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Part: JANTX2N2151

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> General Purpose
         -> NPN

Description: NPN Transistor, Package : TO-111

Company: Microsemi Corporation

Datasheet: Download JANTX2N2151 datasheet     File size : 95 kB

Request For quote: Find where to buy JANTX2N2151



Datasheet text preview:
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/277 Devices 2N2150 2N2151 Qualified Level JANTX

MAXIMUM RATINGS (TC = 250C unless otherwise noted) Ratings Symbol Value
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ Tc = +1000C(1) Operating & Storage Junction Temperature Range VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RJC 100 150 8.0 2.0 2.0 30 -65 to +200 Max. 3.3

Units
Vdc Vdc Vdc Adc Adc W
0

C

THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly @ 0.3 W/0C for TC > +1000C
0

Unit C/W

TO-111*

ELECTRICAL CHARACTERISTICS (TC = +250C)
Characteristics Symbol V(BR)CEO VCBO ICEO ICBO ICEX IEBO ICES Min. 100 150

*See Appendix A for Package Outline

Max.

Unit Vdc Vdc

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 50 mAdc Collector-Emitter Breakdown Voltage IC = 100 ľAdc Collector-Emitter Cutoff Current VCE = 80 Vdc Collector-Base Cutoff Current VCB = 120 Vdc Collector-Emitter Cutoff Current VCE = 120 Vdc, VBE = -1.0 Vdc Emitter-Base Cutoff Current VEB = 8.0 Vdc Collector-Emitter Cutoff Current VCE = 120 Vdc, VBE = 0 Vdc

10 5.0 5.0 2.0 5.0

ľAdc ľAdc ľAdc ľAdc ľAdc

6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

P 120101 age 1 of 2

2N2150, 2N2151 JANTX SERIES

ELECTRICAL CHARACTERISTICS (con't)
Characteristics Symbol Min. Max. Unit

ON CHARACTERISTICS
Forward-Current Transfer Ratio IC = 1.0 Adc, VCE = 5.0 Vdc IC = 0.5 Adc, VCE = 5.0 Vdc IC = 0.1 Adc, VCE = 5.0 Vdc IC = 1.0 Adc, VCE = 5.0 Vdc IC = 0.5 Adc, VCE = 5.0 Vdc IC = 0.1 Adc, VCE = 5.0 Vdc Base-Emitter Voltage Non -Saturated VCE = 5.0 Vdc, IC =1.0 Adc Collector-Emitter Saturation Voltage IC = 1.0 Adc, IB = 0.1 Adc Base-Emitter Saturation Voltage IC = 1.0 Adc, IB = 0.1 Adc

2N2150 hFE 2N2151

20 20 20 40 40 40

60 60

120 120

VBE VCE(sat) VBE(sat)

1.2 1.0 1.2

Vdc Vdc Vdc

DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 0.1 mAdc, VCE = 30 Vdc, f = 10 MHz Output Capacitance VCB = 20 Vdc, IE = 0, 100 kHz f 1.0 MHz hfe Cobo 1.0 7.0 pF

160

SAFE OPERATING AREA
Test 1 VCE = 15 Vdc, IC = 2.0 Adc Test 2 VCE = 57 Vdc, IC = 200 mAdc Test 3 VCE = 100 Vdc, IC = 25 mAdc

6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

P 120101 age 2 of 2




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