others parts begin by ph
PH-1 PH-2 PH-3 PH-4 PH-5
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