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Part: EE-SM3B

Category:
 Optoelectronics
   -> Photosensors
             -> Photomicrosensor

Description: EE-SM3B Non-amplified Photomicrosensordata Sheet

Company: Omron Corporation

Datasheet: Download EE-SM3B datasheet     File size : 42 kB

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Datasheet text preview:
EE-SM3B
Dimensions
Note: All units are in millimeters unless otherwise indicated.
Two, 3.2 dia. holes Two, C1.7

Photomicrosensor
Features
· General-purpose model with a 3-mm-wide slot. · PCB mounting type. · With a red LED as an emitter element and a

(Transmissive)

Photo-Darlington transistor as a detector element.

19±0.15

Absolute Maximum Ratings (Ta = 25°C)
Item Symbol IF IF P VR VCEO VECO IC PC Topr Tstg Tsol Rated value 15 mA (see note 1) --4V 24 V --20 mA 75 mW (see note 1) -- 20°C to 60°C -- 20°C to 80°C 260°C (see note 2) Emitter Forward current Pulse forward current Reverse voltage Detector Collector- Emitter voltage Emitter- Collector voltage Collector current

7.2±0.2

6 min. 6.5±0.2 Cross section BB

Four, 0.45

Four, 0.45 2.54±0.2 Cross section AA

Internal Circuit
K C

Collector dissipation Unless otherwise specified, the tolerances are as shown below. Dimensions 3 mm max. 3 < mm 6 6 < mm 10 10 < mm 18 18 < mm 30 Tolerance ± 0.3 ±0.375 ±0.45 ±0.55 ±0.65 Ambient temperature Operating Storage Soldering temperature Note:

A

E

Terminal No. A K C E

Name Anode Cathode Collector Emitter

1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. Complete soldering within 10 seconds.

Ordering Information
Description Photomicrosensor (Transmissive) EE-SM3B Part number

Electrical and Optical Characteristics (Ta = 25°C)
Item Emitter Forward voltage Reverse current Peak emission wavelength Detector Light current Dark current Leakage current Collector - Emitter saturated voltage Peak spectral sensitivity wavelength Rising time Falling t ime IR P IL ID ILEAK VCE (sat) P tr tf Symbol VF Value 2.0 V typ., 2.6 V max. 0.01 µA typ., 5 µA max. 700 nm typ. 1.5 m A m in., 120 mA max. 2 nA typ., 250 nA max. --0.9 V typ. 800 nm typ. 180 µs typ. 60 µs typ. IF = 15 mA VR = 4 V IF = 3 mA IF = 3 mA, VCE = 10 V VCE = 10 V, 0 x --IF = 3 mA, IL = 0.5 mA VCE = 10 V VCC = 5 V, RL = 100 , IL = 10 mA VCC = 5 V, RL = 100 , IL = 10 mA Condition

EE-SM3B Engineering Data
Forward Current vs. Collector Dissipation Temperature Rating
Collector dissipation Pc (mW)

EE-SM3B

Forward Current vs. Forward Voltage Characteristics (Typical)
Ta = 25°C

Light Current vs. Forward Current Characteristics (Typical)
Ta = 25°C VCE = 10 V

Forward current I F (mA)

Forward current I F (mA)

Pc IF

Ambient temperature Ta (°C)

Forward voltage VF (V)

Light current I L (mA)

Forward current IF (mA)

Light Current vs. Collector - Emitter Voltage Characteristics (Typical)
Ta = 25°C

Relative Light Current vs. Ambient Temperature Characteristics (Typical)
Relative light current IL (%)
IF = 3 mA VCE = 10 V

Dark Current vs. Ambient Temperature Characteristics (Typical)
VCE = 10 V 0 x

Light current I L (mA)

IF = 7 mA IF = 5 mA

IF = 3 mA IF = 2 mA IF = 1 mA

Collector -- Emitter voltage VCE (V)

Ambient temperature Ta (°C)

Dark current I D (nA)

IF =10 mA

Ambient temperature Ta (°C)

Response Time vs. Load Resistance Characteristics (Typical)
VCC = 5 V Ta = 25°C

Sensing Position Characteristics (Typical)
I F = 3 mA VCE = 10 V Ta = 25°C Center of optical axis

Response Time Measurement Circuit
Input Output 90 % 10 %

Relative light current IL (%)

Response time tr, tf (µ s)

Input

Output

Load resistance RL (k)

Distance d (mm)

NOTE: DIMENSIONS SHOWN ARE IN MILLIMETERS. To convert millimeters to inches divide by 25.4.

R

OMRON ELECTRONICS LLC
One East Commerce Drive Schaumburg, IL 60173

OMRON CANADA, INC.
885 Milner Avenue Toronto, Ontario M1B 5V8

OMRON ON­LINE
Global ­ http://www.omron.com USA ­ http://www.omron.com/oei Canada ­ http://www.omron.com/oci Printed in U.S.A.

847­882­2288
Cat. No. GC NAPMS­1 02/03

416-286-6465
Specifications subject to change without notice.




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