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Part: M28S
Category:
Discrete
-> Transistors
-> Bipolar
Description: Package Type : TO-92 Plastic-encapsulate Bipolar Transistor, PC : 625mW, Vceo : 20V, ic : 1000mA
Company: Micro Commercial Components
Datasheet: Download M28S datasheet File size : 732 kB
Request For quote: Find where to buy M28S
Datasheet text preview:
MCC
Features
· · · ·
omponents 20736 Marilla Street Chatsworth !"# $
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M28S
Capable of 0.625Watts of Power Dissipation. Collector-current 1.0A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC
NPN Silicon Plastic-Encapsulate Transistor
TO-9 2
A E
Pin Configuration Bottom View
E
C
B
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Collector-Emitter Breakdown Voltage (I C=1.0mAdc, IB =0) Collector-Base Breakdown Voltage (I C=0.1mAdc, IE =0) Emitter-Base Breakdown Voltage (I E =0.1mAdc, IC=0) Collector Cutoff Current ( V CB=40Vdc, IE =0) Collector Cutoff Current ( VCE=20Vdc, IE =0) Emitter Cutoff Current ( VE B =5.0Vdc, IC=0) DC Current Gain (I C=1.0mAdc, V CE=1.0Vdc) DC Current Gain (I C=100mAdc, V CE=1.0Vdc) DC Current Gain (I C=300mAdc, VCE=1.0Vdc) DC Current Gain (I C=500mAdc, VCE=1.0Vdc) Collector-Emitter Saturation Voltage (I C=600mAdc, IB =20mAdc) Transition Frequency ( VCE=10Vdc, IC=50mAdc, f=30MHz) B 300-550 C 500-700 Min 20 40 6.0 -------Max ------1.0 5.0 0.1 Units Vdc Vdc Adc uAdc Vdc uAdc D 290 300 300 300 --100 1000 1000 1000 1000 0.55 ----------G
B
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO I CBO ICEO IE B O
C
ON CHARACTERISTICS
hFE -1 hFE -2 h FE -3 h FE -4 V CE(sat) fT
DIMENSIONS
Vdc MHz
DIM A B C D E G MIN .175 .175 .500 .016 .135 .095
INCHES MAX .185 .185 --.020 .145 .105 MIN 4.45 4.46 12.7 0.41 3.43 2.42
MM MAX 4.70 4.70 --0.63 3.68 2.67 NOTE
CLASSIFICATION OF HFE
Rank Range D 650-1000
www.mccsemi.com
Revision: 2 2003/04/30
Others parts begin by m2
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