|
|
Part: PDTC113Z
Category:
Discrete
-> Transistors
-> Bipolar
-> RETs (Resistor Equipped transistors)
Description: NPN Resistor-equipped Transistor; R1 = 1 Kohm, R2 = 10 Kohm.<<<>>>features Built-in Bias Resistors <<<>>>Reduces Component Count <<<>>>Simplifies Circuit Design <<<>>>Reduces Pick And Place Costs. <<<>>><<<>>> <<<>>> Applications General Purpose Switching And Amplification <<<>>>Circuit Driver. <<<>>>Inverter And Interface Circuits
Company: Philips Semiconductors
Datasheet: Download PDTC113Z datasheet File size : 77 kB
Request For quote: Find where to buy PDTC113Z
Datasheet text preview:
PDTC113ZT
NPN resistor-equipped transistor; R1 = 1 k, R2 = 10 k
Rev. 01 -- 5 March 2004 Objective data sheet
1. Product profile
1.1 General description
NPN resistor-equipped transistor. PNP complement: PDTA113ZT.
1.2 Features
s Built-in bias resistors s Simplifies circuit design s Reduces component count s Reduces pick and place costs.
1.3 Applications
s General purpose switching and amplification s Inver ter and interface circuits s Circuit driver.
1.4 Quick reference data
Table 1: Symbol VCEO IO R1 R2 Quick reference data Parameter collector-emitter voltage output current (DC) bias resistor bias resistor Conditions Min Typ 1 10 Max 50 100 Unit V mA k k
2. Pinning information
Table 2: Pin 1 2 3 Discrete pinning Description base emitter collector
3
R1
Simplified outline
Symbol
3 1
R2
1 Top view
2
sym007
2
Philips Semiconductors
PDTC113ZT
NPN resistor-equipped transistor; R1 = 1 k, R2 = 10 k
3. Ordering information
Table 3: Ordering information Package Name PDTC113ZT Description plastic surface mounted package; 3 leads Version SOT23 Type number
4. Marking
Table 4: Marking Marking code [1] *AH Type number PDTC113ZT
[1] * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China.
5. Limiting values
Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO VI Parameter collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb
[1]
Conditions open emitter open base open collector
Min -
Max 50 50 5 +10 -5 100 100 250 +150 150 +150
Unit V V V V V mA mA mW °C °C °C
output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C
[1]
-65 -65
Refer to standard mounting conditions.
6. Thermal characteristics
Table 6: Symbol Rth(j-a)
[1]
Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air
[1]
Typ 500
Unit K/W
Refer to standard mounting conditions.
9397 750 12553
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 -- 5 March 2004
2 of 7
Philips Semiconductors
PDTC113ZT
NPN resistor-equipped transistor; R1 = 1 k, R2 = 10 k
7. Characteristics
Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol ICBO ICEO Parameter collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage input-off voltage input-on voltage input resistor resistor ratio collector capacitance VCB = 10 V; IE = Ie = 0 A; f = 1 MHz Conditions VCB = 50 V; IE = 0 A VCE = 30 V; IB = 0 A VCE = 30 V; IB = 0 A; Tj = 150 °C VEB = 5 V; IC = 0 A VCE = 5 V; IC = 5 mA IC = 10 mA; IB = 0.5 mA IC = 100 µA; VCE = 5 V IC = 20 mA; VCE = 300 mV Min 35 2.5 0.7 8 Typ 1 10 Max 100 1 50 800 150 300 1.3 12 pF mV mV V k Unit nA µA µA µA
IEBO hFE VCEsat Vi(off) Vi(on) R1
R2/ R1
Cc
9397 750 12553
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 -- 5 March 2004
3 of 7
Others parts begin by pd
PD-1 PD-2 PD-3 PD-4 PD-5 PD-6 PD-7 PD-8 PD-9 PD-10 PD-11 PD-12 PD-13 PD-14 PD-15 PD-16 PD-17 PD-18 PD-19 PD-20
|
|
|
