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Part: IRF540
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> N-Channel
Description: N-channel Enhancement-mode Silicon Gate
Company: ON Semiconductor
Datasheet: Download IRF540 datasheet File size : 182 kB
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Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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TMOS E-FET.TM Power Field Effect Transistor
NChannel EnhancementMode Silicon Gate
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching a p p l i c a t i o n s in power supplies, converters, and PWM motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients. · Avalanche Energy Specified · SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode · Diode is Characterized for Use in Bridge Circuits · IDSS and VDS(on) Specified at Elevated Temperature
D
IRF540
TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.070 OHMS
®
G S
CASE 221A09 TO-220AB
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DraintoSource Voltage DraintoGate Voltage (RGS = 1.0 M) GatetoSource Voltage -- Continuous GatetoSource Voltage -- Nonrepetitive (tp 10 ms) Drain Current -- Continuous Drain Current -- Continuous @ 100°C Drain Current -- Single Pulse (tp 10 ms) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy -- STARTING TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, PEAK IL = 27 Apk, L = 1.0 mH, RG = 25 W) Thermal Resistance -- JunctiontoCase° Thermal Resistance -- JunctiontoAmbient° Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds EFET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS RJC RJA TL Value 100 100 ± 20 ± 40 27 19 95 145 1.16 55 to 150 365 0.86 62.5 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C mJ °C/W °C
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
REV 3
© Motorola TMOS Motorola, Inc. 1998
Power MOSFET Transistor Device Data
1
IRF540
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 100 Vdc, VGS = 0 Vdc) (VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C) GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 15 Adc) DraintoSource OnVoltage (VGS = 10 Vdc, ID = 27 Adc) (VGS = 10 Vdc, ID = 15 Adc, TJ = 125°C) Forward Transconductance (VDS = 15 Vdc, ID = 15 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 8) (VDS = 80 Vd , ID = 27 Adc, 80 Vdc, 27 Ad , VGS = 10 Vdc) (VDD = 30 Vd , ID = 15 Adc, 30 Vdc, 15 Ad , VGS = 10 Vdc, RG = 4.7 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (IS = 27 Adc, VGS = 0 Vdc) (IS = 27 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS = 27 Adc, VGS = 0 Vdc, 27 Ad , Vd , dIS/dt = 100 A/µs) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. ax limit Typ (3) Reflects typical values. Cpk 3 sigma Ld -- -- Ls -- 7.5 -- 3.5 4.5 -- -- nH VSD -- -- trr ta tb Q RR -- -- -- -- 0.93 0.84 110 100 10 0.67 2.4 -- -- -- -- -- ns Vdc -- -- -- -- -- -- -- -- 11.6 50 26 19 50 9.0 26 20 30 60 80 30 60 -- -- -- nC ns (VDS = 25 Vdc, VGS = 0 Vdc, 25 Vdc Vdc f = 1.0 MHz) Ciss Coss Cr s s -- -- -- 1460 390 120 1600 800 300 pF Cpk 2.0(3) VGS(th) 2.0 -- Cpk 2.0(3) RDS(on) -- VDS(on) -- -- gFS 6.0 -- -- 15 1.9 1.8 -- Mhos 0.047 0.070 Vdc 2.9 6.8 4.0 -- Vdc mV/°C Ohms V(BR)DSS 100 -- IDSS -- -- IGSS -- -- 100 -- -- 10 100 nAdc -- 116 -- -- Vdc mV/°C Symbol Min Typ Max Unit
mAdc
mC
+
M
2
Motorola TMOS Power MOSFET Transistor Device Data
IRF540
TYPICAL ELECTRICAL CHARACTERISTICS
55 50 I D, DRAIN CURRENT (AMPS) 45 40 35 30 25 20 15 10 5 0 0 1 3 5 7 4 6 8 VDS, DRAINTOSOURCE VOLTAGE (VOLTS) 2 9 10 5V 6V TJ = 25°C 8V VGS = 10 V 9V 7V ID, DRAIN CURRENT (AMPS) 60 VDS 10 V 50 40 30 20 10 0 2 3 4 5 6 7 VGS, GATETOSOURCE VOLTAGE (VOLTS) 8 TJ = 55°C 25°C 100°C
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
R DS(on), DRAINTOSOURCE RESISTANCE (OHMS)
RDS(on), DRAINTOSOURCE RESISTANCE (OHMS)
0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0 5 10 15 20 25 30 35 40 ID, DRAIN CURRENT (AMPS) 45 50 55 55°C 25°C VGS = 10 V TJ = 100°C
0.060 TJ = 25°C 0.055 VGS = 10 V 0.050 15 V 0.045 0.040 0.035 0.030 0 5 10 15 20 25 30 35 40 45 50 55 ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current and Temperature
Figure 4. OnResistance versus Drain Current and Gate Voltage
2.0 RDS(on) , DRAINTOSOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 50 25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) IDSS, LEAKAGE (nA) VGS = 10 V ID = 15 A
1000 VGS = 0 V TJ = 125°C
100°C 100
10 0 10 20 30 40 50 60 70 80 90 100 110 VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 5. OnResistance Variation with Temperature
Figure 6. DraintoSource Leakage Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
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