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Part: JANTX2N5303
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> NPN
Description: NPN Transistor, Package : TO-3
Company: Microsemi Corporation
Datasheet: Download JANTX2N5303 datasheet File size : 309 kB
Request For quote: Find where to buy JANTX2N5303
Datasheet text preview:
TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/456 Devices 2N5302 2N5303 Qualified Level JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation
Symbol
VCEO VCBO VEBO IC IB PT TJ, Tstg Symbol RJC
2N5302
60 60 5.0 30
2N5303
80 80
Unit
Vdc Vdc Vdc Adc Adc W W/0C 0 C Unit C/W
@ TA = +250C(1) @ TC = +1000C(2) Operating & Storage Junction Temperature Range
20 7.5 5.0 115 -65 to +200 Max. 0.875
TO-3* (TO-204AA)
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 28.57 mW/0C for TA = +250C 2) Derate linearly 1.14 W/0C for TC = +1000C
0
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current IC = 200 mAdc, IB = 0 Collector-Emitter Cutoff Current VCE = 60 Vdc, IB = 0 VCE = 80 Vdc, IB = 0 Emitter-Base Cutoff Current VEB = 5.0 Vdc, IC = 0 Collector-Emitter Cutoff Current VBE = 1.5 Vdc, VCE = 60 Vdc VBE = 1.5 Vdc, VCE = 80 Vdc Collector-Emitter Cutoff Current VCE = 60 Vdc VCE = 80 Vdc 2N5302 2N5303 2N5302 2N5303 V(BR)CEO 60 80 10 10 5.0 5.0 5.0 5.0 5.0 Vdc
ICEO IEBO
µAdc µAdc µAdc
2N5302 2N5303 2N5302 2N5303
ICEX
ICBO
µAdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101 Page 1 of 2
2N5302, 2N5303 JAN SERIES ELECTRICAL CHARACTERISTICS Characteristics ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 1.0 Adc, VCE = 2.0 Vdc All Types IC = 15 Adc, VCE = 2.0 Vdc 2N5302 IC = 10 Adc, VCE = 2.0 Vdc 2N5303 IC = 30 Adc, VCE = 4.0 Vdc 2N5302 IC = 20 Adc, VCE = 4.0 Vdc 2N5303 Base-Emitter Saturation Voltage IC = 10 Adc, IB = 1.0 Adc All Types IC = 15 Adc, IB = 1.5 Adc 2N5302 IC = 15 Adc, IB = 1.5 Adc 2N5303 IC = 20 Adc, IB = 2.0 Adc 2N5302 IC = 20 Adc, IB = 4.0 Adc 2N5303 Base-Emitter Non-Saturation Voltage VCE = 2.0 Vdc; IC = 15 Adc 2N5302 VCE = 2.0 Vdc; IC = 10 Adc 2N5303 VCE = 4.0 Vdc; IC = 30 Adc 2N5302 VCE = 4.0 Vdc; IC = 20 Adc 2N5303 Collector-Emitter Saturation Voltage IC = 10 Adc, IB = 1.0 Adc 2N5302 IC = 10 Adc, IB = 1.0 Adc 2N5303 IC = 15 Adc, IB = 1.5 Adc 2N5302 IC = 15 Adc, IB = 1.5 Adc 2N5303 IC = 20 Adc, IB = 2.0 Adc 2N5302 IC = 20 Adc, IB = 4.0 Adc 2N5303 IC = 30Adc, IB = 6.0 Adc 2N5302 DYNAMIC CHARACTERISTICS Magnitude of Small-Signal Short Circuit Forward Current Transfer Ratio IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz SWITCHING CHARACTERISTICS Delay Time Rise Time VCC = 30 Vdc; IC = 10 Adc; IB = 1.0 Adc Storage Time Fall Time SAFE OPERATING AREA Symbol Min. Max. Unit
hFE
40 15 15 5.0 5.0
60 60
VBE(sat)
1.7 1.8 2.0 2.5 2.5 1.8 1.5 3.0 2.5 0.75 1.0 1.0 1.5 2.0 2.0 3.0
Vdc
VBE
Vdc
VCE(sat)
Vdc
hfe
Cobo
t
2.0
40 800 0.2 0.9 2.0 1.0 pF µs µs µs µs
d r t s t f
t
DC Tests: TC = 250C, 1 Cycle, t 1.0 s
Test 1 VCE = 6.67 Vdc, IC = 30 Adc VCE = 10 Vdc, IC = 20 Adc Test 2 VCE = 20 Vdc, IC = 10 Adc Test 3 VCE = 40 Vdc, IC = 3.0Adc Test 4 VCE = 50 Vdc, IC = 600 mAdc VCE = 60 Vdc, IC = 600 mAdc
2N5302 2N5303 2N5302; 2N5303 2N5302; 2N5303 2N5302 2N5303
Clamped Switching: TA = 250C, VCE = 15 Vdc
2N5302 2N5303
Clamp Voltage = 60 Vdc, IC = 30 Adc Clamp Voltage = 80 Vdc, IC = 20 Adc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 2 of 2
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