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Part: EE-SH3-DS
Category:
Optoelectronics
-> Photosensors
-> Photomicrosensor
Description: EE-SH3 Series Non-amplified Photomicrosensordata Sheet
Company: Omron Corporation
Datasheet: Download EE-SH3-DS datasheet File size : 42 kB
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Datasheet text preview:
EE-SH3 Series
Dimensions
Note:
Four, R1
Photomicrosensor
Features
· All models have 3.4 mm wide slot. · Solder terminal models: · PCB terminal models:
(Transmissive)
All units are in millimeters unless otherwise indicated.
Two, C1.5 6.2 19±0.15 25.4
EE-SH3/-SH3-CS/-SH3-DS/-SH3-GS EE-SH3-B/-SH3-C/-SH3-D/-SH3-G
Matted Center mark 3.4±0.2
Two, 3.2 dia. holes
Solder terminal Cross section AA
PCB terminal Cross section AA
Absolute Maximum Ratings (Ta = 25°C)
Item Emitter Forward current Pulse f orward current Reverse voltage Detector Collector - Emitter voltage Emitter - Collector voltage Collector c urrent Collector dissipation Ambient temperature Operating Storage Soldering temperature Symbol IF IFP VR VCEO VECO IC PC Topr Tstg Tsol Rated value 50 mA (see note 1) 1A (see note 2) 4V 30 V --20 mA 100 mW (see note 1) -- 25°C to 8 5 °C -- 30°C to 100°C 260°C (see note 3)
10.2
7.2 ± 0 . 2
7.2±0.2
Four, 0.25 7.6 ± 0.3 2.54±0.2
Model EE-SH3(-B) EE-SH3-C(S) Internal Circuit
K C
Aperture (a x b) 2.1 x 0.5 2.1 x 1.0 2.1 x 0.2 0.5 x 2.1
EE-SH3-D(S) EE-SH3-G(S)
Unless otherwise specified, the tolerances are as shown below.
Dimensions 3 mm max. Tolerance ± 0.2 ± 0.24 ± 0.29 ± 0.35 ± 0.42
A
E
Note:
Terminal No. A K C E
Name Anode Cathode Collector Emitter
3 < mm 6 6 < mm 10 10 < mm 18 18 < mm 30
1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 µs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds.
Ordering Information
Description Photomicrosensor (Transmissive) EE-SH3(-B) EE-SH3-C(S) EE-SH3-D(S) EE-SH3-G(S) Part number
Electrical and Optical Characteristics (Ta = 25°C)
Item Forward voltage Emitter Reverse current Peak emission wavelength Light current Detector Dark current Leakage c urrent Collector - Emitter saturated voltage Peak spectral sensitivity wavelength Rising time Falling t ime Symbol EE-SH3(-B) VF IR P IL ID ILEAK VCE (sat) P tr tf 1.2 V typ., 1.5 V max. 0.01 µA typ., 10 µA max. 940 nm typ. 0.5 to 14 mA typ. 1 to 28 mA typ. 0.1 mA min. 0.5 to 14 mA Value EE-SH3-C(S) EE-SH3-D(S) EE-SH3-G(S) IF = 30 mA VR = 4 V IF = 20 mA IF = 20 mA, VCE = 10 V VCE = 10 V, 0 x ----0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA VCE = 10 V VCC = 5 V, RL = 100 , IL = 5 mA Condition
2 n A ty p . , 2 0 0 n A m a x . --0.1 V typ., 0.4 V max. 850 nm typ. 4 µ s ty p . 4 µ s ty p .
EE-SH3 Series Engineering Data
Forward Current vs. Collector Dissipation Temperature Rating
IF Pc
EE-SH3 Series
Forward Current vs. Forward Voltage Characteristics (Typical)
Collector dissipation Pc (mW) Forward current I F (mA)
Light Current vs. Forward Current Characteristics (Typical)
Ta = 25°C VCE = 10 V
Forward current I F (mA)
Ta = -- 30°C Ta = 25°C Ta = 70°C
Ambient temperature Ta (°C)
Forward voltage VF (V)
Light current I L (mA)
Forward current IF (mA)
Light Current vs. Collector - Emitter Voltage Characteristics (EE-SH3(-B))
Ta = 25°C
Relative Light Current vs. Ambient Temperature Characteristics (Typical)
Relative light current I L (%)
IF = 20 mA VCE = 5 V
Dark Current vs. Ambient Temperature Characteristics (Typical)
VCE = 10 V 0 x
Light current I L (mA)
IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA
Dark current I D (nA)
Collector -- Emitter voltage VCE (V)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Response Time vs. Load Resistance Characteristics (Typical)
Vcc = 5 V Ta = 25°C
Sensing Position Characteristics (EE-SH3-D(S))
Relative light current I L (%)
IF = 20 mA VCE = 10 V Ta = 25°C
Sensing Position Characteristics (EE-SH3(-B))
Relative light current I L (%)
IF = 20 mA VCE = 10 V Ta = 25°C
Response time tr, tf (µ s)
Center of optical axis
Center of optical axis
Load resistance RL (k)
Distance d (mm)
Distance d (mm)
Sensing Position Characteristics (EE-SH3-G(S))
Relative light current I L (%)
IF = 20 mA VCE = 10 V Ta = 25°C -0 d+
Center of optical axis
Sensing Position Characteristics (EE-SH3-C(S))
Relative light current I L (%)
IF = 20 mA VCE = 10 V Ta = 25°C
Response Time Measurement Circuit
Input Output 90 % 10 %
Center of optical axis
Input
Output
Distance d (mm)
Distance d (mm)
NOTE: DIMENSIONS SHOWN ARE IN MILLIMETERS. To convert millimeters to inches divide by 25.4.
R
OMRON ELECTRONICS LLC
One East Commerce Drive Schaumburg, IL 60173
OMRON CANADA, INC.
885 Milner Avenue Toronto, Ontario M1B 5V8
OMRON ONLINE
Global http://www.omron.com USA http://www.omron.com/oei Canada http://www.omron.com/oci Printed in U.S.A.
8478822288
Cat. No. GC NAPMS1 02/03
416-286-6465
Specifications subject to change without notice.
Others parts begin by ee
EE-1 EE-2 EE-3
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