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Part: J108
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
-> Small signal
Description: J108; J109; J110; N-channel Silicon Junction FETs;; Package: SOT54 (SPT, E-1)
Company: Philips Semiconductors
Datasheet: Download J108 datasheet File size : 27 kB
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
J108; J109; J110 N-channel silicon junction FETs
Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30
Philips Semiconductors
Product specification
N-channel silicon junction FETs
FEATURES · High speed switching · Interchangeability of drain and source connections · Low RDSon at zero gate voltage (<8 for J108). APPLICATIONS · Analog switches · Choppers and commutators. DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a TO-92 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL VDS VGSoff PARAMETER drain-source voltage gate-source cut-off voltage J108 J109 J110 IDSS drain current J108 J109 J110 Ptot total power dissipation up to Tamb = 50 °C VGS = 0; VDS = 5 V ID = 1 µA; VDS = 5 V CONDITIONS
handbook, halfpage 2
J108; J109; J110
PINNING - TO-92 PIN 1 2 3 SYMBOL g s d gate source drain DESCRIPTION
1
3 g
MAM197
d s
Fig.1 Simplified outline and symbol.
MIN. - -3 -2 -0.5 80 40 10 -
MAX. ±25 -10 -6 -4 - - - 400
UNIT V V V V mA mA mA mW
1996 Jul 30
2
Philips Semiconductors
Product specification
N-channel silicon junction FETs
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGSO VGDO IG Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage gate-drain voltage forward gate current (DC) total power dissipation storage temperature operating junction temperature up to Tamb = 50 °C open drain open source CONDITIONS - - - - -
J108; J109; J110
MIN.
MAX. ±25 -25 -25 50 400 150 150 V V V
UNIT
mA mW °C °C
-65 -
THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient VALUE 250 UNIT K/W
STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL V(BR)GSS VGSoff PARAMETER gate-source breakdown voltage gate-source cut-off voltage J108 J109 J110 IDSS drain current J108 J109 J110 IGSS IDSX RDSon gate leakage current drain-source cut-off current drain-source on-state resistance J108 J109 J110 VGS = -15 V; VDS = 0 VGS = -10 V; VDS = 5 V VGS = 0; VDS = 100 mV - - - - - - 8 12 18 VGS = 0; VDS = 15 V 80 40 10 - - - - - - - - - - -3 3 mA mA mA nA nA CONDITIONS IG = -1 µA; VDS = 0 ID = 1 µA; VDS = 5 V -3 -2 -0.5 - - - -10 -6 -4 - MIN. - TYP. MAX. -25 V V V V V UNIT
1996 Jul 30
3
Others parts begin by j1
J1-1
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