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Part: EE-SJ3-D

Category:
 Optoelectronics
   -> Photosensors
             -> Photomicrosensor

Description: EE-SJ3 Series Non-amplified Photomicrosensordata Sheet

Company: Omron Corporation

Datasheet: Download EE-SJ3-D datasheet     File size : 42 kB

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Datasheet text preview:
EE-SJ3 Series
Dimensions
Note: All units are in millimeters unless otherwise indicated.
0.3 Center mark 6.2

Photomicrosensor
Features
· High-resolution model with a 0.2-mm-wide sensing

(Transmissive)

aperture, high-sensitivity model with a 1-mm-wide sensing aperture, and model with a horizontal sensing aperture are available.

· All models have a 3 mm wide slot.

0.2

Absolute Maximum Ratings (Ta = 25°C)
Item Emitter Forward current Pulse f orward current Reverse voltage Symbol IF IFP VR VCEO VECO IC PC Topr Tstg Tsol Rated value 50 mA (see note 1) 1A (see note 2) 4V 30 V --20 mA 100 mW (see note 1) -- 25°C to 85°C -- 30°C to 100°C 260°C (see note 3)

7.2 ± 0.2

10.2

6 Four, 0.25 Cross section BB 7.6±0.3

Four, 0.5

Detector

Collector - Emitter voltage Emitter - Collector voltage Collector c urrent Collector dissipation

2.54±0.2 Cross section AA

Model EE-SJ3-C Internal Circuit
K C

Aperture (a x b) 2.1 x 1.0 2.1 x 0.2 0.5 x 2.1

Ambient temperature

Operating Storage

EE-SJ3-D EE-SJ3-G

Soldering temperature

Unless otherwise specified, the tolerances are as shown below.
A E

Note:

Dimensions 3 mm max.

Tolerance ±0.3 ±0.375 ±0.45 ±0.55 ±0.65

1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 µs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds.

Terminal No. A K C E

Name Anode Cathode Collector Emitter

3 < mm 6 6 < mm 10 10 < mm 18 18 < mm 30

Ordering Information
Description Photomicrosensor (Transmissive) Part number EE-SJ3-C EE-SJ3-D EE-SJ3-G

Electrical and Optical Characteristics (Ta = 25°C)
Item Emitter Forward voltage Reverse current Peak emission wavelength Detector Light current Dark current Leakage c urrent Collector - Emitter saturated voltage Peak spectral sensitivity wavelength Rising time Falling t ime Symbol EE-SJ3-C VF IR P IL ID ILEAK VCE (sat) P tr tf 1.2 V typ., 1.5 V max. 0.01 µA typ., 10 µA max. 940 nm typ. 1 to 28 mA typ. 2 n A ty p . , 2 0 0 n A m a x . --0.1 V typ., 0.4 V max. 850 nm typ. 4 µ s ty p . 4 µ s ty p . --0.1 V typ., 0.4 V max. 0.1 mA min. 0.5 to 14 mA Value EE-SJ3-D EE-SJ3-G IF = 30 mA VR = 4 V IF = 20 mA IF = 20 mA, VCE = 10 V VCE = 10 V, 0 x --IF = 20 mA, IL = 0.1 mA VCE = 10 V VCC = 5 V, RL = 100 , IL = 5 mA Condition

EE-SJ3 Series Engineering Data
Forward Current vs. Collector Dissipation Temperature Rating
Forward current I F (mA)
IF Pc

EE-SJ3 Series

Forward Current vs. Forward Voltage Characteristics (Typical)
Collector dissipation Pc (mW) Forward current I F (mA)

Light Current vs. Forward Current Characteristics (Typical)
Ta = 25°C VCE = 10 V

Ta = -- 30°C Ta = 25°C Ta = 70°C

Ambient temperature Ta (°C)

Forward voltage VF (V)

Light current I L (mA)

Forward current IF (mA)

Light Current vs. Collector - Emitter Voltage Characteristics (EE-SJ3-G)
Ta = 25°C

Relative Light Current vs. Ambient Temperature Characteristics (Typical)
Relative light current I L (%)
IF = 20 mA VCE = 5 V

Dark Current vs. Ambient Temperature Characteristics (Typical)
VCE = 10 V 0lx

Light current I L (mA)

IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA

Dark current I D (nA)

Collector -- Emitter voltage VCE (V)

Ambient temperature Ta (°C)

Ambient temperature Ta (°C)

Response Time vs. Load Resistance Characteristics (Typical)
Response time tr, tf (µ s)
Vcc = 5 V Ta = 25°C

Sensing Position Characteristics (EE-SJ3-D)
Relative light current I L (%)
IF = 20 mA VCE = 10 V Ta = 25°C

Sensing Position Characteristics (EE-SJ3-G)
Relative light current I L (%)
IF = 20 mA VCE = 10 V Ta = 25°C -0 d+
Center of optical axis

Center of optical axis

Load resistance RL (k)

Distance d (mm)

Distance d (mm)

Sensing Position Characteristics (EE-SJ3-C)
Relative light current I L (%)
IF = 20 mA VCE = 10 V Ta = 25°C

Response Time Measurement Circuit
Input Output 90 % 10 %

Center of optical axis

Input

Output

Distance d (mm)

NOTE: DIMENSIONS SHOWN ARE IN MILLIMETERS. To convert millimeters to inches divide by 25.4.

R

OMRON ELECTRONICS LLC
One East Commerce Drive Schaumburg, IL 60173

OMRON CANADA, INC.
885 Milner Avenue Toronto, Ontario M1B 5V8

OMRON ON­LINE
Global ­ http://www.omron.com USA ­ http://www.omron.com/oei Canada ­ http://www.omron.com/oci Printed in U.S.A.

847­882­2288
Cat. No. GC NAPMS­1 02/03

416-286-6465
Specifications subject to change without notice.




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