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Part: PHN1013
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: PHN1013; Trenchmos (tm) Transistor
Company: Philips Semiconductors
Datasheet: Download PHN1013 datasheet File size : 117 kB
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Philips Semiconductors
Product specification
TrenchMOSTM transistor
PHN1013
FEATURES
· 'Trench' technology · Low on-state resistance · Fast switching · Stable off-state characteristics · High thermal cycling performance · Low-profile surface mount package
SYMBOL
d
QUICK REFERENCE DATA VDSS = 30 V ID = 10 A
g
RDS(ON) 13.5 m
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, using 'trench' technology to achieve very low on-resistance in a low-profile, surface mount package. This device is intended for use in computer motherboard d.c. to d.c. converters and general purpose switching applications. The PHN1013 is supplied in the SOT96 (SO8) 8-leaded, low profile, surface mounting package.
PINNING
PIN 1-3 4 5-8 DESCRIPTION source gate drain
SOT96 (SO8)
8 7 6 5
pin 1 index
1
2
3
4
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 k Ta = 25 °C, tp 10 s Ta = 70 °C, tp 10 s Ta = 25 °C Ta = 25 °C Ta = 70 °C MIN. - 55 MAX. 30 30 20 10 8 40 2.5 1.6 150 UNIT V V V A A A W W °C
THERMAL RESISTANCES
SYMBOL Rth j-a PARAMETER Thermal resistance junction to ambient CONDITIONS FR4 board, minimum footprint, tp 10 s. TYP. MAX. 50 UNIT K/W
January 1998
1
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOSTM transistor
PHN1013
STATIC CHARACTERISTICS
Tj= 25°C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 250 µA; VDS = VGS; ID = 250 µA VDS = 30 V; VGS = 0 V; VGS = ±10 V; VDS = 0 V VGS = 10 V; ID = 10 A VGS = 5 V; ID = 5 A Tj = 55°C MIN. 30 1 TYP. 2.1 0.05 10 11 MAX. 1 25 100 13.5 20 UNIT V V µA µA nA m m
DYNAMIC CHARACTERISTICS
Tj = 25°C unless otherwise specified SYMBOL gfs Qg(tot) Qgs Qgd Ciss Coss Crss td on tr td off tf PARAMETER Forward transconductance Total gate charge Gate-source charge Gate-drain (Miller) charge Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time CONDITIONS VDS = 25 V; ID = 10 A ID = 10 A; VDD = 30 V; VGS = 10 V MIN. TYP. 18 49 6.6 19 1400 514 218 15 67 77 71 MAX. 1700 620 260 UNIT S nC nC nC pF pF pF ns ns ns ns
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 10 A; VGS = 10 V; RG = 10 Resistive load
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25°C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS Ta = 25 °C, tp 10 s IF = 10 A; VGS = 0 V IF = 40 A; VGS = 0 V IF = 10 A; -dIF/dt = 100 A/µs; VGS = -10 V; VR = 30 V MIN. TYP. 0.8 1.0 50 0.1 MAX. 10 40 1.2 UNIT A A V V ns µC
January 1998
2
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOSTM transistor
PHN1013
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
Normalised Power Derating
100
Transient thermal impedance, Zth j-a (K/W) D= 0.5
PHN1013
10
0.2 0.1 0.05 0.02
1
0.1 P D 0.01 T
tp D= tp T
0
20
40
60
80 Tamb / C
100
120
140
0.001
1us
10us 100us 1ms 10ms 100ms pulse width, tp (s)
1s
10s
Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 °C = f(Ta)
ID% Normalised Current Derating
Fig.4. Transient thermal impedance. Zth j-a = f(t); parameter D = tp/T
ID, Drain current (Amps) 5V 20 V 6V 10 V 15 PHN1013 4.5 V
120 110 100 90 80 70 60 50 40 30 20 10 0
20
10 VGS = 4 V 5
Tj = 25 C
0
20
40
60 80 Tamb / C
100
120
140
0
0
0.2
0.4 0.6 0.8 VDS, Drain-Source voltage (Volts)
1
Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 °C = f(Ta); conditions: VGS 10 V
Fig.5. Typical output characteristics, Tj = 25 °C. ID = f(VDS); parameter VGS
RDS(on), Drain-Source on resistance (mOhms) PHN1013 VGS = 4 V 4.5 V
100
ID, Drain current (Amps)
PHN1013
60 50 40 30 20
10
R
(O DS
= N)
VD
D S/I
1 ms 10 ms
1 DC
100 ms
5V 6V 10 V Tj = 25 C 0 5 10 15 ID, Drain current (Amps) 20 V 20
0.1
10
Ta = 25 C 0.01 0.1
0
1 10 VDS, Drain-source voltage (Volts) 100
Fig.3. Safe operating area. Ta = 25 °C ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.6. Typical on-state resistance, Tj = 25 °C. RDS(ON) = f(ID); parameter VGS
January 1998
3
Rev 1.000
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