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Part: EE-SJ3W-B
Category:
Optoelectronics
-> Photosensors
-> Photomicrosensor
Description: EE-SJ3W-B Non-amplified Photomicrosensordata Sheet
Company: Omron Corporation
Datasheet: Download EE-SJ3W-B datasheet File size : 42 kB
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Datasheet text preview:
EE-SJ3W-B
Dimensions
Note: All units are in millimeters unless otherwise indicated.
Photomicrosensor
Features
· General-purpose model with a 3-mm-wide slot. · PCB mounting type. · With a red LED as an emitter element and a
(Transmissive)
Photo-Darlington transistor as a detector element.
Absolute Maximum Ratings (Ta = 25°C)
Item
7.2±0.2
Symbol IF IF P VR VCEO VECO IC PC Topr Tstg Tsol
Rated value 15 mA (see note 1) --4V 24 V --20 mA 75 mW (see note 1) -- 20°C to 60°C -- 20°C to 80°C 260°C (see note 3)
Emitter
Four, 0.45 6.5±0.2 Four, 0.45 2.54±0.2 Cross section AA
Forward current Pulse forward current Reverse voltage
6 min.
Cross section BB
Detector
Collector- Emitter voltage Emitter- Collector voltage
Internal Circuit
K C
Collector current Collector dissipation Unless otherwise specified, the tolerances are as shown below. Dimensions 3 mm max. 3 < mm 6 6 < mm 10 10 < mm 18 18 < mm 30 Tolerance ± 0.3 ±0.375 ±0.45 ±0.55 ±0.65 Note: Ambient temperature Operating Storage Soldering temperature
A
E
Terminal No. A K C E
Name Anode Cathode Collector Emitter
1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 µs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds.
Ordering Information
Description Photomicrosensor (Transmissive) Part number EE-SJ3W-B
Electrical and Optical Characteristics (Ta = 25°C)
Item Emitter Forward voltage Reverse current Peak emission wavelength Detector Light current Dark current Leakage current Collector - Emitter saturated voltage Peak spectral sensitivity wavelength Rising time Falling t ime IR P IL ID ILEAK VCE (sat) P tr tf Symbol VF Value 2.0 V typ., 2.6 V max. 0.01 µA typ., 5 µA max. 700 nm typ. 1.5 m A m in., 120 mA max. 20 nA typ., 250 nA max. --0.9 V typ. 800 nm typ. 180 µs typ. 60 µs typ. IF = 15 mA VR = 4 V IF = 3 mA IF = 3 mA, VCE = 10 V VCE = 10 V, 0 x --IF = 3 mA, IL = 0.5 mA VCE = 10 V VCC = 5 V, RL = 100 , IL = 10 mA VCC = 5 V, RL = 100 , IL = 10 mA Condition
EE-SJ3W-B Engineering Data
Forward Current vs. Collector Dissipation Temperature Rating
Collector dissipation Pc (mW)
EE-SJ3W-B
Forward Current vs. Forward Voltage Characteristics (Typical)
Ta = 25°C
Light Current vs. Forward Current Characteristics (Typical)
Ta = 25°C VCE = 10 V
Forward current I F (mA)
Forward current I F (mA)
Pc IF
Ambient temperature Ta (°C)
Forward voltage VF (V)
Light current I L (mA)
Forward current IF (mA)
Light Current vs. Collector - Emitter Voltage Characteristics (Typical)
Ta = 25°C
Relative Light Current vs. Ambient Temperature Characteristics (Typical)
IF = 3 mA VCE = 10 V
Dark Current vs. Ambient Temperature Characteristics (Typical)
VCE = 10 V 0 x
Relative light current IL (%)
IF =10 mA
Light current I L (mA)
I F = 7 mA I F = 5 mA
I F = 3 mA I F = 2 mA I F = 1 mA
Collector -- Emitter voltage VCE (V)
Ambient temperature Ta (°C)
Dark current I D (nA)
Ambient temperature Ta (°C)
Response Time vs. Load Resistance Characteristics (Typical)
V CC = 5 V Ta = 25°C
Sensing Position Characteristics (Typical)
I F =3 mA VCE = 10 V Ta = 25°C Center of optical axis
Response Time Measurement Circuit
Input Output 90 % 10 %
Relative light current IL (%)
Response time tr, tf ( s) µ
Input
Output
Load resistance RL (k)
Distance d (mm)
NOTE: DIMENSIONS SHOWN ARE IN MILLIMETERS. To convert millimeters to inches divide by 25.4.
R
OMRON ELECTRONICS LLC
One East Commerce Drive Schaumburg, IL 60173
OMRON CANADA, INC.
885 Milner Avenue Toronto, Ontario M1B 5V8
OMRON ONLINE
Global http://www.omron.com USA http://www.omron.com/oei Canada http://www.omron.com/oci Printed in U.S.A.
8478822288
Cat. No. GC NAPMS1 02/03
416-286-6465
Specifications subject to change without notice.
Others parts begin by ee
EE-1 EE-2 EE-3
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