|
|
Part: M1MA142WKT1
Category:
Discrete
-> Diodes & Rectifiers
-> Schottky Diodes
Description: D/common Cathode Switching Diode , Package: SC-70 (SOT-323), Pins=3
Company: ON Semiconductor
Datasheet: Download M1MA142WKT1 datasheet File size : 142 kB
Request For quote: Find where to buy M1MA142WKT1
Datasheet text preview:
M1MA141WKT1, M1MA142WKT1
Preferred Device
Common Cathode Silicon Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC70 package which is designed for low power surface mount applications. · Fast trr, < 3.0 ns · Low CD, < 2.0 pF · Available in 8 mm Tape and Reel Use M1MA141/2WKT1 to order the 7 inch/3000 unit reel.
MAXIMUM RATINGS (TA = 25°C)
Rating Reverse Voltage g M1MA141WKT1 M1MA142WKT1 Peak Reverse Voltage g M1MA141WKT1 M1MA142WKT1 Forward Current Single Dual Peak Forward Current Single Dual Peak Forward Surge g Current Single Dual IFSM (Note 1) 1) IFM IF VRM Symbol VR Value 40 80 40 80 100 150 225 340 500 750
Preferred devices are recommended choices for future use and best overall value.
http://onsemi.com
CATHODE 3
1 Unit Vdc
3
ANODE
2
MARKING DIAGRAM
Vdc
1 2
mAdc
SC70/SOT323 Style 5 CASE 419 xx M
xxM
mAdc = Specific Device Code = Date Code
mAdc
THERMAL CHARACTERISTICS
Rating Power Dissipation Junction Temperature Storage Temperature 1. t = 1 SEC Symbol PD TJ Tstg Max 150 150 55 ~ +150 Unit mW °C °C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Reverse Voltage Leakage Current M1MA141WKT1 M1MA142WKT1 Forward Voltage Reverse Breakdown Voltage M1MA141WKT1 M1MA142WKT1 Diode Capacitance Reverse Recovery Time (Figure 1) 2. trr Test Circuit CD trr (Note 2) VR = 0, f = 1.0 MHz IF = 10 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR VF VR Symbol IR Condition VR = 35 V VR = 75 V IF = 100 mA IR = 100 mA Min 40 80 Max 0.1 0.1 1.2 2.0 3.0 pF ns Vdc Vdc Unit mAdc
© Semiconductor Components Industries, LLC, 2002
1
July, 2002 Rev. 5
Publication Order Number: M1MA141WKT1/D
M1MA141WKT1, M1MA142WKT1
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE
tr tp t A RL 10% Irr = 0.1 IR 90% VR tp = 2 ms tr = 0.35 ns IF = 10 mA VR = 6 V RL = 100 W IF
OUTPUT PULSE
trr t
Figure 1. Recovery Time Equivalent Test Circuit
100 IF, FORWARD CURRENT (mA) TA = 85°C 10 TA = -40°C IR , REVERSE CURRENT (µA)
10
TA = 150°C TA = 125°C
1.0
0.1
TA = 85°C TA = 55°C
1.0
TA = 25°C
0.01 TA = 25°C 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50
0.1
0.2
0.4
0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS)
1.2
0.001
Figure 2. Forward Voltage
Figure 3. Reverse Current
0.68 CD, DIODE CAPACITANCE (pF)
0.64
0.6
0.56
0.52
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Diode Capacitance
http://onsemi.com
2
M1MA141WKT1, M1MA142WKT1 INFORMATION FOR USING THE SC70/SOT323 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
0.025 0.65
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.025 0.65
0.075 1.9 0.035 0.9 0.028 0.7 inches mm
SC70/SOT323 POWER DISSIPATION The power dissipation of the SC70/SOT323 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RqJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows.
PD = TJ(max) TA RqJA
the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 200 milliwatts.
PD = 150°C 25°C 0.625°C/W = 200 milliwatts
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into
The 0.625°C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 200 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, a higher power dissipation of 300 milliwatts can be achieved using the same footprint.
SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. · Always preheat the device. · The delta temperature between the preheat and soldering should be 100°C or less.* · When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C.
· The soldering temperature and time should not exceed
260°C for more than 10 seconds. · When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less. · After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. · Mechanical stress or shock should not be applied during cooling
* Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
http://onsemi.com
3
Others parts begin by m1
|
|
|
