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Part: EE-SF5-B
Category:
Optoelectronics
-> Photosensors
-> Photomicrosensor
Description: EE-SF5(-B) Non-amplified Photomicrosensordata Sheet
Company: Omron Corporation
Datasheet: Download EE-SF5-B datasheet File size : 42 kB
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EE-SF5(-B)
Dimensions
Note: All units are in millimeters unless otherwise indicated.
Matted
Photomicrosensor
Features
· Dust-tight model with a 5 mm sensing distance. · With a visible-light intercepting filter which allows objects · Mounted with M2 screws. · Model with soldering terminals (EE-SF5). · Model with PCB terminals (EE-SF5-B).
to be sensed without being greatly influenced by the light radiated from fluorescent lamps.
(Reflective)
1.9 dia.
2.2 dia. hole
Four, 1.5
Absolute Maximum Ratings (Ta = 25°C)
Four, 0.5
7.6 ± 1
Four, 0.25 7.62±0.3 EE-SF5
Item Emitter Forward current Pulse forward current Reverse voltage Detector
Collector - Emitter voltage Emitter - Collector voltage
Symbol IF IFP VR VCEO VECO
Rated value 50 mA (see note 1) 1A (see note 2) 4V 30 V --20 mA 100 mW (see note 1) -- 25°C to 80°C -- 30°C to 80°C 260°C (see note 3)
2.54 2.54±0.2 EE-SF5-B
Internal Circuit
A C
Unless otherwise specified, the tolerances are as shown below. Dimensions 3 mm max. 3 < mm 6 6 < mm 10 10 < mm 18 18 < mm 30 Tolerance ±0.3 ±0.375 ±0.45 ±0.55 ±0.65 Ambient temperature
Collector current IC Collector dissipation Operating Storage Soldering temperature Note: PC Topr Tstg Tsol
K
E
Terminal No. A K C E
Name Anode Cathode Collector Emitter
Ordering Information
Description Photomicrosensor ( Reflective)
1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 µs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds.
Part number EE-SF5(-B)
Electrical and Optical Characteristics (Ta = 25°C)
Item Emitter Forward voltage Reverse current Peak emission wavelength Detector Light current VF IR P IL Symbol Value 1.2 V typ., 1.5 V max. 0.01 µA typ., 10 µA max. 940 nm typ. 200 µA min., 2,000 µA max. IF = 30 mA VR = 4 V IF = 20 mA IF = 20 mA, VCE = 10 V White paper with a reflection r atio of 90%, d = 5 mm (see note) VCE = 10 V, 0 x IF = 20 mA, VCE = 10 V with no reflection --VCE = 10 V VCC = 5 V, RL = 1 k, IL = 1 mA VCC = 5 V, RL = 1 k, IL = 1 mA Condition
Dark current Leakage c urrent Collector - Emitter saturated voltage Peak spectral sensitivity wavelength Rising time Falling t ime
ID I LEAK VCE (sat) P tr tf
2 n A ty p . , 2 0 0 n A m a x . 2 µA max. --850 nm typ. 30 µs typ. 30 µs typ.
Note:
The letter "d" indicates the distance between the top surface of the sensor and the sensing object.
206
EE-SF5(-B) Engineering Data
Forward Current vs. Collector Dissipation Temperature Rating
Collector dissipation Pc (mW) Forward current I F (mA)
EE-SF5(-B)
Light Current vs. Forward Current Characteristics (Typical)
Ta = 25°C VCE = 10 V d = 5 mm Sensing object: White paper with a reflection factor of 90%
Light Current vs. Collector - Emitter Voltage Characteristics (Typical)
Ta = 25°C d = 5 mm Sensing object: White paper with a reflection factor of 90%
IF = 40 mA
Light current I L (mA)
Light current I L (mA)
IF = 30 mA IF = 20 mA
IF = 10 mA
Ambient temperature Ta (°C)
Relative Light Current vs. Ambient Temperature Characteristics (Typical)
Relative light current I L (%)
IF = 20 mA VCE = 5 V
Dark Current vs. Ambient Temperature Characteristics (Typical)
VCE = 10 V 0 x
Forward current IF (mA)
Response Time vs. Load Resistance Characteristics (Typical)
Response time tr, tf ( µs)
Collector -- Emitter voltage VCE (V)
Vcc = 5 V Ta = 25°C
Ambient temperature Ta (°C)
Dark current I D (nA)
Ambient temperature Ta (°C)
Load resistance RL (k)
Sensing Distance Characteristics (Typical)
Ta = 25°C VCE = 10 V Sensing object: White paper with a reflection factor of 90%
Sensing Position Characteristics (Typical)
Relative light current I L (%)
IF = 20 mA VCE = 5 V Ta = 25°C (a) : d 1 = 3 m m (b) : d 1 = 5 m m Sensing object: W hite paper with a reflection factor of 90%
Sensing Position Characteristics (Typical)
Relative light current I L (%)
IF = 20 mA VCE = 5 V Ta = 25°C d1 = 5 mm Sensing object: White paper with a reflection factor of 90%
Light current IL ( µA)
Phototransistor s ide LED side
d1
d1 = 5 mm
Sensing Angle Characteristics (Typical)
Relative light current I L (%)
Distance d (mm)
Sensing Angle Characteristics (Typical)
Relative light current I L (%)
Distance d2 (mm)
Response Time Measurement Circuit
Input Output 90 % 10 %
Distance d2 (mm)
Input
Sensing object Ta = 25°C IF = 20 mA VCE = 10 V d = 5 mm Sensing object: White paper with a r eflection factor of 90%
Ta = 25°C IF = 20 mA VCE = 10 V Sensing object: White paper with a r eflection factor of 90% d = 5 mm
Output
Angle deviation (°)
Angle deviation (°)
207
NOTE: DIMENSIONS SHOWN ARE IN MILLIMETERS. To convert millimeters to inches divide by 25.4.
R
OMRON ELECTRONICS LLC
One East Commerce Drive Schaumburg, IL 60173
OMRON CANADA, INC.
885 Milner Avenue Toronto, Ontario M1B 5V8
OMRON ONLINE
Global http://www.omron.com USA http://www.omron.com/oei Canada http://www.omron.com/oci Printed in U.S.A.
8478822288
Cat. No. NAPMS1 02/03
416-286-6465
Specifications subject to change without notice.
Others parts begin by ee
EE-1 EE-2 EE-3
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