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Part: PDTC114TT
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> NPN
-> SOT/Surface Mount
Description: NPN Resistor-equipped Transistor
Company: Philips Semiconductors
Datasheet: Download PDTC114TT datasheet File size : 5 kB
Request For quote: Find where to buy PDTC114TT
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
PDTC114TT NPN resistor-equipped transistor
Objective specification Supersedes data of 1998 May 19 1999 Apr 16
Philips Semiconductors
Objective specification
NPN resistor-equipped transistor
FEATURES · Built-in bias resistor R1 (typ. 10 k) · Simplification of circuit design · Reduces number of components and board space. APPLICATIONS · Especially suitable for space reduction in interface and driver circuits · Inverter circuit configurations without use of an external resistor.
handbook, 4 columns
PDTC114TT
3 3 R1 1 2 1 2
MAM360
Top view
Fig.1 Simplified outline (SOT23) and symbol. DESCRIPTION NPN resistor-equipped transistor in a SOT23 plastic package. PNP complement: PDTA114TT.
1 3 2
MARKING TYPE NUMBER PDTC114TT Note 1. = p : Made in Hong Kong. = t : Made in Malaysia. MARKING CODE(1) 12
PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground collector/output
MGA893 - 1
Fig.2
Equivalent inverter symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VC B O VC E O VE B O IO IC M Pt o t Ts t g Tj Ta m b Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - -65 - -65 MIN. MAX. 50 50 5 100 100 250 +150 150 +150 V V V mA mA mW °C °C °C UNIT
1999 Apr 16
2
Philips Semiconductors
Objective specification
NPN resistor-equipped transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IC E O IE B O hFE VC E s a t R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage input resistor collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz CONDITIONS IE = 0; VCB = 50 V IB = 0; VCE = 30 V IB = 0; VCE = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 1 mA; VCE = 5 V IC = 10 mA; IB = 0.5 mA MIN. - - - - 200 - 7 - PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500
PDTC114TT
UNIT K/W
TYP. - - - - - - 10 -
MAX. 100 1 50 100 - 150 13 2.5
UNIT nA µA µA nA mV k pF
MGM902
handbook, halfpage
(1)
600
10-1 handbook, halfpage
MGM901
hFE
(1) (2) (3)
VCEsat (V)
400
(2)
(3)
200
0 10-1
1
10
IC (mA)
10 2
10-2 10-1
1
10
IC (mA)
10 2
VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = -40 °C.
IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = -40 °C.
Fig.3
DC current gain as a function of collector current; typical values.
Fig.4
Collector-emitter saturation voltage as a function of collector current; typical values.
1999 Apr 16
3
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