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Part: JANTX2N5661
Category: Discrete -> Transistors -> Bipolar -> General Purpose -> NPN
Description: NPN Transistor, Package : TO-66
Company: Microsemi Corporation
Datasheet: Download JANTX2N5661 datasheet File size : 309 kB
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Datasheet text preview:
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/454 Devices 2N5660 2N5661 2N5662 2N5663 Qualified Level JAN, JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current
Symbol
VCEO VCBO VCER VEBO IB IC
@ TA = +250C @ TC = +1000C Operating & Storage Junction Temperature Range Total Power Dissipation
PT TJ, Tstg 2N5660 2N5661 5.0 87.5
2N5660 2N5661 2N5662 2N5663 200 300 250 400 250 400 6.0 0.5 2.0 2N5660 2N5662 2N5661 2N5663 2.0(1) 1.0(2) (3) 20 15(4) -65 to +200 2N5662 2N5663 6.67 145.8
Unit
Vdc Vdc Vdc Vdc Adc Adc
TO-66* (TO-213AA) 2N5660, 2N5661
W W 0 C
THERMAL CHARACTERISTICS Characteristics
Thermal Resistance, Junction-to-Case Junction-to-Ambient 1) 2) 3)
Symbol
RJC
Unit
0
C/W
4)
RJA Derate linearly 11.4 mW/0C for TA >+ 250C Derate linearly 5.7 mW/0C for TA > +250C Derate linearly 200 mW/0C for TC > +1000C Derate linearly 150 mW/0C for TC > +1000C
TO-5* 2N5662, 2N5663
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min.
*See appendix A for package outline
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Breakdown Voltage IC = 10 mAdc, RBE = 100 Emitter-Base Breakdown Voltage IE = 10 µAdc 2N5660, 2N5662 2N5661, 2N5663 2N5660, 2N5662 2N5661, 2N5663 V(BR)CEO 200 300 250 400 6.0 Vdc
V(BR)CER V(BR)EBO
Vdc Vdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 1 of 2
2N5660, 2N5661, 2N5662, 2N5663 JAN SERIES
ELECTRICAL CHARACTERISTICS (con't)
Characteristics Collector-Emitter Cutoff Current VCE = 200 Vdc VCE = 300 Vdc Collector-Base Cutoff Current VCB = 200 Vdc VCB = 250 Vdc VCB = 300 Vdc VCB = 400 Vdc Forward-Current Transfer Ratio IC = 50 mAdc, VCE = 2.0 Vdc IC = 0.5 Adc, VCE = 5.0 Vdc IC = 1.0 Adc, VCE = 5.0 Vdc IC = 2.0 Adc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 1.0 Adc, IB = 0.1 Adc IC = 2.0 Adc, IB = 0.4 Adc Base-Emitter Saturation Voltage IC = 1.0 Adc, IB = 0.1 Adc IC = 2.0 Adc, IB = 0.4 Adc Symbol 2N5660, 2N5662 2N5661, 2N5663 2N5660, 2N5662 2N5660, 2N5662 2N5661, 2N5663 2N5661, 2N5663 ICES Min. Max. 0.2 0.2 0.1 1.0 0.1 1.0 Unit µAdc µAdc µAdc mAdc µAdc mAdc
ICBO
ON CHARACTERISTICS (5)
2N5660, 2N5662 2N5661, 2N5663 2N5660, 2N5662 2N5661, 2N5663 All Types All Types
hFE
40 25 40 25 15 5.0
120 75
VCE(sat)
0.4 0.8 1.2 1.5
Vdc
VBE(sat)
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 0.1 Adc, VCE = 5.0 Vdc, f = 10 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz hfe Cobo 2.0 7.0 45 pF
SWITCHING CHARACTERISTICS
Turn-On Time VCC = 100 Vdc; IC = 0.5 Adc; IB1 = 15 Adc 2N5660, 2N5662 VCC = 100 Vdc; IC = 0.5 Adc; IB1 = 25 Adc 2N5661, 2N5663 Turn-Off Time VCC = 100 Vdc; IC = 0.5 Adc; IB1 = -IB2 = 15 Adc 2N5660, 2N5662 VCC = 100 Vdc; IC = 0.5 Adc; IB1 = -IB2 = 25 Adc 2N5661, 2N5663
t
on
0.25 0.25 0.85 1.2
µs
t
off
µs
SAFE OPERATING AREA
DC Tests TC = +1000C, 1 Cycle, t 1.0 s Test 1 VCE = 10 Vdc, IC = 2.0 Adc 2N5660, 2N5661 VCE = 7.5 Vdc, IC = 2.0 Adc 2N5662, 2N5663 Test 2 VCE = 40 Vdc, IC = 500 mAdc 2N5660, 2N5661 VCE = 25 Vdc, IC = 600 mAdc 2N5662, 2N5663 Test 3 VCE = 200 Vdc, IC = 36 mAdc 2N5660 VCE = 200 Vdc, IC = 27 mAdc 2N5662 Test 4 VCE = 300 Vdc, IC = 19 mAdc 2N5661 VCE = 300 Vdc, IC = 14 mAdc 2N5663 (5) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 2 of 2
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