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Part: 1.5KE9.1A
Category:
Discrete
-> TVS (Transient Transient Voltage Suppressors)
Description: Zener 9.1V 1500W 5% , Package: MOSorb, Pins=2
Company: ON Semiconductor
Datasheet: Download 1.5KE9.1A datasheet File size : 568 kB
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Datasheet text preview:
1N6267A Series 1500 Watt MosorbTM Zener Transient Voltage Suppressors
Unidirectional*
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M o s o r b devices are designed to protect voltage sensitive components from high voltage, highenergy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ON Semiconductor 's exclusive, cost-effective, highly reliable SurmeticTM axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect CMOS, MOS and Bipolar integrated circuits.
Specification Features:
Cathode
Anode
· · · · · · ·
Working Peak Reverse Voltage Range 5.8 V to 214 V Peak Power 1500 Watts @ 1 ms ESD Rating of Class 3 (>16 KV) per Human Body Model Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5 mA Above 10 V UL 497B for Isolated Loop Circuit Protection Response Time is Typically < 1 ns
AXIAL LEAD CASE 41A PLASTIC
L 1N6 xxxA 1.5KE xxxA YYWW L = Assembly Location 1N6xxxA = JEDEC Device Code 1.5KExxxA = ON Device Code YY = Year WW = Work Week
Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16 from the case for 10 seconds POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating Peak Power Dissipation (Note 1) @ TL 25°C Steady State Power Dissipation @ TL 75°C, Lead Length = 3/8 Derated above TL = 75°C Thermal Resistance, JunctiontoLead Forward Surge Current (Note 2) @ TA = 25°C Operating and Storage Temperature Range Symbol PPK PD Value 1500 5.0 20 Rq J L IFSM TJ, Tstg 20 200 65 to +175 Unit Watts Watts mW/°C °C/W Amps °C
ORDERING INFORMATION
Device 1.5KExxxA 1.5KExxxARL4 1N6xxxA 1N6xxxARL4* Package Axial Lead Axial Lead Axial Lead Axial Lead Shipping 500 Units/Box 1500/Tape & Reel 500 Units/Box 1500/Tape & Reel
*1N6302A Not Available in 1500/Tape & Reel
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25°C per Figure 2. 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. *Please see 1.5KE6.8CA to 1.5KE250CA for Bidirectional Devices
© Semiconductor Components Industries, LLC, 2002
1
June, 2002 Rev. 5
Publication Order Number: 1N6267A/D
1N6267A Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 3.5 V Max., IF (Note 3) = 100 A) Symbol IPP VC VRWM IR VBR IT QVBR IF VF Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Temperature Coefficient of VBR Forward Current Forward Voltage @ IF IPP VC VBR VRWM IR VF IT V IF I
UniDirectional TVS
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1N6267A Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3) = 100 A)
JEDEC Device (Note 4) VRWM (Note 5) (Volts) Breakdown Voltage IR @ VRWM (mA) VBR (Note 6) (Volts) Min Nom Max @ IT (mA) VC @ IPP (Note 7) VC (Volts) IPP (A) QVBR (%/°C)
Device
1.5KE6.8A 1.5KE7.5A 1.5KE8.2A 1.5KE9.1A
1.5KE10A 1.5KE11A 1.5KE12A 1.5KE13A
1N6267A 1N6268A 1N6269A 1N6270A
1N6271A 1N6272A 1N6273A 1N6274A
5.8 6.4 7.02 7.78
8.55 9.4 10.2 11.1
1000 500 200 50
10 5 5 5
6.45 7.13 7.79 8.65
9.5 10.5 11.4 12.4
6.8 7.5 8.2 9.1
10 11 12 13
7.14 7.88 8.61 9.55
10.5 11.6 12.6 13.7
10 10 10 1
1 1 1 1
10.5 11.3 12.1 13.4
14.5 15.6 16.7 18.2
143 132 124 112
103 96 90 82
0.057 0.061 0.065 0.068
0.073 0.075 0.078 0.081
1.5KE15A 1.5KE16A 1.5KE18A 1.5KE20A 1.5KE22A 1.5KE24A 1.5KE27A 1.5KE30A 1.5KE33A 1.5KE36A 1.5KE39A 1.5KE43A
1.5KE47A 1.5KE51A 1.5KE56A 1.5KE62A 1.5KE68A 1.5KE75A 1.5KE82A 1.5KE91A 1.5KE100A 1.5KE110A 1.5KE120A 1.5KE130A 1.5KE150A 1.5KE160A 1.5KE170A 1.5KE180A 1.5KE200A 1.5KE220A 1.5KE250A
1N6275A 1N6276A 1N6277A 1N6278A
1N6279A 1N6280A 1N6281A 1N6282A
12.8 13.6 15.3 17.1 18.8 20.5 23.1 25.6 28.2 30.8 33.3 36.8
40.2 43.6 47.8 53 58.1 64.1 70.1 77.8 85.5 94 102 111 128 136 145 154 171 185 214
5 5 5 5 5 5 5 5 5 5 5 5
5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5
14.3 15.2 17.1 19 20.9 22.8 25.7 28.5 31.4 34.2 37.1 40.9
44.7 48.5 53.2 58.9 64.6 71.3 77.9 86.5 95 105 114 124 143 152 162 171 190 209 237
15 16 18 20 22 24 27 30 33 36 39 43
47 51 56 62 68 75 82 91 100 110 120 130 150 160 170 180 200 220 250
15.8 16.8 18.9 21 23.1 25.2 28.4 31.5 34.7 37.8 41 45.2
49.4 53.6 58.8 65.1 71.4 78.8 86.1 95.5 105 116 126 137 158 168 179 189 210 231 263
1 1 1 1 1 1 1 1 1 1 1 1
1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1
21.2 22.5 25.2 27.7 30.6 33.2 37.5 41.4 45.7 49.9 53.9 59.3
64.8 70.1 77 85 92 103 113 125 137 152 165 179 207 219 234 246 274 328 344
71 67 59.5 54 49 45 40 36 33 30 28 25.3
23.2 21.4 19.5 17.7 16.3 14.6 13.3 12 11 9.9 9.1 8.4 7.2 6.8 6.4 6.1 5.5 4.6 5
0.084 0.086 0.088 0.09 0.092 0.094 0.096 0.097 0.098 0.099 0.1 0.101
0.101 0.102 0.103 0.104 0.104 0.105 0.105 0.106 0.106 0.107 0.107 0.107 0.108 0.108 0.108 0.108 0.108 0.109 0.109
1N6283A 1N6284A 1N6285A 1N6286A
1N6287A 1N6288A 1N6289 1N6290A 1N6291A 1N6292A 1N6293A 1N6294A 1N6295A 1N6296A 1N6297A 1N6298A 1N6299A 1N6300A 1N6301A 1N6302A* 1N6303A
3. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. 4. Indicates JEDEC registered data 5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or greater than the dc or continuous peak operating voltage level. 6. VBR measured at pulse test current IT at an ambient temperature of 25°C 7. Surge current waveform per Figure 5 and derate per Figures 1 and 2. *Not Available in the 1500/Tape & Reel
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1N6267A Series
PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25°C 100 NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 5
PPK , PEAK POWER (kW)
100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C)
10
1
0.1 ms
1 ms
10 ms
100 ms
1 ms
10 ms
tP, PULSE WIDTH
Figure 1. Pulse Rating Curve
Figure 2. Pulse Derating Curve
1N6373, ICTE-5, MPTE-5, through 1N6389, ICTE-45, C, MPTE-45, C
10,000 MEASURED @ ZERO BIAS 10,000
1N6267A/1.5KE6.8A through 1N6303A/1.5KE200A
MEASURED @ ZERO BIAS C, CAPACITANCE (pF) 1000
C, CAPACITANCE (pF)
1000 MEASURED @ VRWM 100
MEASURED @ VRWM 100
10
1
10
100
1000
10
1
10
100
1000
VBR, BREAKDOWN VOLTAGE (VOLTS)
VBR, BREAKDOWN VOLTAGE (VOLTS)
Figure 3. Capacitance versus Breakdown Voltage
PD , STEADY STATE POWER DISSIPATION (WATTS)
3/8 IPP, VALUE (%) 5 4 3 2 1 0 0 25 50 75 100 125 150 175 TL, LEAD TEMPERATURE (°C) 200 0 0 3/8 100
tr PEAK VALUE - IPP
PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. tr 10 ms
HALF VALUE 50 tP 1 2
IPP 2
3
4
t, TIME (ms)
Figure 4. Steady State Power Derating
Figure 5. Pulse Waveform
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1N6267A Series
1N6373, ICTE-5, MPTE-5, through 1N6389, ICTE-45, C, MPTE-45, C
1000 500 IT , TEST CURRENT (AMPS) 200 100 50 20 10 5 2 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 DVBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS) TL = 25°C tP = 10 ms VBR(NOM) = 6.8 to 13 V 20 V 43 V 24 V 1000 500 IT , TEST CURRENT (AMPS) 200 100 50 20 10 5 2 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 DVBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS) 180 V 120 V TL = 25°C tP = 10 ms
1.5KE6.8CA through 1.5KE200CA
VBR(NOM) = 6.8 to 13 V 20 V 24 V 43 V 75 V
Figure 6. Dynamic Impedance
1 0.7 0.5 0.3 DERATING FACTOR 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 10 ms 0.2 0.5 1 2 5 10 D, DUTY CYCLE (%) 20 50 100 PULSE WIDTH 10 ms
1 ms 100 ms
Figure 7. Typical Derating Factor for Duty Cycle
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitance effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 8. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 9. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. These devices have excellent response time, typically in the picosecond range and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Zin is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions and at a lead temperature of 25°C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 7. Average power must be derated as the lead or
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