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Part: JANTX2N5005
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> PNP
Description: PNP Transistor, Package : TO-59_ISO
Company: Microsemi Corporation
Datasheet: Download JANTX2N5005 datasheet File size : 309 kB
Request For quote: Find where to buy JANTX2N5005
Datasheet text preview:
TECHNICAL DATA
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/535 Devices 2N5003 2N5005 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range Total Power Dissipation
Symbol
VCEO VCBO VEBO IC IC(3) PT TJ, Tstg Symbol RJC RJA
0
Value
80 100 5.5 5.0 10 2.0 58 -65 to +200 Max. 3.0 88
Unit
Vdc Vdc Vdc Adc W
0
C
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1) Derate linearly 11.4 mW/ C for TA > +25 C 2) Derate linearly 331 mW/0C for TC > +250C 3) This value applies for PW 8.3 ms, duty cycle 1%
0 0 0
TO-59
Unit C/W C/W
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol V(BR)CEO ICEO ICES Min. 80
*See appendix A for package outline
Max.
Unit Vdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 100 mAdc, Collector-Emitter Cutoff Current VCE = 40 Vdc, IB = 0 Collector-Emitter Cutoff Current VCE = 60 Vdc, VBE = 0 VCE = 100 Vdc, VBE = 0 Emitter-Base Cutoff Current VBE = 4.0 Vdc, IC = 0 VBE = 5.5 Vdc, IC = 0
50 1.0 1.0 1.0 1.0
µAdc µAdc mAdc MAdc MAdc
IEBO
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 1 of 2
2N5003, 2N5005 JAN SERIES ELECTRICAL CHARACTERISTICS (Con't)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS
Forward-Current Transfer Ratio IC = 50 mAdc, VCE = 5.0 Vdc IC = 2.5 Adc, VCE = 5.0 Vdc IC = 5.0 Adc, VCE = 5.0 Vdc IC = 50 mAdc, VCE = 5.0 Vdc IC = 2.5 Adc, VCE = 5.0 Vdc IC = 5.0 Adc, VCE = 5.0 Vdc Base-Emitter Voltage Non-saturated VCE = 5.0 Adc, IC =2.5 Adc Collector-Emitter Saturation Voltage IC = 2.5 Adc, IB = 250 mAdc IC = 5.0 Adc, IB = 500 mAdc Base-Emitter Saturation Voltage IC = 2.5 Adc, IB = 250 mAdc IC = 5.0 Adc, IB = 500 mAdc 2N5003 20 30 20 hFE 2N5005 50 70 40 200 90
VBE VCE(sat)
1.45 0.75 1.5 1.45 2.2
Vdc Vdc
VBE(sat)
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio 2N5003 IC = 100 mAdc, VCE = 5.0 Vdc, f = 10 MHz 2N5005 Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio 2N5003 IC = 500 mAdc, VCE = 5.0 Vdc, f = 10 MHz 2N5005 Output Capacitance VCB = 10 Vdc, IE = 0, f = 1 MHz hfe 2.0 50
hfe
6.0 7.0 PF
Cobo
250
SWITCHING CHARACTERISTICS
Turn-On Time IC = 5 Adc; IB1= 500 mAdc Storage Time IB2= -500 mAdc Fall Time V BE(OFF) = 3.7 Vdc Turn-Off Time RL = 6
t
on t s t f
0.5 1.4 0.5 1.5
µs µs µs µs
t
off
SAFE OPERATING AREA
DC Tests TC = +250C, VCE = 0, tP = 1 second 1 Cycle Test 1 VCE = 12 Vdc, IC = 5 Adc Test 2 VCE = 32 Vdc, IC = 1.7 Adc Test 3 VCE = 80 Vdc, IC = 100 mAdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 2 of 2
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