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Part: PHB47NQ10T
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: PHP47NQ10T; PHB47NQ10T; N-channel Enhancement Mode Field-effect Transistor;; Package: SOT78 (TO-220AB, SC-46)
Company: Philips Semiconductors
Datasheet: Download PHB47NQ10T datasheet File size : 89 kB
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Datasheet text preview:
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
Rev. 01 -- 16 May 2001 Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM1 technology. Product availability: PHP47NQ10T in SOT78 (TO-220AB) PHB47NQ10T in SOT404 (D2-PAK).
2. Features
s Fast switching s Ver y low on-state resistance.
3. Applications
s DC to DC converters s Switched mode power supplies.
c
4. Pinning information
c
Table 1: Pin 1 2 3 mb
Pinning - SOT78 and SOT404, simplified outline and symbol Description gate (g) drain (d) source (s) mounting base; connected to drain (d)
1
MBK106
Simplified outline
mb mb
Symbol
[1]
d
g 2 3
MBK116 MBB076
s
123
SOT78 (TO-220AB)
[1] 1.
SOT404 (D2-PAK)
It is not possible to make connection to pin 2 of the SOT404 package. TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Tj = 25 °C; VGS = 10 V; ID = 25 A Conditions Tj = 25 to 175 °C Tmb = 25 °C; VGS = 10 V Tmb = 25 °C Typ - - - - 20 Max 100 47 166 175 28 Unit V A W °C m
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V Figure 2 and 3 Tmb = 100 °C; VGS = 10 V Figure 2 IDM Ptot Tstg Tj IS ISM peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) peak source (diode forward) current non-repetitive avalanche energy Tmb = 25 °C Tmb = 25 °C; pulsed; tp 10 µs Tmb = 25 °C; pulsed; tp 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Conditions Tj = 25 to 175 °C Tj = 25 to 175 °C; RGS = 20 k Min - - - - - - - -55 -55 - - Max 100 100 ±20 47 33 187 166 175 175 47 187 Unit V V V A A A W °C °C A A
Source-drain diode
Avalanche ruggedness EAS unclamped inductive load; IAS = 30 A; tp = 0.1 ms; VDD 25 V; RGS = 50 ; VGS = 5 V; starting Tj = 25 °C; Figure 4 - 45 mJ
9397 750 08243
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 -- 16 May 2001
2 of 14
Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
03aa16
03aa24
120 Pder (%) 100
120 Ider (%) 100
80
80
60
60
40
40
20
20
0 0 50 100 150 200 o Tmb ( C)
0 0 50 100 150 200 o Tmb ( C)
Pt o t P d e r = ---------------------- × 100 % P °
t o t ( 25 C )
VGS 10 V ID I d e r = ------------------ × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
103 ID (A) 102 RDSon = VDS / ID tp = 1 µs 10 µs 100 µs 10 D.C. 10 ms 100ms 1 1 10 102 3 VDS (V) 10 1 ms
003aaa097
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
102 IAS (A)
003aaa098
25 oC 10
o Tj prior to avalanche = 150 C
1 10-3 10-2 10-1 1 tp (ms) 10
Tmb = 25 °C; IDM is single pulse.
Unclamped inductive load; VDD 25 V; RGS = 50 ; VGS = 5 V; starting Tj = 25 °C and 150 °C.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
Fig 4. Non-repetitive avalanche ruggedness current as a function of pulse duration.
9397 750 08243
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 -- 16 May 2001
3 of 14
Others parts begin by ph
PH-1 PH-2 PH-3 PH-4 PH-5
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