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Part: PHB29N08T
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: PHP/PHB29N08T; Trenchmos (tm) Standard Level FET;; Package: SOT404 (D2-PAK)
Company: Philips Semiconductors
Datasheet: Download PHB29N08T datasheet File size : 228 kB
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Datasheet text preview:
PHP/PHB29N08T
TrenchMOSTM standard level FET
Rev. 01 -- 29 May 2002 Product data
1. Description
N-channel standard level field-effect power transistor in a plastic package using TrenchMOSTM technology. Product availability: PHP29N08T in SOT78 (TO-220AB) PHB29N08T in SOT404 (D2-PAK).
2. Features
s High noise immunity s Low on-state resistance.
3. Applications
s Industrial motor control.
4. Pinning information
Table 1: Pinning - SOT78, SOT404 simplified outline and symbol Simplified outline
mb mb
Pin Description 1 2 3 mb gate (g)
Symbol
d
drain (d) source (s) mounting base, connected to drain (d)
[1]
g s
MBB076
2 1
MBK106
3
MBK116
123
SOT78 (TO-220AB)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
SOT404 (D2-PAK)
Philips Semiconductors
PHP/PHB29N08T
TrenchMOSTM standard level FET
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 °C Tj 175 °C Tmb = 25 °C; VGS = 11 V Tmb = 25 °C VGS = 11 V; ID = 14 A Tj = 25 °C Tj = 175 °C 40 96 50 120 m m Typ Max 75 27 88 175 Unit V A W °C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp 10 µs Tmb = 25 °C; VGS = 11 V; Figure 2 and 3 Tmb = 100 °C; VGS = 11 V; Figure 2 Tmb = 25 °C; pulsed; tp 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Conditions 25 °C Tj 175 °C 25 °C Tj 175 °C; RGS = 20 k Min -55 -55 Max 75 75 ±30 27 19.2 108 88 +175 +175 27 108 Unit V V V A A A W °C °C A A
Source-drain diode
9397 750 09651
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 -- 29 May 2002
2 of 13
Philips Semiconductors
PHP/PHB29N08T
TrenchMOSTM standard level FET
120 P der (%) 80
03aa16
120 Ider (%) 80
03aa24
40
40
0 0 50 100 150 200 Tmb (°C)
0 0 50 100 150 200 Tmb (°C)
Pt o t P d e r = ---------------------- × 100 % P °
t o t ( 25 C )
ID I d e r = ------------------ × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
103 ID (A)
03aj06
102
Limit RDSon = VDS / ID
tp = 10 µs
10 100 µs DC 1 ms
1 1 10 102 VDS (V) 103
Tmb = 25 °C; IDM is single pulse; VGS = 11V.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09651
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 -- 29 May 2002
3 of 13
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PH-1 PH-2 PH-3 PH-4 PH-5
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