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Part: S9014
Category:
Discrete
-> Transistors
-> Bipolar
Description: Package Type : TO-92 Plastic-encapsulate Bipolar Transistor, PC : 400mW, Vceo : 45V, ic : 100mA
Company: Micro Commercial Components
Datasheet: Download S9014 datasheet File size : 155 kB
Request For quote: Find where to buy S9014
Datasheet text preview:
MCC
Features
· · · · · ·
omponents 20736 Marilla Street Chatsworth !"# $
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S9014
TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts(Tamb=25 OC) of Power Dissipation. Collector-current 0.1A Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: S9014
NPN Silicon Transistors
TO-9 2
A E
Pin Configuration
C
BE
B
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Collector-Base Breakdown Voltage (IC=100uAdc, IE =0) Collector-Emitter Breakdown Voltage (IC=0.1mAdc, IB =0) Emitter-Base Breakdown Voltage (IE =100uAdc, IC=0) Collector Cutoff Current (VCB=50Vdc, IE =0) Collector Cutoff Current (VCE =35Vdc, IB =0) Emitter Cutoff Current (VE B =3.0Vdc, IC=0) DC Current Gain (IC=1.0mAdc, VCE=5.0Vdc) Collector-Emitter Saturation Voltage (IC=100mAdc, IB =5.0mAdc) Base-Emitter Saturation Voltage (IC=100mAdc, IB =5.0mAdc) Transistor Frequency (IC=10mAdc, VCE=5.0Vdc, f=30MHz) Min 50 45 5.0 ------Max ------0.1 0.1 0.1 Units Vdc Vdc Vdc uAdc uAdc uAdc
D
OFF CHARACTERISTICS
V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IE B O
C
ON CHARACTERISTICS
hFE VCE(sat) VBE(sat) 60 ----1000 0.3 1.0 --Vdc Vdc
G
DIMENSIONS INCHES DIM A B C D E G MIN .175 .175 .500 .016 .135 .095 MAX .185 .185 --.020 .145 .105 MIN 4.45 4.46 12.7 0.41 3.43 2.42 MM MAX 4.70 4.70 --0.63 3.68 2.67 NOTE
SMALL-SIGNAL CHARACTERISTICS
fT 150 --MHz
CLASSIFICATION OF HFE (1)
Rank Range A 60-150 B 120-200 C1 200-300 C2 300-400 C3 400-500 D 500-1000
www.mccsemi.com
Revision: 2 2003/06/30
Others parts begin by s9
S9-1 S9-2
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