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Part: PDTB114ET
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> PNP
-> SOT/Surface Mount
Description: PNP Resistor-equipped Transistor
Company: Philips Semiconductors
Datasheet: Download PDTB114ET datasheet File size : 77 kB
Request For quote: Find where to buy PDTB114ET
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
PDTB114ET PNP resistor-equipped transistor
Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 1997 Sep 02
Philips Semiconductors
Objective specification
PNP resistor-equipped transistor
FEATURES · Built-in bias resistors R1 and R2 (typ. 10 k each) · Simplification of circuit design · Reduces number of components and board space. APPLICATIONS · Especially suitable for space reduction in interface and driver circuits · Inverter circuit configurations without use of external resistors.
handbook, 4 columns
PDTB114ET
3 3 R1 1 R2 2 1 2
MAM100
Top view
Fig.1 Simplified outline (SOT23) and symbol. DESCRIPTION PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTD114ET.
1 3 2
MARKING TYPE NUMBER PDTB114ET MARKING CODE p09
PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output
MGA893 - 1
Fig.2
Equivalent inverter symbol.
QUICK REFERENCE DATA SYMBOL VC E O IO IC M Pt o t hFE R1 R2 ------R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb 25 °C IC = -50 mA; VCE = -5 V CONDITIONS open base - - - - 56 7 0.8 MIN. - - - - - 10 1 TYP. MAX. -50 -500 -500 250 - 13 1.2 k UNIT V mA mA mW
1997 Sep 02
2
Philips Semiconductors
Objective specification
PNP resistor-equipped transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VC B O VC E O VE B O VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO IC M Pt o t Ts t g Tj Ta m b Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 - - - - - -65 - -65 CONDITIONS open emitter open base open collector - - - MIN.
PDTB114ET
MAX. -50 -50 -10 +10 -40 -500 -500 250 +150 150 +150 V V V V V
UNIT
mA mA mW °C °C °C
VALUE 500
UNIT K/W
1997 Sep 02
3
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