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Part: JANTX2N5039
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> NPN
Description: NPN Transistor, Package : TO-3
Company: Microsemi Corporation
Datasheet: Download JANTX2N5039 datasheet File size : 309 kB
Request For quote: Find where to buy JANTX2N5039
Datasheet text preview:
TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/439 Devices 2N5038 2N5039 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Temperature Range
Symbol
VCEO VCBO VEBO IB IC PT Top, Tstg
2N5038
90 150
2N5039
75 125
Units
Vdc Vdc Vdc Adc Adc W
0
7.0 5.0 20 140 -65 to +200 Max. 1.25
C
THERMAL CHARACTERISTICS
Characteristics Symbol Thermal Resistance, Junction-to-Case RJC 1) Derate linearly 800 mW/0C for TC > +250C
0
Unit C/W
TO-3* (TO-204AA)
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min.
*See appendix A for package outline
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 200 mAdc Emitter-Base Breakdown Voltage IE = 25 mAdc Collector-Base Cutoff Current VCE = 150 Vdc VCE = 125 Vdc Collector-Base Cutoff Current VCE = 70 Vdc VCE = 55 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Current VBE = -1.5 Vdc VCE = 100 Vdc VBE = -1.5 Vdc VCE = 85 Vdc 2N5038 2N5039 V(BR)CEO V(BR)EBO 2N5038 2N5039 2N5038 2N5039 ICBO 90 75 7.0 1.0 1.0 1.0 1.0 1.0 5.0 5.0 Vdc Vdc µAdc
ICEO IEBO
µAdc µAdc µAdc
2N5038 2N5039
ICEX
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 1 of 2
2N5038, 2N5039, JAN SERIES
ELECTRICAL CHARACTERISTICS (con't) ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio IC = 0.5 Adc, VCE = 5.0 Vdc IC = 2.0 Adc, VCE = 5.0 Vdc IC = 12 Adc, VCE = 5.0 Vdc IC = 10 Adc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 12 Adc, IB = 1.2 Adc IC = 10 Adc, IB = 1.0 Adc IC = 20 Adc, IB = 5.0 Adc Base-Emitter Saturation Voltage IC = 20 Adc, IB = 5.0 Adc Base-Emitter Voltage IC = 12 Adc, VCE = 5.0 Vdc IC = 10 Adc, VCE = 5.0 Vdc Characteristics Symbol Min. Max. Unit
2N5038 2N5039 2N5038 2N5039 2N5038 2N5039 2N5038 2N5039 Both
hFE
50 30 50 30 15 15
200 150
VCE(sat)
1.0 1.0 2.5 3.3 1.8 1.8
Vdc
VBE(sat) 2N5038 2N5039
Vdc Vdc
VBE
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio IC = 2.0 Adc, VCE = 10 Vdc, f = 5.0 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz hFE Cobo 12 48 500 pF
SWITCHING CHARACTERISTICS
Turn-On Time VCC = 30 ± 2 Vdc; IC = 12 Adc; IB1= 1.2 Adc VCC = 30 ± 2 Vdc; IC = 10 Adc; IB1= 1.0 Adc Turn-Off Time VCC = 30 ± 2 Vdc; IC = 12 Adc; IB1 = -IB2 = 1.2 Adc VCC = 30 ± 2 Vdc; IC = 10 Adc; IB1 = -IB2 = 1.0 Adc 2N5038 2N5039 2N5038 2N5039
t
on
0.5
µs
t
off
2.0
µs
SAFE OPERATING AREA
DC Tests TC = +250C, 1 Cycle, t = 1.0 s Test 1 VCE = 28 Vdc, IC = 5.0 Adc Test 2 VCE = 45 Vdc, IC = 0.9 Adc
Test 3
VCE = 7.0 Vdc, IC = 20 Adc Test 4 VCE = 90 Vdc, IC = 0.23 Adc 2N5038 Test 4 VCE = 75 Vdc, IC = 0.32 Adc 2N5039 (2) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 2 of 2
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