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Part: EE-SG3-B
Category:
Optoelectronics
-> Photosensors
-> Photomicrosensor
Description: EE-SG3/-SG3-B Non-amplified Photomicrosensordata Sheet
Company: Omron Corporation
Datasheet: Download EE-SG3-B datasheet File size : 42 kB
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Datasheet text preview:
EE-SG3/EE-SG3-B
Dimensions
Note: All units are in millimeters unless otherwise indicated.
Two, 3.2 dia. holes 3.6±0.2 Optical axis 13 19±0.1 25.4±0.2
Photomicrosensor
Features
· Dust-proof model with a 3.6 mm wide slot. · Solder terminal model (EE-SG3). · PCB terminal model (EE-SG3-B).
(Transmissive)
Absolute Maximum Ratings (Ta = 25°C)
Item Emitter
1.2 Four, 0.25 7.62±0.3 0.8 Four, 1.5 2.54 0.6 Four, 0.5 2.54±0.3 Cross section AA
Symbol IF IFP VR VCEO VECO
Rated value 50 mA (see note 1) 1A (see note 2) 4V 30 V --20 mA 100 mW (see note 1) -- 25°C to 85°C -- 30°C to 100°C 260°C (see note 3)
Forward current Pulse forward current Reverse voltage
Detector
Collector - Emitter voltage Emitter - Collector voltage
Cross section AA
Internal Circuit
K C
Collector current IC Collector dissipation Unless otherwise specified, the tolerances are as shown below. Dimensions 3 mm max. 3 < mm 6 6 < mm 10 10 < mm 18 18 < mm 30 Tolerance ±0.3 ±0.375 ±0.45 ±0.55 ±0.65 Ambient temperature Operating Storage Soldering temperature Note: PC Topr Tstg Tsol
A
E
Terminal No. A K C E
Name Anode Cathode Collector Emitter
1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 µs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds.
Ordering Information
Description Photomicrosensor (Transmissive ) EE-SG3 EE-SG3-B Part number
Electrical and Optical Characteristics (Ta = 25°C)
Item Emitter Forward voltage Reverse current Peak emission wavelength Detector Light current Dark current Leakage current Collector - Emitter saturated voltage Peak spectral sensitivity wavelength Rising time Falling time IR P IL ID ILEAK VCE (sat) P tr tf Symbol VF Value 1.2 V typ., 1.5 V max. 0.01 µA typ., 10 µA max. 940 nm typ. 2 mA min., 40 mA max. 2 nA typ., 200 nA max. --0.1 V typ., 0.4 V max. 850 nm typ. 4 µs typ. 4 µs typ. VR = 4 V IF = 20 mA IF = 15 mA, VCE = 10 V VCE = 10 V, 0 x --IF = 30 mA, IL = 1 mA VCE = 10 V VCC = 5 V, RL = 100 , IL = 5 mA VCC = 5 V, RL = 100 , IL = 5 mA Condition IF = 30 mA
EE-SG3/EE-SG3-B Engineering Data
Forward Current vs. Collector Dissipation Temperature Rating
Collector dissipation Pc (mW)
IF
EE-SG3/EE-SG3-B
Forward Current vs. Forward Voltage Characteristics (Typical)
Light Current vs. Forward Current Characteristics (Typical)
Ta = 25°C VCE = 10 V
Forward current I F (mA)
Forward current I F (mA)
Pc
Ta = -- 30°C Ta = 25°C Ta = 70°C
Ambient temperature Ta (°C)
Forward voltage VF (V)
Light current I L (mA)
Forward current IF (mA)
Light Current vs. Collector - Emitter Voltage Characteristics (Typical)
Ta = 25°C
Relative Light Current vs. Ambient Temperature Characteristics (Typical)
Relative light current I L (%)
IF = 20 mA VCE = 5 V
Dark Current vs. Ambient Temperature Characteristics (Typical)
VCE = 10 V 0 x
Light current I L (mA)
IF = 20 mA IF = 15 mA IF = 10 mA I F = 5 mA
Dark current I D (nA)
IF = 25 mA
Collector -- Emitter voltage VCE (V)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Response Time vs. Load Resistance Characteristics (Typical)
Vcc = 5 V Ta = 25°C
Sensing Position Characteristics (Typical)
IF = 20 mA VCE = 10 V Ta = 25°C (Center of optical axis)
Response Time Measurement Circuit
Input Output 90 % 10 %
Relative light current I L (%)
Response time tr, tf (µ s)
Input
Output
Load resistance RL (k)
Distance d (mm)
NOTE: DIMENSIONS SHOWN ARE IN MILLIMETERS. To convert millimeters to inches divide by 25.4.
R
OMRON ELECTRONICS LLC
One East Commerce Drive Schaumburg, IL 60173
OMRON CANADA, INC.
885 Milner Avenue Toronto, Ontario M1B 5V8
OMRON ONLINE
Global http://www.omron.com USA http://www.omron.com/oei Canada http://www.omron.com/oci Printed in U.S.A.
8478822288
Cat. No. GC NAPMS1 02/03
416-286-6465
Specifications subject to change without notice.
Others parts begin by ee
EE-1 EE-2 EE-3
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