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Part: AM42-0039
Category:
RF & Microwaves
-> Amplifiers
-> Power Amplifiers
-> LNAs
Description: 6.4-7.025 Ghz, GAAS Mmic Vsat Power Amplifier 2.0W
Company: M/A-COM, Inc.
Datasheet: Download AM42-0039 datasheet File size : 1661 kB
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Datasheet text preview:
2 Watt C-Band VSAT Power Amplifier 5.9 - 7.1 GHz
V1A
AM42-0039
AM42-0039
Features
· · · · · High Linear Gain: 33 dB Typical High Saturated Output Power: +33 dBm Typ. High Power Added Efficiency: 25% Typ. 50 Input / Output Broadband Matched Integrated Output Power Detector
Functional Schematic
VD D
GND
Description
M/A-COM's AM42-0039 is a three stage MMIC power amplifier in a bolt down ceramic package, allowing easy assembly. The AM42-0039 employs a fully matched chip with internally decoupled gate and drain bias networks. The AM42-0039 is designed to operate from a constant current drain supply or a constant voltage gate supply. By varying the bias conditions, the saturated output power performance of this device may be tailored for various applications. The AM42-0039 is ideally suited for use as an output stage or a driver amplifier in VSAT systems. The AM42-0039 includes internal supply line bypassing in the package, minimizing the number of external components required. M/A-COM's AM42-0039 is fabricated using a mature 0.5 micron MBE based GaAs MESFET process. The process features full passivation for increased performance and reliability. This product is 100% RF tested to ensure compliance to performance specifications.
VDD
GND
RFIN
GND
RFOUT VDET VGG
VGG
Pin Configuration
PIN No. PIN Name Description
1 2 3 4 5 6 7 8 9 10 Flange
VDD GND RFIN GND VGG VGG VDET RFOUT GND VDD
Drain Supply DC and RF Ground RF Input DC and RF Ground Gate Supply Gate Supply Output Power Detector RF Output DC and RF Ground Drain Supply
Absolute Maximum Ratings1,2
Parameter Input Power Operating Voltages Ids Channel Temperature Operating Temperature Storage Temperature Absolute Maximum +15 dBm VDD = +10 volts; VGG = -3 volts; VDD - VGG = 12 volts 1200 mA +150 °C -40 °C to +80 °C -65 °C to +150 °C
GND
DC and RF Ground
Ordering Information
Part Number AM42-0039 Package CR15 Ceramic Bolt Down Package
1. Exceeding any one or a combination of these limits may cause permanent damage. 2. Adequate heat sinking and grounding required on flange base. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.
1 North America: Tel. (800) 366-2266 Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax +44 (1908) 574 300
2 Watt Extended C-Band VSAT Power Amplifier, 5.9 - 7.1 GHz Electrical Specifications:
Parameter Linear Gain Input VSWR Output VSWR Output Power Output Power vs. Frequency Test Conditions Pin = -10 dBm Pin = -10 dBm Pin = -10 dBm Pin = +3 dBm, Ids = 900 mA Typ. Pin = +3 dBm, Ids = 900 mA Typ. (5.9 to 6.4 GHz) Pin = +3 dBm, Ids = 900 mA Typ. (6.4 to 7.1 GHz) Output Power vs. Temperature TA = -40°C to +85°C, Pin = +7 dBm Drain Bias Current Gate Bias Voltage Gate Bias Current Thermal Resistance (JC) Second Harmonic Third Harmonic Detector Voltage Pin = +3 dBm Pin = +3 dBm, Ids = 900 mA Typ. Pin = +3 dBm, Ids = 900 mA Typ. dB mA V mA °C/W dBc dBc V 800 -2.0 dB dBm dB 31.7 Units dB Min. 31
AM42-0039
V1A
Typ. 33 2.5:1 2.5:1 33.0 ±0.3 ±0.3 ±0.4 900 -1.2 10 7.0 -35 -45 4.0
Max. 35 3.0:1
±0.75 ±0.75
1000 -0.4 20
25 C Heat Sink
Pin = +3 dBm, Ids = 900 mA Typ. Pin = +3 dBm, Ids = 900 mA Typ. Pin = +3 dBm, Ids = 900 mA Typ.
o
Application Schematic 3,4,5
VDD 1 or 10 VDET
Handling Procedures
Please observe the following precautions to avoid damage to the AM42-0039:
7
1.0 µF
Static Sensitivity
RF In 3 AM42-0039 100 pF
0.01 µF
RF Out 8 100 pF
Gallium arsenide integrated circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Use proper ESD precautions when handling these devices.
Operating the AM42-0039
The AM42-0039 is static sensitive. Please handle with care. To operate the device, follow these steps. 1. 2. 3. 4. 5. Apply -2.5 Volts to VGG. Ramp VDD to +8V. Adjust VGG to set quiescent drain current . Apply RF. Power down sequence in reverse. Turn gate voltage off last.
1.0 µF
GND 2,4,9
VGG 5 or 6
3. Apply -2 volts to pin 5 or 6 (VGG), prior to applying +8 volts to pins 1 or 10 (VDD). Adjust VGG for typical drain current. 4. External DC blocking capacitors required on the RF ports. 5. For optimum IP3 performance, VDD bypass capacitors should be placed within 0.5 inches of the VDD leads. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. 2 North America: Tel. (800) 366-2266 Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax +44 (1908) 574 300
2 Watt Extended C-Band VSAT Power Amplifier, 5.9 - 7.1 GHz CR-15
-C.70 .530 .085 10X .050 MIN.
AM42-0039
V1A
10
9
8
7
6
-B.159
.328 ± .010 .318 ± .010 2X o .096 THRU
o.004 M A B C 1
.010 SQ. ORIENTATION TAB .115 ± .010 4X .050 4X .100 .33 .005 ± .002 .040 .090 MAX CERAMIC
2
3
4
5
10X .010 ± .003
4X .06 X 45° CHAMFER
-A-
.030
BASE PLATE
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.
3 North America: Tel. (800) 366-2266 Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax +44 (1908) 574 300
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