|
|
Part: PH1090-550S
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
Description: 1030-1090 MHz,550 W, 10 MS Pulse,avionic Pulsed Power Transistor
Company: M/A-COM, Inc.
Datasheet: Download PH1090-550S datasheet File size : 241 kB
Request For quote: Find where to buy PH1090-550S
Datasheet text preview:
Avionics Pulsed Power Transistor 550 Watts, 1030-1090 MHz, 10µs Pulse, 1 % Duty
PH1090-550S
PH1090-550S
Avionics Pulsed Power Transistor - 550 Watts, 1030-1090 MHz, 10µs Pulse, 1% Duty
Features
· · · · · · · · · Designed for Short Pulse IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package
Outline Drawing
1
Description
M/A-COM's PH1090-550S is a silicon bipolar NPN transistor intended for use in L-band, 1.2 - 1.4 GHz avionics equipment such as IFF, mode-S and TCAS systems. Designed for common-base, class C broadband pulsed power applications, the PH1090-550S delivers 7.5 dB of gain at 550 watts of output power when operating with short pulse length (10µS), at 1 percent duty cycle. The transistor is housed in a 2-lead, rectangular metal-ceramic flange package, with internal input and output impedance matching networks. Diffused emitter ballast resistors and gold metalization assure ruggedness and long-term reliability.
Notes: (unless otherwise specified) 1. Tolerances are: inches ± .005" (millimeters ± 0.13mm)
Broadband Test Fixture Impedance
F (MHz) 1030 1090 Z IF () 4.0 - j3.5 3.6 - j2.7 Z OF () 1.4 - j1.6 1.1 - j1.9
Absolute Maximum Rating at 25°C
Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT Tstg Tj Rating 80 3.0 28 1800 -65 to +200 200 Units V V A W °C °C
TEST FIXTURE INPUT CIRCUIT
TEST FIXTURE OUTPUT CIRCUIT
50
ZIF
ZOF
50
Electrical Specifications at 25°C
Symbol
BVCES
ICES RTH(JC) Pin GP RL VSWR-T VSWR-S
Parameter Collector-Emitter Breakdown Collector-Emitter Leakage Thermal Resistance Input Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stability
Test Conditions IC=250mA VCE=45 V VCC=50 V, Pout=550 W, f=1090 MHz VCC=50 V, Pout=550 W, f=1090 MHz VCC=50 V, Pout=550 W, f=1090 MHz VCC=50 V, Pout=550 W, f=1090 MHz VCC=50 V, Pout=550 W, f=1090 MHz VCC=50 V, Pout=550 W, f=1090 MHz VCC=50 V, Pout=550 W, f=1090 MHz
M in 80 7. 5 55 9 -
Max 25 0.05 100 10:1 1.5:1
Units V mA ° C /W W dB % dB V2.00
M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www .macom.com
AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice.
Avionics Pulsed Power Transistor 550 Watts, 1030-1090 MHz, 10µs Pulse, 1 % Duty
PH1090-550S
Test Fixture Electrical Schematic
Top View
Circuit Dimensions
V2.00 M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www .macom.com
AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice.
Others parts begin by ph
PH-1 PH-2 PH-3 PH-4 PH-5
|
|
|
