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Part: EGP10K
Category:
Discrete
-> Diodes & Rectifiers
-> High Efficiency
Description: Package Type : DO-41, if : 1.0A, VRM : 800V
Company: Micro Commercial Components
Datasheet: Download EGP10K datasheet File size : 63 kB
Request For quote: Find where to buy EGP10K
Datasheet text preview:
MCC
Features
· · · ·
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
EGP10A THRU EGP10K
Superfast recovery time for high efficiency Glass passivated cavity-free junction, Plastic Case Low forward voltage, high current capability Low leakage current
Maximum Ratings
· · ·
1.0 Amp Glass Passivated High Efficient Rectifiers 50 to 800 Volts
DO-41
Operating Temperature: -55OC to +150 OC Storage Temperature: -55OC to +150 OC Typical Thermal Resistance: 50OC/W Junction to Ambient Maximum Recurrent Peak Reverse Voltage 50V 100V 200V 300V 400V 600V 800V
O
MCC Part Number EGP10A EGP10B EGP10D EGP10F EGP10G EGP10J EGP10K
Maximum RMS Voltage 35V 70V 140V 210V 280V 420V 560V 1.0 A 30A
Maximum DC Blocking Voltage 50V 100V 200V 300V 400V 600V 800V TA = 55OC 8.3ms, half sine IF=1.0A TA=25OC
DIMENSIONS INCHES MIN .166 .080 .028 1.000 MM MIN 4.10 2.00 .70 25.40 C D
A
Cathode Mark B
Electrical Characteristics @ 25 C Unless Otherwise Specified
Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage EGP10A-10D EGP10F-10G EGP10J -10K Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time EGP10A-10G EGP10J-10K Typical Junction Capacitance EGP10A-10D EGP10F-10K IF(AV) IFSM
D
VF
0.95V 1.25V 1.70V 5.0uA 100uA 50nS 75nS 22pF 15pF
IR
trr
TA = 25 C TA = 125OC IF=0.5A, IR=1.0A, IRR=0.25A TJ=25OC Measured at 1.0MHz, VR=4.0V
O
DIM A B C D
MAX .205 .107 .034 ---
MAX 5.20 2.70 .90 ---
NOTE
CJ
Revision: 3
www.mccsemi.com
2003/01/13
EGP10A thru EGP10K
Figure 1 Typical For ward Characteristics 20 10 6 4 2 Amps 1 .6 .4 .2 .1 .06 .04 .02 .01 .4 .6 0
EGP10A -EGP10D EGP10F-EGP10K
MCC
Figure 2 Forward Derating Curve 1.2 1.0 .8
25OC
150OC
Amps
.6 .4 .2
Resistive or Inductive Load 0.375"(9.5mm) Lead Length 0 50 75 100
O
125
150
175
C
.8
1.0
1.2
1.4
Average Forward Rectified Current - Amperes versus Ambient Temperature - OC
Volts Instantaneous Forward Current - Amperes versus Instantaneous Forward Voltage - Volts
Figure 3 Junction Capacitance 100 60 40 20 pF 10 6 4 2 1 .1 .2
EGP10A -EGP10D EGP10F - EGP10K
TJ =25OC
.4
1
2
4
10 Volts
20
40
100 200
400
1000
Junction Capacitance - pF versus Reverse Voltage - Volts
Revision: 3
www.mccsemi.com
2003/01/13
EGP10A thru EGP10K
Figure 4 Peak Forward Surge Current
MCC
60 50 40
30 Amps 20 10 0 1 2 4 6 8 10 20 Cycles Peak Forward Surge Current - Amperes versus Number Of Cycles At 60Hz - Cycles 40 60 80 100
Figure 5 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 10 +0.5A 0 25Vdc Pulse Generator Note 2 1 Notes: 1. Rise Time = 7ns max. Input impedance = 1 megohm, 22pF 2. Rise Time = 10ns max. Source impedance = 50 ohms 3. Resistors are non-inductive Oscilloscope Note 1 -0.25 trr
-1.0 1cm Set Time Base for 20/100ns/cm
Revision: 3
www.mccsemi.com
2003/01/13
Others parts begin by eg
EG-1 EG-2
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