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Part: M1MA141KT1
Category:
Discrete
-> Diodes & Rectifiers
-> Schottky Diodes
Description: Single Switching Diode , Package: SC-70 (SOT-323), Pins=3
Company: ON Semiconductor
Datasheet: Download M1MA141KT1 datasheet File size : 142 kB
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Datasheet text preview:
ON Semiconductort
Single Silicon Switching Diode
This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC70 package which is designed for low power surface mount applications. · Fast trr, < 3.0 ns · Low CD, < 2.0 pF · Available in 8 mm Tape and Reel Use M1MA141/2KT1 to order the 7 inch/3000 unit reel. Use M1MA141/2KT3 to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C)
Rating Reverse Voltage M1MA141KT1 M1MA142KT1 Peak Reverse Voltage M1MA141KT1 M1MA142KT1 Forward Current Peak Forward Current Peak Forward Surge Current IF IFM IFSM(1) VRM Symbol VR Value 40 80 40 80 100 225 500 mAdc mAdc mAdc Vdc Unit Vdc
M1MA141KT1 M1MA142KT1
ON Semiconductor Preferred Devices
3
1 2
CASE 41904, STYLE 2 SC70/SOT323
CATHODE 3
THERMAL CHARACTERISTICS
Rating Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 150 150 55 ~ +150 Unit mW °C °C
ANODE NO CONNECTION 1 2
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Reverse Voltage Leakage Current M1MA141KT1 M1MA142KT1 Forward Voltage Reverse Breakdown Voltage M1MA141KT1 M1MA142KT1 Diode Capacitance Reverse Recovery Time (Figure 1) 1. t = 1 SEC 2. trr Test Circuit CD trr(2) VR = 0, f = 1.0 MHz IF = 10 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR VF VR Symbol IR Condition VR = 35 V VR = 75 V IF = 100 mA IR = 100 µA Min -- -- -- 40 80 -- -- Max 0.1 0.1 1.2 -- -- 2.0 3.0 pF ns Vdc Vdc Unit µAdc
DEVICE MARKING -- EXAMPLE
Marking Symbol
Type No. Symbol 141K MH 142K MI
MHX
1 Publication Order Number: M1MA141KT1/D
The "X" represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
© Semiconductor Components Industries, LLC, 2001
November, 2001 Rev. 4
M1MA141KT1 M1MA142KT1
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE
tr tp t A RL 10% Irr = 0.1 IR 90% VR tp = 2 µs tr = 0.35 ns IF = 10 mA VR = 6 V RL = 100 IF
OUTPUT PULSE
trr t
Figure 1. Recovery Time Equivalent Test Circuit
100 IF, FORWARD CURRENT (mA) TA = 85°C 10 TA = -40°C IR , REVERSE CURRENT (µA) 10
TA = 150°C TA = 125°C
1.0
0.1
TA = 85°C TA = 55°C
1.0
TA = 25°C
0.01 TA = 25°C 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50
0.1
0.2
0.4
0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS)
1.2
0.001
Figure 2. Forward Voltage
Figure 3. Reverse Current
0.68 CD, DIODE CAPACITANCE (pF)
0.64
0.6
0.56
0.52
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Diode Capacitance
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M1MA141KT1 M1MA142KT1 INFORMATION FOR USING THE SC70/SOT323 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
0.025 0.65
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.025 0.65
0.075 1.9 0.035 0.9 0.028 0.7 inches mm
SC70/SOT323 POWER DISSIPATION The power dissipation of the SC70/SOT323 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows.
PD = TJ(max) TA R J A
the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 200 milliwatts.
PD = 150°C 25°C 0.625°C/W = 200 milliwatts
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into
The 0.625°C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 200 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, a higher power dissipation of 300 milliwatts can be achieved using the same footprint.
SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. · Always preheat the device. · The delta temperature between the preheat and soldering should be 100°C or less.* · When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C. 260°C for more than 10 seconds. · When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less. · After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. · Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
· The soldering temperature and time should not exceed
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