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Part: PDTC114TE
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> NPN
-> SOT/Surface Mount
Description: NPN Resistor-equipped Transistor
Company: Philips Semiconductors
Datasheet: Download PDTC114TE datasheet File size : 5 kB
Request For quote: Find where to buy PDTC114TE
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
PDTC114TE NPN resistor-equipped transistor
Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 1998 Aug 03
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
FEATURES · Built-in bias resistor R1 (typ. 10 k) · Simplification of circuit design · Reduces number of components and board space. APPLICATIONS · Especially suitable for space reduction in interface and driver circuits · Inverter circuit configurations without use of an external resistor.
1 Top view 2
handbook, 4 columns
PDTC114TE
3 3 R1 1 2
MAM347
Fig.1 Simplified outline (SC-75; SOT416) and symbol. DESCRIPTION NPN resistor-equipped transistor in an SC-75; SOT416 plastic package. PNP complement: PDTA114TE.
1 3 2
MARKING TYPE NUMBER PDTC114TE MARKING CODE 24
PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground collector/output
MGA893 - 1
Fig.2
Equivalent inverter symbol.
QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor Tamb 25 °C IC = 1 mA; VCE = 5 V CONDITIONS open base - - - - 200 7 MIN. - - - - - 10 TYP. MAX. 50 100 100 150 - 13 k UNIT V mA mA mW
1998 Aug 03
2
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IO ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICEO IEBO hFE VCEsat R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain input resistor collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz CONDITIONS IE = 0; VCB = 50 V IB = 0; VCE = 30 V IB = 0; VCE = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 1 mA; VCE = 5 V MIN. - - - - 200 - 7 - PARAMETER CONDITIONS VALUE 833 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - -65 - -65 MIN.
PDTC114TE
MAX. 50 50 5 100 100 150 +150 150 +150 V V V
UNIT
mA mA mW °C °C °C
UNIT K/W
thermal resistance from junction to ambient note 1
TYP. - - - - - - 10 -
MAX. 100 1 50 100 - 150 13 2.5
UNIT nA µA µA nA mV k pF
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
1998 Aug 03
3
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