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Part: PHM25NQ10T
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: PHM25NQ10T; Trenchmos (tm) Standard Level FET;; Package: SOT685-1 (HVSON8, QFPAK)
Company: Philips Semiconductors
Datasheet: Download PHM25NQ10T datasheet File size : 134 kB
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Datasheet text preview:
PHM25NQ10T
TrenchMOSTM standard level FET
Rev. 03 -- 11 September 2003
M3D879
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM technology.
1.2 Features
s SOT96 (SO-8) footprint compatible s Surface mounted package s Low thermal resistance s Low profile.
1.3 Applications
s DC-to-DC primary side s Por table equipment applications.
1.4 Quick reference data
s VDS 100 V s Ptot 62.5 W s ID 30.7 A s RDSon 30 m.
2. Pinning information
Table 1: Pin 1,2,3 4 5,6,7,8 mb Pinning - SOT685-1 (QLPAK), simplified outline and symbol Description source (s) gate (g) drain (d) mounting base, connected to drain (d)
mb g s
[1]
Simplified outline
1 4
Symbol
d
8 Bottom view
5
MBL585
MBB076
SOT685-1 (QLPAK)
[1] Shaded area indicates terminal 1 index area.
Philips Semiconductors
PHM25NQ10T
TrenchMOSTM standard level FET
3. Ordering information
Table 2: Ordering information Package Name PHM25NQ10T QLPAK Description Plastic surface mounted package; no leads; 8 terminals. Version SOT685 Type number
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp 10 µs unclamped inductive load; ID = 9.9 A; tp = 0.21 ms; VDD 100 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 °C unclamped inductive load; ID = 1 A; tp = 0.021 ms; VDD 100 V; RGS = 50 ; VGS = 10 V
[1] [2]
Conditions 25 °C Tj 150 °C 25 °C Tj 150 °C; RGS = 20 k Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 Tmb = 25 °C; pulsed; tp 10 µs; Figure 3 Tmb = 25 °C; Figure 1
Min -55 -55 -
Max 100 100 ±20 30.7 19.4 60 62.5 +150 +150 30.7 60 170
Unit V V V A A A W °C °C A A mJ
Source-drain diode
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy EDS(AL)R repetitive drain-source avalanche energy
-
1.70
mJ
[1] [2]
Duty cycle limited by maximum junction temperature. Repetitive avalanche failure is not determined simply by thermal effects. Repetitive avalanche transients should only be applied for shor t bursts, not every switching cycle.
9397 750 11843
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 03 -- 11 September 2003
2 of 13
Philips Semiconductors
PHM25NQ10T
TrenchMOSTM standard level FET
120 P der (%) 80
03aa15
120 Ider (%) 80
03aa23
40
40
0 0 50 100 150 200 Tmb (°C)
0 0 50 100 150 200 Tmb (°C)
Pt o t P d e r = ---------------------- × 100 % P °
t o t ( 25 C )
ID I d e r = ------------------- × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
102 ID (A) tp = 10 µ s 100 µ s
03aj36
10
Limit RDSon = VDS / ID 1 ms DC 10 ms
1
10-1 1 10 102 VDS (V) 103
Tmb = 25 °C; IDM is single pulse; VGS = 10 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 11843
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 03 -- 11 September 2003
3 of 13
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