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Part: M1MA141WAT1
Category:
Discrete
-> Diodes & Rectifiers
-> Schottky Diodes
Description: D/common Anode Switching Diode , Package: SC-70 (SOT-323), Pins=3
Company: ON Semiconductor
Datasheet: Download M1MA141WAT1 datasheet File size : 142 kB
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Datasheet text preview:
M1MA141WAT1, M1MA142WAT1
Preferred Device
Common Anode Silicon Dual Switching Diode
This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC70 package which is designed for low power surface mount applications. · Fast trr, < 10 ns · Low CD, < 15 pF · Available in 8 mm Tape and Reel
MAXIMUM RATINGS (TA = 25°C)
Rating Reverse Voltage M1MA141WAT1 M1MA142WAT1 Peak Reverse Voltage M1MA141WAT1 M1MA142WAT1 Forward Current Single Dual Peak Forward Current Single Dual Peak Forward Surge Current Single Dual IFSM (Note 1) 1) IFM IF VRM Symbol VR Value 40 80 40 80 100 150 225 340 500 750 mAdc xx M = Specific Device Code = Date Code mAdc mAdc
1 2
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ANODE 3
Unit Vdc
1
CATHODE
2
Vdc
3
MARKING DIAGRAM
xxM
SC70 (SOT323) CASE 419 Style 4
THERMAL CHARACTERISTICS Rating Power Dissipation Junction Temperature Storage Temperature 1. t = 1 SEC Symbol PD TJ Tstg Max 150 150 55 ~ +150 Unit mW °C °C
ORDERING INFORMATION
Device M1MA141WAT1 M1MA142WAT1 Package SC70 SC70 Shipping 3000/Tape & Reel 3000/Tape & Reel
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2002
1
June, 2002 Rev. 5
Publication Order Number: M1MA141WAT1/D
M1MA141WAT1, M1MA142WAT1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Reverse Voltage Leakage Current M1MA141WAT1 M1MA142WAT1 Forward Voltage Reverse Breakdown Voltage M1MA141WAT1 M1MA142WAT1 Diode Capacitance Reverse Recovery Time (Figure 1) 2. trr Test Circuit CD trr (Note 2) VR = 0, f = 1.0 MHz IF = 10 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR VF VR Symbol IR Condition VR = 35 V VR = 75 V IF = 100 mA IR = 100 mA Min 40 80 Max 0.1 0.1 1.2 15 10 pF ns Vdc Vdc Unit mAdc
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2
M1MA141WAT1, M1MA142WAT1
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE
tr tp t A RL 10% Irr = 0.1 IR 90% VR tp = 2 ms tr = 0.35 ns IF = 10 mA VR = 6 V RL = 100 W IF
OUTPUT PULSE
trr t
Figure 1. Recovery Time Equivalent Test Circuit
100 IF, FORWARD CURRENT (mA) TA = 85°C 10 TA = -40°C IR , REVERSE CURRENT (µA)
10
TA = 150°C TA = 125°C
1.0
0.1
TA = 85°C TA = 55°C
1.0
TA = 25°C
0.01 TA = 25°C 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50
0.1
0.2
0.4
0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS)
1.2
0.001
Figure 2. Forward Voltage
Figure 3. Reverse Current
0.68 CD, DIODE CAPACITANCE (pF)
0.64
0.6
0.56
0.52
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Diode Capacitance
http://onsemi.com
3
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