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Part: PHB45N03LT
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: PHP45N03LT; PHB45N03LT; PHD45N03LT; N-channel Trenchmos Transistor
Company: Philips Semiconductors
Datasheet: Download PHB45N03LT datasheet File size : 87 kB
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Datasheet text preview:
PHP45N03LT; PHB45N03LT; PHD45N03LT
N-channel TrenchMOS transistor
Rev. 06 -- 05 October 2000 Product specification
1. Description
N-channel logic level field-effect power transistor in a plastic package using TrenchMOSTM1 technology. Product availability: PHP45N03LT in SOT78 (TO-220AB) PHB45N03LT in SOT404 (D2-PAK) PHD45N03LT in SOT428 (D-PAK).
2. Features
s Low on-state resistance s Fast switching.
3. Applications
s Computer motherboard DC to DC converters s Switched mode power supplies.
c c
4. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT78, SOT404, SOT428 simplified outline and symbol Description gate (g) drain (d) source (s) mounting base, connected to drain (d)
MBK106
Simplified outline
mb mb
mb
Symbol
[1]
d
g
2
2 1 3
MBK116
1 Top view
3
MBK091
MBB076
s
123
SOT78 (TO-220AB)
[1] 1.
SOT404 (D2-PAK)
SOT428 (D-PAK)
It is not possible to make connection to pin 2 of the SOT404 or SOT428 packages. TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
PHP45N03LT series
N-channel TrenchMOS transistor
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 175 °C Tmb = 25 °C; VGS = 5 V Tmb = 25 °C VGS = 10 V; ID = 25 A VGS = 5 V; ID = 25 A Typ - - - - 16 20 Max 25 45 86 175 21 24 Unit V A W °C m m drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 IDM Ptot Tstg Tj IS ISM peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) peak source (diode forward) current Tmb = 25 °C Tmb = 25 °C; pulsed; tp 10 µs Tmb = 25 °C; pulsed; tp 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Conditions Tj = 25 to 175 °C Tj = 25 to 175 °C; RGS = 20 k Min - - - - - - - -55 -55 - - Max 25 25 ±15 45 30 180 86 +175 +175 45 180 Unit V V V A A A W °C °C A A
Source-drain diode
9397 750 07579
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 06 -- 05 October 2000
2 of 15
Philips Semiconductors
PHP45N03LT series
N-channel TrenchMOS transistor
120 P der 110 (%) 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100
03ac97
03ac98
120 Ider (%) 110 100 90 80 70 60 50 40 30 20 10
120 140 160 180 Tmb (oC)
0 0 20 40 60 80 100 120 140 160 180 Tmb ( oC)
Pt o t P d e r = ---------------------- × 100 % P °
t o t ( 25 C )
VGS 5 V ID I d e r = ------------------ × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
03ac96
103 ID (A) 102 RDSon = VDS / ID
tp = 10 µs tp = 10 us 100 µs
10
P
=
tp T
DC
tp T t
1 ms 10 ms 100 ms
1 1 10 VDS (V)
102
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07579
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 06 -- 05 October 2000
3 of 15
Others parts begin by ph
PH-1 PH-2 PH-3 PH-4 PH-5
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