|
|
Part: PDTC114EEF
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> NPN
-> SOT/Surface Mount
Description: NPN Resistor-equipped Transistor
Company: Philips Semiconductors
Datasheet: Download PDTC114EEF datasheet File size : 77 kB
Request For quote: Find where to buy PDTC114EEF
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
PDTC114EEF NPN resistor-equipped transistor
Product specification Supersedes data of 1998 Nov 11 1999 May 31
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
FEATURES · Power dissipation comparable to SOT23 · Built-in bias resistors R1 and R2 (typ. 10 k each) · Simplification of circuit design · Reduces number of components and board space. APPLICATIONS · Especially suitable for space reduction in interface and driver circuits · Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor encapsulated in an ultra small plastic SMD SC-89 (SOT490) package. PNP complement: PDTA114EEF. PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground collector/output
1 2
MGA893 - 1
PDTC114EEF
handbook, halfpage
3 R1 1 R2
3
1 Top view
2
MAM412
2
Fig.1 Simplified outline (SC-89; SOT490) and symbol.
MARKING TYPE NUMBER PDTC114EEF MARKING CODE 09
3
Fig.2
Equivalent inverter symbol.
QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 -----R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb 25 °C IC = 5 mA; VCE = 5 V CONDITIONS open base - - - - 30 7 0.8 MIN. - - - - - 10 1 TYP. MAX. 50 100 100 250 - 13 1.2 k UNIT V mA mA mW
1999 May 31
2
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Refer to SC-89 (SOT490) standard mounting conditions. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC-89 (SOT490) standard mounting conditions. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 -----R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage input-off voltage input-on voltage input resistor resistor ratio collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz CONDITIONS IE = 0; VCB = 50 V IB = 0; VCE = 30 V IB = 0; VCE = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 5 mA; VCE = 5 V IC = 10 mA; IB = 0.5 mA IC = 100 µA; VCE = 5 V IC = 10 mA; VCE = 0.3 V MIN. - - - - 30 - - 2.5 7 0.8 - PARAMETER CONDITIONS output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 - - - - - -65 - -65 CONDITIONS open emitter open base open collector - - - MIN.
PDTC114EEF
MAX. 50 50 10 +40 -10 100 100 250 +150 250 +150 V V V V V
UNIT
mA mA mW °C °C °C
MAX. 500
UNIT K/W
thermal resistance from junction to ambient in free air; note 1
TYP. - - - - - - 1.1 1.8 10 1 -
MAX. 100 1 50 400 - 150 0.8 - 13 1.2 2.5
UNIT nA µA µA µA mV V V k
pF
1999 May 31
3
Others parts begin by pd
PD-1 PD-2 PD-3 PD-4 PD-5 PD-6 PD-7 PD-8 PD-9 PD-10 PD-11 PD-12 PD-13 PD-14 PD-15 PD-16 PD-17 PD-18 PD-19 PD-20
|
|
|
